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KODENSHI KOREA
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Part No. |
KK4006B
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OCR Text |
... to guard against damage due to high static voltages or electric fields. However, precautions must be taken to avoid applications of any vol...Freguency Maximum Clock Input Rise or Fall Time
100 50 40 150 80 60 200 90 60
200 100 80 300 1... |
Description |
CMOS 18-Stage Static Shift Register
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File Size |
259.74K /
7 Page |
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it Online |
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SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
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Part No. |
K7I323682M K7I321882M K7M161825A-QCI65
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OCR Text |
...conditions. 4. Reserved pin for high density name change from NC to Vss/SA 5. Delete AC test condition about Clock Input timing Reference Le...freguency scaling. * I/O Supply Voltage 1.5V+0.1V/-0.1V for 1.5V I/O, 1.8V+0.1V/-0.1V for 1.8V I/O. ... |
Description |
1Mx36 & 2Mx18 DDRII CIO b2 SRAM 512Kx36 & 1Mx18 Pipelined NtRAM
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File Size |
375.01K /
17 Page |
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it Online |
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SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
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Part No. |
K7J163682B K7J161882B
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OCR Text |
...e Control Pin, Read active when high Synchronous Load Pin, bus Cycle sequence is to be defined when low Block Write Control Pin,active when low Input Reference Voltage Output Driver Impedance Control Input Power Supply ( 1.8 V ) Output Powe... |
Description |
512Kx36 & 1Mx18 DDR II SIO b2 SRAM
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File Size |
371.63K /
17 Page |
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it Online |
Download Datasheet
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Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD.
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Part No. |
K7J323682M K7J321882M
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OCR Text |
...conditions. 3. Reserved pin for high density name change from NC to Vss/SA 4. Delete AC test condition about Clock Input timing Reference Le...freguency scaling. * I/O Supply Voltage 1.5V+0.1V/-0.1V for 1.5V I/O, 1.8V+0.1V/ -0.1V for 1.8V I/O.... |
Description |
1Mx36 & 2Mx18 DDR II SIO b2 SRAM
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File Size |
304.26K /
17 Page |
View
it Online |
Download Datasheet
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For
high-freguency Found Datasheets File :: 71 Search Time::2.032ms Page :: | 1 | 2 | <3> | 4 | 5 | 6 | 7 | 8 | |
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