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  900v Datasheet PDF File

For 900v Found Datasheets File :: 1609    Search Time::1.594ms    
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    APTC90DDA12CT1G

Microsemi Corporation
Part No. APTC90DDA12CT1G
OCR Text 900v RDSon = 120m max @ Tj = 25C ID = 30A @ Tc = 25C Application * AC and DC motor control * Switched Mode Power Supplies * Power Factor Correction Features * * Ultra low RDSon Low Miller capacitance Ultra low gate charge Avalanche energy ...
Description Dual boost chopper Super Junction MOSFET SiC chopper diode

File Size 218.72K  /  6 Page

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    APTC90DDA12T1G

Microsemi Corporation
Part No. APTC90DDA12T1G
OCR Text 900v RDSon = 120m max @ Tj = 25C ID = 30A @ Tc = 25C Application * AC and DC motor control * Switched Mode Power Supplies * Power Factor Correction Features * - Ultra low RDSon - Low Miller capacitance - Ultra low gate charge - Avalanche e...
Description Dual boost chopper Super Junction MOSFET Power Module

File Size 222.00K  /  6 Page

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    FZ800R17KF6CB2

eupec GmbH
Part No. FZ800R17KF6CB2
OCR Text ...nductive load) IC = 800A, VCE = 900v VGE = 15V, RG = 1,8, Tvj = 25C VGE = 15V, RG = 1,8, Tvj = 125C Anstiegszeit (induktive Last) rise time (inductive load) IC = 800A, VCE = 900v VGE = 15V, RG = 1,8, Tvj = 25C VGE = 15V, RG = 1,8, Tvj = 125...
Description IGBT-Modules

File Size 114.93K  /  9 Page

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    Infineon Technologies
Part No. H30T90
OCR Text ...,max marking package ihw30n90t 900v 30a 1.5v 175 c h30t90 pg-to-247-3 maximum ratings parameter symbol value unit collector-emitter voltage v ce 900 v dc collector current t c = 25 c t c = 100 c i c 60 30 pulsed collec...
Description IGBT

File Size 285.54K  /  12 Page

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    STP5NC90Z STP5NC90ZFP STB5NC90Z STB5NC90Z-1

意法半导
STMICROELECTRONICS[STMicroelectronics]
Part No. STP5NC90Z STP5NC90ZFP STB5NC90Z STB5NC90Z-1
OCR Text 900v - 2.1 - 4.6A TO-220/FP/DPAK/IPAK Zener-Protected PowerMESHTMIII MOSFET TYPE STP5NC90Z/FP STB5NC90Z/-1 s s VDSS 900v 900v RDS(on) < 2.5 < 2.5 ID 4.6 A 4.6 A 1 3 s s s TYPICAL RDS(on) = 2.1 EXTREMELY HIGH dv/dt AND CAPA...
Description N-CHANNEL 900v - 2.1ohm - 4.6A TO-220/FP/D?PAK/I?PAK Zener-Protected PowerMESH⑩III MOSFET
N-CHANNEL 900v - 2.1ohm - 4.6A TO-220/FP/DPAK/IPAK Zener-Protected PowerMESHIII MOSFET
N-CHANNEL 900v - 2.1ohm - 4.6A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH?III MOSFET

File Size 514.47K  /  13 Page

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    FZ1600R17KF6C

eupec GmbH
Part No. FZ1600R17KF6C
OCR Text ...uctive load) IC = 1600A, V CE = 900v VGE = 15V, RG = 0,9, Tvj = 25C VGE = 15V, RG = 0,9, Tvj = 125C Anstiegszeit (induktive Last) rise time (inductive load) IC = 1600A, V CE = 900v VGE = 15V, RG = 0,9, Tvj = 25C VGE = 15V, RG = 0,9, Tvj = 1...
Description IGBT-Modules

File Size 149.20K  /  9 Page

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    FF200R17KE3

eupec GmbH
Part No. FF200R17KE3
OCR Text ...inductive load) IC =200A, VCE = 900v VGE = 15V, RG = 6,8W, Tvj = 25C VGE = 15V, RG = 6,8W, Tvj = 125C Anstiegszeit (induktive Last) rise time (inductive load) IC = 200A, VCE = 900v VGE = 15V, RG = 6,8W, Tvj = 25C VGE = 15V, RG = 6,8W, Tvj =...
Description IGBT-Modules

File Size 250.53K  /  9 Page

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    APT46GA90JD40

Microsemi Corporation
Microsemi, Corp.
Part No. APT46GA90JD40
OCR Text 900v High Speed PT IGBT (R) E E POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved 7 22 C G through leading technology silicon design and lifetime control processes. A reduced Eoff TSO VCE(ON) tradeof...
Description High Speed PT IGBT
Insulated Gate Bipolar Transistor - Power MOS 8; Package: ISOTOP&#174;; BV(CES) (V): 900; VCE(sat) (V): 2.5; IC (A): 46; 87 A, 900 V, N-CHANNEL IGBT

File Size 235.94K  /  9 Page

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    APTGT100DA170T

Advanced Power Technology
Part No. APTGT100DA170T
OCR Text ...witching (25C) VGE = 15V VBus = 900v IC = 100A R G = 4.7 Inductive Switching (125C) VGE = 15V VBus = 900v IC = 100A R G = 4.7 Min Typ 9 0.36 0.3 370 40 650 180 400 50 800 300 32 31 Max Unit nF ns ns mJ Chopper diod...
Description Boost chopper Trench Field Stop IGBT Power Module

File Size 275.98K  /  5 Page

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    APTGT400U170D4G

Microsemi Corporation
Part No. APTGT400U170D4G
OCR Text ...V f = 1MHz VGE=15V, IC=400A VCE=900v Inductive Switching (25C) VGE = 15V VBus = 900v IC = 400A RG = 3.6 Inductive Switching (125C) VGE = 15V VBus = 900v IC = 400A RG = 3.6 VGE = 15V Tj = 125C VBus = 900v IC = 400A Tj = 125C RG = 3.6 VGE 15V...
Description Single switch Trench Field Stop IGBT Power Module

File Size 196.04K  /  5 Page

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For 900v Found Datasheets File :: 1609    Search Time::1.594ms    
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