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alumina Datasheet PDF File

For alumina Found Datasheets File :: 4582 Search Time::1.156ms
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				Hitachi Semiconductor
Part No.	2SJ575
OCR Text	... duty cycle 1% 2. Value on the alumina ceramic board (12.5x20x0.7mm) Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltege drain curr...
Description	Silicon P Channel MOS FET High Speed Switching
File Size	38.55K / 8 Page	View it Online	Download Datasheet

				http:// HITACHI[Hitachi Semiconductor]
Part No.	2SJ576
OCR Text	... duty cycle 1% 2. Value on the alumina ceramic board (12.5x20x0.7 mm) Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltege drain cur...
Description	Silicon P Channel MOS FET High Speed Switching
File Size	26.18K / 5 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SJ586
OCR Text	... duty cycle 1% 2. Value on the alumina ceramic board (12.5x 20 x0.7 mm) Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltege drain c...
Description	Silicon P Channel MOS FET High Speed Switching
File Size	40.34K / 8 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SJ587
OCR Text	... duty cycle 1% 2. Value on the alumina ceramic board (12.5x 20 x0.7 mm) Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltege drain c...
Description	Silicon P Channel MOS FET High Speed Switching
File Size	38.71K / 8 Page	View it Online	Download Datasheet

				SEMTECH ELECTRONICS LTD.
Part No.	BAS19 BAS21 BAS20
OCR Text	...mbient Total Device Dissipation alumina Substrate TA=25 OC Derate above 25 OC Thermal Resistance Junction to Ambient Junction and Storage Temperature Range C/W PD RJA TJ ,TS Symbol VF VF BAS19 BAS20 BAS21 BAS19 BAS20 BAS21 BAS19 BAS20...
Description	HIGH VOLTAGE SWITCHING DIODES
File Size	127.07K / 1 Page	View it Online	Download Datasheet

				Zowie Technology Corporation
Part No.	MMBD7000G
OCR Text	...mbient Total Device Dissipation alumina Substrate, o Derate above 25 C Thermal Resistance, Junction to Ambient Junction and Storage Temperature (2) C/W TA=25 C o PD R JA TJ,TSTG mW mW / oC o C/W o C ELECTRICAL CHARACT...
Description	Dual Switching Diode Lead free product
File Size	37.40K / 2 Page	View it Online	Download Datasheet

				Weitron Technology
Part No.	MMBZ20VA MMBZ27VA
OCR Text	...ient Total Power Dissipation on alumina Substrate (3)@ TA Derate above 25 C Thermal Resistance Junction-to-Ambient Junction and Storage Temperature Range Lead Solder Temperature-Maximum(10 Second Duration) =25 C Symbol Value 24 40 225 1.8 5...
Description	SMALL SIGNAL ZENER DIODES 300m WATTS 3-26 VOLTS
File Size	133.49K / 5 Page	View it Online	Download Datasheet

				Raytheon
Part No.	RMWM38001
OCR Text	...put rf input /output 5mil thick alumina 50-ohm 5 mil thick alumina 50-ohm 2 mil gap l< 0.015 (6 places) die-attach 80au/20sn if input /output 5 mil thick alumina 50-ohm figure 3 recommended assembly diagram 1 caution: this is an esd sensi...
Description	38 GHz mixer MMIC
File Size	306.16K / 5 Page	View it Online	Download Datasheet

				Hittite Microwave Corporation
Part No.	HMC598
OCR Text	... lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so ...
Description	GaAs MMIC x2 ACTIVE FREQUENCY MULTIPLIER, 22 - 46 GHz OUTPUT
File Size	230.47K / 6 Page	View it Online	Download Datasheet

				SIEMENS AG SIEMENS[Siemens Semiconductor Group]
Part No.	BAS125-04 BAS125-05 BAS125-06 Q62702-D1316 BAS125 Q62702-D1323 Q62702-D1321 Q62702-D1322
OCR Text	...ge Outlines. Package mounted on alumina 15 mm x 16.7 mm x 0.7 mm. 450 mW per package. Semiconductor Group 2 BAS 125 ... Electrical Characteristics per Diode at TA = 25 C, unless otherwise specified. Parameter Reverse current VR ...
Description	Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping applications) 2 ELEMENT, SILICON, SIGNAL DIODE Circular Connector; Series:MS3106R; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No Silicon Schottky Diodes (For low-loss fast-recovery meter protection bias isolation and clamping applications) From old datasheet system
File Size	104.64K / 5 Page	View it Online	Download Datasheet

For alumina Found Datasheets File :: 4582 Search Time::1.156ms
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