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Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
Freescale (Motorola)
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| Part No. |
MW5IC2030MBR1 MW5IC2030GMBR1
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| OCR Text |
... Drain Efficiency -- 20% ACPR @ 885 kHz Offset -- - 49 dBc @ 30 kHz Channel Bandwidth Driver Application Typical CDMA Performance: VDD = 27 Volts, IDQ1 = 200 mA, IDQ2 = 550 mA, Pout = 1 Watt Avg., Full Frequency Band, IS - 95 CDMA (Pilot, S... |
| Description |
RF LDMOS Wideband Integrated Power Amplifiers 1930 MHz - 1990 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER
1930–1990 MHz, 30 W, 26 V GSM/GSM EDGE, W–CDMA, PHS RF LDMOS Wideband Integrated Power Amplifier
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| File Size |
621.66K /
12 Page |
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FREESCALE[Freescale Semiconductor, Inc]
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| Part No. |
MRF6S19140HSR3 MRF6S19140HR3 MRF6S19140HR3_07
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| OCR Text |
...88 MHz Channel Bandwidth ACPR @ 885 kHz Offset -- - 51 dBc in 30 kHz Channel Bandwidth * Capable of Handling 10:1 VSWR, @ 28 Vdc, 1960 MHz, 140 Watts CW Output Power Features * Characterized with Series Equivalent Large - Signal Impedance P... |
| Description |
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
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| File Size |
400.35K /
11 Page |
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Freescale (Motorola)
FREESCALE[Freescale Semiconductor, Inc]
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| Part No. |
MRF6S19140HSR3 MRF6S19140HR3
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| OCR Text |
...88 MHz Channel Bandwidth ACPR @ 885 kHz Offset -- - 51 dBc @ 30 kHz Channel Bandwidth * Capable of Handling 10:1 VSWR, @ 28 Vdc, 1960 MHz, 140 Watts CW Output Power * Characterized with Series Equivalent Large - Signal Impedance Parameters ... |
| Description |
N-Channel Enhancement-Mode Lateral MOSFETs
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| File Size |
394.12K /
12 Page |
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it Online |
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Freescale Semiconductor...
FREESCALE[Freescale Semiconductor, Inc]
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| Part No. |
MRF6S19060NR1 MRF6S19060NBR1 MRF6S19060N MRF6S19060NR108
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| OCR Text |
... in 1.2288 MHz Bandwidth ACPR @ 885 kHz Offset -- - 51 dBc in 30 kHz Bandwidth * Capable of Handling 5:1 VSWR, @ 28 Vdc, 1960 MHz, 60 Watts CW Output Power Features * Characterized with Series Equivalent Large - Signal Impedance Parameters ... |
| Description |
RF Power Field Effect Transistors
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| File Size |
605.95K /
16 Page |
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it Online |
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Freescale (Motorola)
FREESCALE[Freescale Semiconductor, Inc]
飞思卡尔半导体(中国)有限公司
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| Part No. |
MRF6P27160HR6
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| OCR Text |
...rain Efficiency -- 22.6% ACPR @ 885 kHz Offset -- - 47.8 dBc @ 30 kHz Bandwidth * Capable of Handling 10:1 VSWR, @ 28 Vdc, 2700 MHz, 160 Watts CW Output Power * Characterized with Series Equivalent Large - Signal Impedance Parameters * Inte... |
| Description |
RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET RF功率场效应晶体管N沟道增强型MOSFET的侧
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| File Size |
440.42K /
12 Page |
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it Online |
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FREESCALE[Freescale Semiconductor, Inc]
MOTOROLA
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| Part No. |
MRF6P27160H_06 MRF6P27160H MRF6P27160HR6_06 MRF6P27160HR6 MRF6P27160HR606 MRF6P27160H06
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| OCR Text |
...rain Efficiency -- 22.6% ACPR @ 885 kHz Offset -- - 47.8 dBc in 30 kHz Bandwidth * Capable of Handling 10:1 VSWR, @ 28 Vdc, 2650 MHz, 160 Watts CW Output Power Features * Characterized with Series Equivalent Large - Signal Impedance Paramet... |
| Description |
RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
2700 MHz, 35 W AVG., 28 V Single N??DMA Lateral N??hannel RF Power MOSFET
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| File Size |
483.58K /
12 Page |
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it Online |
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FREESCALE SEMICONDUCTOR INC
MOTOROLA[Motorola, Inc]
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| Part No. |
MRF5S19090LSR3 MRF5S19090LR3
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| OCR Text |
...over a 30 kHz Bandwidth at f1 - 885 kHz and f2 +885 kHz. Distortion Products Measured over 1.2288 MHz Bandwidth at f1 - 2.5 MHz and f2 +2.5 MHz. Peak/Avg. = 9.8 dB @ 0.01% Probability on CCDF. Output Power -- 18 Watts Avg. Power Gain -- 14.... |
| Description |
L BAND, Si, N-CHANNEL, RF POWER, MOSFET
1990 MHz, 18 W AVG 2 x N-CDMA, 28 V LATERAL N-CHANNEL RF POWER MOSFETs
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| File Size |
409.09K /
12 Page |
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it Online |
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FREESCALE[Freescale Semiconductor, Inc]
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| Part No. |
MRF5S19090HSR3 MRF5S19090HR3
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| OCR Text |
... in 1.2288 MHz Bandwidth ACPR @ 885 kHz Offset -- - 51 dB in 30 kHz Bandwidth * Capable of Handling 10:1 VSWR, @ 28 Vdc, 1960 MHz, 90 Watts CW Output Power Features * Characterized with Series Equivalent Large - Signal Impedance Parameters ... |
| Description |
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
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| File Size |
413.60K /
12 Page |
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it Online |
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