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    Mitsubishi Electric Corporation
Part No. CM20MD1-12H
OCR Text ...r capacitance total gate charge turn-on delay time turn-on rise time turn-off delay time turn-off fall time emitter-collector voltage reverse recovery time reverse recovery charge thermal resistance v v 1 0.5 2.8 2.0 1.5 0.4 120 300 200 3...
Description MITSUBISHI IGBT MODULES MEDIUM POWER SWITCHING USE FLAT-BASE TYPE, INSULATED TYPE

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    Mitsubishi Electric Corporation
Part No. CM15MD1-12H
OCR Text ...r capacitance total gate charge turn-on delay time turn-on rise time turn-off delay time turn-off fall time emitter-collector voltage reverse recovery time reverse recovery charge thermal resistance v v 1 0.5 2.8 1.5 1.2 0.3 120 300 200 3...
Description MITSUBISHI IGBT MODULES MEDIUM POWER SWITCHING USE FLAT-BASE TYPE, INSULATED TYPE

File Size 167.94K  /  5 Page

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    Mitsubishi Electric Corporation
Part No. CM15MD-24H
OCR Text ...r capacitance total gate charge turn-on delay time turn-on rise time turn-off delay time turn-off fall time emitter-collector voltage reverse recovery time reverse recovery charge thermal resistance v v 1 0.5 3.4 3.0 2.4 0.6 100 200 150 3...
Description MITSUBISHI IGBT MODULES MEDIUM POWER SWITCHING USE INSULATED TYPE

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    Mitsubishi Electric Corporation
Part No. CM10MD1-12H
OCR Text ...r capacitance total gate charge turn-on delay time turn-on rise time turn-off delay time turn-off fall time emitter-collector voltage reverse recovery time reverse recovery charge thermal resistance v v 1 0.5 2.8 1.0 0.9 0.2 120 300 200 3...
Description MITSUBISHI IGBT MODULES MEDIUM POWER SWITCHING USE FLAT-BASE TYPE, INSULATED TYPE

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    NXP Semiconductors N.V.
Part No. BUK9C10-65BIT BUK9C10-65BIT-15
OCR Text ... capacitance - 194 - pf t d(on) turn-on delay time v ds =30v; r l =1.5 ? ; v gs =5v; r g(ext) =10 ? -40-ns t r rise time - 113 - ns t d(off) turn-off delay time - 193 - ns t f fall time - 108 - ns l d internal drain inductance from pin to...
Description N-channel TrenchPLUS logic level FET

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    NXP Semiconductors N.V.
Philips
Part No. BUK753R1-40B BUK763R1-40B
OCR Text ...apacitance - 530 722 pf t d(on) turn-on delay time v dd = 30 v; r l = 1.2 w ; v gs =10v; r g =10 w -38-ns t r rise time - 82 - ns t d(off) turn-off delay time - 141 - ns t f fall time - 90 - ns l d internal drain inductance from drain lead ...
Description TRANSISTOR | MOSFET | N-CHANNEL | 40V V(BR)DSS | 75A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 40V的五(巴西)直| 75A条(丁)|63AB
TrenchMOS(TM) standard level FET

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    BTS550

Infineon Technologies AG
Part No. BTS550
OCR Text ...erse battery protection by self turn on of power mosfet features ? overload protection ? current limitation ? short circuit protection ? overtemperature protection ? overvoltage protection (including load dump) ? clamp of neg...
Description Smart Highside High Current Power Switch

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    ALTAIR05T-800 ALTAIR05T-800TR

STMicroelectronics
Part No. ALTAIR05T-800 ALTAIR05T-800TR
OCR Text ...3 v zcd/f b i ff starter source turn- o n lo gic +vi n +vout is ta rt -u p int ernal supply bus vref int er n. supp ly bus drain blanking time leb vcc iref 2. 5 v r s q comp - + - + + - s/h demag log ic gnd s r q iref r cdc protection & fe ...
Description Off-line all-primary-sensing switching regulator

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    SA53-IHZ

Cirrus Logic
Part No. SA53-IHZ
OCR Text ...h commands 2 phase lower fet to turn on 63 2t logic input logic high commands 2 phase upper fet to turn on 1 i2 analog output phase 2 current sense output 7 i lim /dis1 logic input/output as an output, logic high indicates cycle-by-cycle ...
Description Switching Amplifier

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