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NXP Semiconductors N.V.
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Part No. |
PSMN4R1-30YLC
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OCR Text |
... 175 c static characteristics r dson drain-source on-state resistance v gs =4.5v; i d =20a; t j =25c; see figure 12 - 4.75 5.7 m ? v gs =10v; i d =20a; t j =25c; see figure 12 - 3.65 4.35 m ?
psmn4r1-30ylc all information provided in... |
Description |
N-channel 30 V 4.35m logic level MOSFET in LFPAK using NextPower technology 90 A, 30 V, 0.0057 ohm, N-CHANNEL, Si, POWER, MOSFET, MO-235
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File Size |
305.41K /
15 Page |
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