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    4CW100-000E

Communications & Power Industries, Inc.
Part No. 4CW100-000E
OCR Text late p late p late s creen p late drive output operation voltage c urrent voltage voltage c urrent p ower p ower (volts) ( a mps) (volts) (volts) ( a mps) (watts) (kilowatts) c rf amplifer 20,000 ...
Description RF amplifier

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    GS8170DW36C GS8170DW36C-200 GS8170DW36C-250 GS8170DW36C-333 GS8170DW72C-200 GS8170DW72C-250 GS8170DW72C-300 GS8170DW72C-

GSI Technology, Inc.
Part No. GS8170DW36C GS8170DW36C-200 GS8170DW36C-250 GS8170DW36C-333 GS8170DW72C-200 GS8170DW72C-250 GS8170DW72C-300 GS8170DW72C-333 GS8170DW36C-300I GS8170DW36C-333I GS8170DW36C-250I GS8170DW36C-200I GS8170DW72C-333I GS8170DW72C-200I
OCR Text late Write mode, Pipelined Read mode * JEDEC-standard SigmaRAMTM pinout and package * 1.8 V +150/-100 mV core power supply * 1.5 V or 1.8 V CMOS Interface * ZQ controlled user-selectable output drive strength * Dual Cycle Deselect * Burst R...
Description 18Mb B>1x1Dp CMOS I/O Double late Write SigmaRAM
18Mb x1Dp CMOS I/O Double late Write SigmaRAM 256K X 72 STANDARD SRAM, 2.25 ns, PBGA209

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Part No. MT18LD1672AG-6X
OCR Text ...en low prior to cas# falling. a late write or read-modify-write occurs when we# falls after cas# is taken low. during early write cycles, the data-outputs (q) will remain high-z regardless of the state of oe#. during late write or read-modi...
Description 16M X 72 EDO DRAM MODULE, 60 ns, DMA168

File Size 621.95K  /  27 Page

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    GS8170DW36AC GS8170DW36AC-250 GS8170DW36AC-350 GS8170DW72AC-250 GS8170DW36AC-333 GS8170DW36AC-300 GS8170DW36AGC-350 GS81

GSI Technology, Inc.
Part No. GS8170DW36AC GS8170DW36AC-250 GS8170DW36AC-350 GS8170DW72AC-250 GS8170DW36AC-333 GS8170DW36AC-300 GS8170DW36AGC-350 GS8170DW72AGC-350 GS8170DW36AGC-350I GS8170DW72AGC-350I GS8170DW36AC-350I GS8170DW72AC-350I GS8170DW72AGC-333 GS8170DW36AGC-333I GS8170DW36AC-333I GS8170DW72AC-333I GS8170DW36AC-250I GS8170DW36AGC-250I GS8170DW72AC-250I GS8170DW36AGC-300I GS8170DW72AC-300I GS8170DW36AC-300I GS8170DW72AGC-300
OCR Text late Write mode, Pipelined Read mode * JEDEC-standard SigmaRAMTM pinout and package * 1.8 V +150/-100 mV core power supply * 1.8 V CMOS Interface * ZQ controlled user-selectable output drive strength * Dual Cycle Deselect * Burst Read and W...
Description 18Mb B>1x1Dp CMOS I/O Double late Write SigmaRAM
18Mb x1Dp CMOS I/O Double late Write SigmaRAM 512K X 36 STANDARD SRAM, 2.1 ns, PBGA209
18Mb x1Dp CMOS I/O Double late Write SigmaRAM 512K X 36 STANDARD SRAM, 1.8 ns, PBGA209
18Mb x1Dp CMOS I/O Double late Write SigmaRAM 35.7x1Dp的CMOS的I / O双晚SigmaRAM
18Mb x1Dp CMOS I/O Double late Write SigmaRAM 256K X 72 STANDARD SRAM, 1.8 ns, PBGA209

File Size 761.08K  /  32 Page

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    MT16LD3264A MT16LD864A

Micron Technology
Part No. MT16LD3264A MT16LD864A
OCR Text ...en low prior to cas# falling. a late write or read-modify-write oc- curs when we# falls after cas# was taken low. during early write cycles, the data-outputs (q) will remain high-z regardless of the state of oe#. during late write or read-m...
Description (MT16LDxx64A) DRAM MODULE

File Size 564.85K  /  27 Page

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    AMIC Technology Corporation
Part No. A65H73361P-7 A65H73361P-6 A65H83181P-6 A65H83181P-7 A65H73361SERIES A65H83181SERIES A65H73361P-5 A65H83181P-5 A65H73361 A65H83181
OCR Text late write synchronous preliminary fast sram with pipelined data output preliminary ( february , 1999, version 2.0) amic technology, inc. document title 128k x 36 & 256k x 18 late write synchronous fast sram with pipelined data...
Description    128K x 36 & 256K x 18 late Write Synchronous Fast SRAM with Pipelined Data Output

File Size 534.74K  /  21 Page

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    GS8170LW36AC

GSI Technology, Inc.
Part No. GS8170LW36AC
OCR Text late write sigmaram? 250 mhz?350 mhz 1.8 v v dd 1.8 v i/o 209-bump bga commercial temp industrial temp rev: 1.04 4/2005 1/32 ? 2003, gsi technology specifications cited are subject to change without notice . for latest documentation see ...
Description 18Mb B>1x1Lp CMOS I/O late Write SigmaRAM
18Mb x1Lp CMOS I/O late Write SigmaRAM 35.7x1Lp的CMOS的I / O后写SigmaRAM

File Size 760.16K  /  32 Page

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    T2316160A T2316160A-45 T2316160A-60

Taiwan Memory Technolog...
TMT[Taiwan Memory Technology]
TM Technology, Inc.
Part No. T2316160A T2316160A-45 T2316160A-60
OCR Text ...rictive operating parameters in late WRITE and READ-MODIFY-WRITE cycles only. If tWCS tWCS(min), the cycle is an EARLY WRITE cycle and the data output will remain an open circuit throughout the entire cycle. If tRWD tRWD(min), tAWD tAWD(...
Description 1024K x 16 DYNAMIC RAM FAST PAGE MODE
SPST, Low Profile DIP Switches

File Size 136.29K  /  13 Page

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    T2316162A T2316162A-45 T2316162A-50 T2316162A-60

Taiwan Memory Technolog...
TMT[Taiwan Memory Technology]
TM Technology, Inc.
Part No. T2316162A T2316162A-45 T2316162A-50 T2316162A-60
OCR Text ...E cycles and WE leading edge in late WRITE or READMODIFY-WRITE cycles. 13. During a READ cycle, if OE is low then taken HIGH before CAS goes high, I/O goes open, if OE is tied permanently low, a late WRITE or READ-MODIFY-WRITE operation is ...
Description 1024K x 16 DYNAMIC RAM EDO PAGE MODE
SPST, Low Profile DIP Switches

File Size 135.62K  /  13 Page

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    T2316405A T2316405A-10 T2316405A-50 T2316405A-60 T2316405A-70 T2316407A T2316407A-10 T2316407A-50 T2316407A-60 T2316407A

Taiwan Memory Technolog...
TMT[Taiwan Memory Technology]
TM Technology, Inc.
Part No. T2316405A T2316405A-10 T2316405A-50 T2316405A-60 T2316405A-70 T2316407A T2316407A-10 T2316407A-50 T2316407A-60 T2316407A-70
OCR Text ...-Z) until the next CAS cycle. A late Write or Read-Modify-Write occurs. When WE falls after CAS was taken LOW (late Write cycle). OE must be taken HIGH to disable the data-outputs prior to applying input data. The four data inputs and four ...
Description 4M x 4 DYNAMIC RAM EDO PAGE MODE
SPST, Low Profile DIP Switches

File Size 134.00K  /  14 Page

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