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cool-power Datasheet PDF File

For cool-power Found Datasheets File :: 2518 Search Time::1.172ms
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				MICREL INC MICREL[Micrel Semiconductor] Micrel Semiconductor, Inc.
Part No.	MIC4421 MIC4421BM MIC4421BN MIC4421CM MIC4421CN MIC4421CT MIC4422BM MIC4422BN MIC4422CM MIC4422CN MIC4422CT
OCR Text	...very low crossover current, run cool, use little power, and are easy to drive. Features * BiCMOS/DMOS Construction * Latch-Up Proof: Fully Isolated Process is Inherently Immune to Any Latch-up. * Input Will Withstand Negative Swing of U...
Description	9A-Peak Low-Side MOSFET Driver Bipolar/CMOS/DMOS Process 9 A BUF OR INV BASED MOSFET DRIVER, PDSO8 FPGA - 100000 SYSTEM GATE 2.5 VOLT - NOT RECOMMENDED for NEW DESIGN 9 A BUF OR INV BASED MOSFET DRIVER, PDIP8 FPGA - 100000 SYSTEM GATE 2.5 VOLT - NOT RECOMMENDED for NEW DESIGN 9 A BUF OR INV BASED MOSFET DRIVER, PSFM5 9A-Peak Low-Side MOSFET Driver Bipolar/CMOS/DMOS Process 9 A BUF OR INV BASED MOSFET DRIVER, PDIP8
File Size	109.03K / 10 Page	View it Online	Download Datasheet

				MOTOROLA[Motorola, Inc]
Part No.	MMBD6050LT1 ON2082
OCR Text	...the device should be allowed to cool naturally for at least three minutes. Gradual cooling should be used as the use of forced cooling will ...power dissipation of the device which in this case is 225 milliwatts. PD = 150C - 25C 556C/W = 225 m...
Description	From old datasheet system Switching Diode
File Size	76.02K / 4 Page	View it Online	Download Datasheet

				MOTOROLA[Motorola, Inc] ONSEMI[ON Semiconductor]
Part No.	MMBD770T1 MMBD110T1 MMBD330T1 MMDD110T1 ON2076 MMBD110T1-D
OCR Text	...the device should be allowed to cool naturally for at least three minutes. Gradual cooling should be used as the use of forced cooling will ...power dissipation of the device which in this case is 150 milliwatts. PD = 150C - 25C 833C/W = 150 m...
Description	From old datasheet system SCHOTTKY BARRLER DLODES Schottky Barrier Diodes
File Size	153.70K / 8 Page	View it Online	Download Datasheet

				MOTOROLA[Motorola, Inc]
Part No.	MMBF0201 MMBF0201N
OCR Text	...the device should be allowed to cool naturally for at least three minutes. Gradual cooling should be used as the use of forced cooling will ...power dissipation of the device which in this case is 225 milliwatts. PD = 150C - 25C 556C/W = 225 m...
Description	N-CHANNEL ENHANCEMENT-MODE TMOS MOSFET
File Size	178.83K / 6 Page	View it Online	Download Datasheet

				MOTOROLA[Motorola, Inc]
Part No.	MMBF0202PLT1 MMBF0202PL ON2091
OCR Text	...the device should be allowed to cool naturally for at least three minutes. Gradual cooling should be used as the use of forced cooling will ...power dissipation of the device which in this case is 225 milliwatts. PD = 150C - 25C 556C/W = 225 m...
Description	From old datasheet system P-CHANNEL ENHANCEMENT-MODE TMOS MOSFET
File Size	190.27K / 6 Page	View it Online	Download Datasheet

				MOTOROLA[Motorola, Inc] ONSEMI[ON Semiconductor]
Part No.	MMBF4391LT1 MMBF4392L MMBF4392LT1 MMBF4393LT1 ON2098
OCR Text	...the device should be allowed to cool naturally for at least three minutes. Gradual cooling should be used as the use of forced cooling will ...power dissipation of the device which in this case is 225 milliwatts. PD = 150C - 25C 556C/W = 225 m...
Description	From old datasheet system CASE 3188, STYLE 10 SOT3 (TO?36AB JFET Switching Transistors
File Size	137.40K / 6 Page	View it Online	Download Datasheet

				MOTOROLA[Motorola, Inc]
Part No.	MMBTH10LT1
OCR Text	...the device should be allowed to cool naturally for at least three minutes. Gradual cooling should be used as the use of forced cooling will ...power dissipation of the device which in this case is 225 milliwatts. PD = 150C - 25C 556C/W = 225 m...
Description	VHF/UHF Transistor
File Size	86.76K / 6 Page	View it Online	Download Datasheet

				Motorola Mobility Holdings, Inc. MOTOROLA[Motorola, Inc]
Part No.	MMQA5V6T1 MMQA20VT1 ON2242
OCR Text	...the device should be allowed to cool naturally for at least three minutes. Gradual cooling should be used since the use of forced cooling will increase the temperature gradient and will result in latent failure due to mechanical stress. ...
Description	SC-59 QUAD TRANSIENT VOLTAGE SUPPRESSOR 5.6 VOLTS 24 W, UNIDIRECTIONAL, 4 ELEMENT, SILICON, TVS DIODE From old datasheet system
File Size	136.87K / 8 Page	View it Online	Download Datasheet

				Motorola Mobility Holdings, Inc. Motorola, Inc. MOTOROLA[Motorola Inc] ONSEMI[ON Semiconductor]
Part No.	MSB709RT1 MSB709-RT1 ON2370
OCR Text	...he device should be allowed to cool naturally for at least three minutes. Gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress. * Mechanica...
Description	PNP General Purpose Amplifier Transistor Surface Mount 100 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR From old datasheet system
File Size	111.84K / 4 Page	View it Online	Download Datasheet

				INFINEON[Infineon Technologies AG]
Part No.	SPA07N60C2 SPB07N60C2 SPP07N60C2
OCR Text	Cool MOSTM Power Transistor Feature * New revolutionary high voltage technology * Ultra low gate charge * Periodic avalanche rated * Extreme dv/dt rated * Ultra low effective capacitances P-TO220-3-31 Product Summary VDS @ Tjmax 650 R ...
Description	Cool MOSPower Transistor 酷马鞍山⑩功率晶体管 Cool MOS⑩ Power Transistor Cool MOS Power Transistor for lowest Conduction Losses & fastest Switching
File Size	158.37K / 14 Page	View it Online	Download Datasheet

For cool-power Found Datasheets File :: 2518 Search Time::1.172ms
Page :: | 1 | 2 | <3> | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |