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![1N5988 1N5993 1N5987 1N5989 1N5997 1N5996 1N6029 1N5990 1N6002 1N6003 1N6027 1N6031 1N6022 1N5985 1N5991 1N5992 1N6004 1](Maker_logo/microsemi_corporation.GIF)
MICROSEMI CORP-LAWRENCE MICROSEMI CORP-SCOTTSDALE MICROSEMI[Microsemi Corporation] Microsemi, Corp.
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Part No. |
1N5988 1N5993 1N5987 1N5989 1N5997 1N5996 1N6029 1N5990 1N6002 1N6003 1N6027 1N6031 1N6022 1N5985 1N5991 1N5992 1N6004 1N6028 1N5998 1N5999 1N6019 1N6024 1N6026 1N5986 1N5994 1N5995 1N6001 1N6005 1N6006 1N6007 1N6008 1N6009 1N6010 1N6011 1N6012 1N6013 1N6014 1N6015 1N6016 1N6017 1N6018 1N6020 1N6021 1N6023 1N6025 1N6030 1N6018C 1N6003C 1N6011C 1N5998C 1N6030B 1N6012C 1N6014C 1N6004C 1N6024D 1N5996C 1N6017C
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Description |
From old datasheet system Axial-Leaded 500 mW Zener Diodes SILICON 500 mW ZENER DIODES 3.3V Input to Regulated 5V Output Charge Pumps Static Protection Wrist Grounder; Body Material:Fabric RoHS Compliant: NA Zener Voltage Regulator Diode 8.2 V, 0.48 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-204AH Zener Voltage Regulator Diode 180 V, 0.48 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-204AH Zener Voltage Regulator Diode 33 V, 0.48 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-204AH Zener Voltage Regulator Diode 39 V, 0.48 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-204AH Zener Voltage Regulator Diode 15 V, 0.48 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-204AH Zener Voltage Regulator Diode 100 V, 0.48 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-204AH insulating Tape; Peak Reflow Compatible (260 C):No 27 V, 0.48 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-204AH
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File Size |
110.10K /
3 Page |
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![1N5988A 1N5993A 1N5987A 1N5989A 1N5997A 1N5996A 1N6029A 1N5990A 1N6002A 1N6003A 1N6027A 1N6031A 1N6021A 1N6022A 1N5985A](Maker_logo/microsemi_corporation.GIF)
MICROSEMI CORP-SCOTTSDALE Microsemi, Corp. MICROSEMI[Microsemi Corporation]
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Part No. |
1N5988A 1N5993A 1N5987A 1N5989A 1N5997A 1N5996A 1N6029A 1N5990A 1N6002A 1N6003A 1N6027A 1N6031A 1N6021A 1N6022A 1N5985A 1N5991A 1N5992A 1N6004A 1N6000A 1N6000 1N6028A 1N5998A 1N5999A 1N6019A 1N5994A 1N6024A 1N6025A 1N5986A 1N6006A 1N5985 1N5986 1N5987 1N5988 1N5989 1N5990 1N5991 1N5992 1N5993 1N5994 1N5995 1N5995A 1N5996 1N5997 1N5998 1N5999 1N6001 1N6001A 1N6002 1N6003 1N6004 1N6005 1N6005A 1N6006 1N6007 1N6007A 1N6008 1N6008A 1N6009 1N6009A 1N6010 1N6010A 1N6011 1N6011A 1N6012 1N6012A 1N6013 1N6013A 1N6014 1N6014A 1N6015 1N6016 1N6016A 1N6017 1N6017A 1N6018 1N6018A 1N6019 1N6020 1N6020A 1N6021 1N6022 1N6023 1N6023A 1N6024 1N6025 1N6026 1N6026A 1N6027 1N6028 1N6029 1N6030 1N6030A 1N6031 1N6002D 1N6002C 1N6002B 1N6000D 1N6001B 1N5990B 1N5990D 1N5990C 1N6003C 1N5991D 1N6026B 1N6026C 1N6026D 1N6025C 1N6027C 1N6024B 1N6024C 1N6024D 1N5993B 1N5993C 1N5993D 1N6028D 1N5989D 1N6016B 1N5999B 1N6023D 1N6023B 1N6012B 1N5987C 1N5985C 1N5985D 1N5986B 1N5987B 1N5987D 1N5992B 1N5992D 1N6006C 1N5997C 1N6003B 1N6029B 1N6015A 1N5991C 1N5994D 1N5988D 1N5988C 1N5989C 1N5994C 1N5996C 1N6031B 1N6027B 1N5995C 1N6029C 1N6029D 1N6017C 1N6021B 1N6007C 1N6031D 1N6013D 1N6020D 1N6028B 1N6028C 1N6027D 1N6021C
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Description |
Static Protection Wrist Grounder; Body Material:Fabric RoHS Compliant: NA MASTIC PAD 27 V, 0.48 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-204AH MSTBP 2,5/21-ST-5,08 91 V, 0.48 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-204AH Sealing Tape; Tape Backing Material:Rubber; Width:0.75"; Roll Length:15ft; Color:Black RoHS Compliant: Yes 120 V, 0.48 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-204AH IC Socket; Leaded Process Compatible:Yes; No. of Contacts:14; Peak Reflow Compatible (260 C):No; Pitch Spacing:0.15"; Terminal Type:PC Board RoHS Compliant: Yes 12 V, 0.48 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-204AH insulating Tape; Peak Reflow Compatible (260 C):No RoHS Compliant: Yes Axial-Leaded 500 mW Zener Diodes Zener Voltage Regulator Diode
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File Size |
213.55K /
3 Page |
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Download Datasheet
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Rohm CO.,LTD. Electronic Theatre Controls, Inc. Microsemi, Corp.
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Part No. |
BD52XXG BD5247 BD5257 BD5256 BD5344 BD5241 BD5243 BD5328 BD53XXFVE BD5324 BD5350 BD5327 BD5338 BD5238
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Description |
Static Monitor Jack; Features:Allows an operator to disconnect a ground cord from the wrist band and leave the workstation without deactivating Polarizing post; For Use With:N2500 series, 4-wall headers; Body Material:Glass-filled Polyester; Color:Beige; Features:Hi-temperature plastic RoHS Polarizing post; For Use With:N2500 series, 4-wall headers; Body Material:Glass-filled Polyester; Color:Black; Features:Low-temperature plastic RoHS Color Coded Flat Cable, 3302/25 28 AWG, .050 (1.27) ECONOLINE: RI - Custom Solutions Available- 1kVDC Isolation- No Extern. Components Required- UL94V-0 Package Material- No Heatsink Required- Efficiency to 87% Color Coded Flat Cable, 3302/10 28 AWG, .050 (1.27) 电压检测器IC VOLTAGE DETECTOR IC 电压检测器IC insulating Tape; Tape Backing Material:PVC; Width:0.75"; Roll Length:20ft; Adhesive Material:Rubber RoHS Compliant: Yes 电压检测器IC Color Coded Flat Cable, 3302/34 28 AWG, .050 (1.27) 电压检测器IC Color Coded Flat Cable, 3302/09 28 AWG, .050 (1.27) 电压检测器IC Color Coded Flat Cable, 3302/18 28 AWG, .050 (1.27) 电压检测器IC
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File Size |
374.79K /
4 Page |
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it Online |
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CREE POWER
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Part No. |
W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L000 W4NXD8D-0000 W4NXD8C-S000 W4NXD8D-S000 W4NXD8G-0000 W6NRE0X-0000 W6NRD0X-0000 W6PXD3O-0000 W6NXD3L-0000 W6NXD0K-0000 W6NXD3K-0000
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Description |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
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File Size |
273.34K /
17 Page |
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it Online |
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Price and Availability
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