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INFINEON[Infineon Technologies AG]
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Part No. |
IDB09E120 Q67040-S4384 Q67040-S4479 IDP09E120
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OCR Text |
...tics Reverse recovery time
V R=800V, IF=9A, di F/dt=750A/s, Tj=25C V R=800V, IF=9A, di F/dt=750A/s, Tj=125C V R=800V, IF=9A, di F/dt=750A/s...4 6.5 6.6 A nC -
Peak reverse current
V R=800V, IF = 9 A, diF/dt=750A/s, Tj=25C V R=800V, IF =9A... |
Description |
Fast Switching EmCon Diode 快速开关快恢复二极 From old datasheet system Silicon Power Diodes - 9A EmCon in TO220-2 Silicon Power Diodes - 9A EmCon in TO263
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File Size |
195.90K /
9 Page |
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it Online |
Download Datasheet |
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Fuji Semiconductors, Inc.
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Part No. |
2SK2648
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OCR Text |
...D=1mA VGS=0V ID=1mA VDS=VGS VDS=800V VGS=0V VGS=35V VDS=0V ID=4.5A VGS=10V ID=4.5A VDS=25V VDS=25V VGS=0V f=1MHz VCC=600V ID=9A VGS=10V RGS=10 L=100 H Tch=25C IF=2xIDR VGS=0V Tch=25C IF=IDR VGS=0V -di/dt=100A/s Tch=25C Tch=25C Tch=125C
... |
Description |
TRANSISTOR,MOSFET,N-CHANNEL,800V V(BR)DSS,9A I(D),TO-247VAR From old datasheet system
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File Size |
69.48K /
4 Page |
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it Online |
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INTERSIL[Intersil Corporation]
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Part No. |
RF1S4N100SM RFP4N100 FN2457
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OCR Text |
...50A VDS = 1000V, VGS = 0V VDS = 800V, VGS = 0V, TC = 150oC MIN 1000 2 VGS = 20V, ID = 3.9A, VDS = 800V (Figure 13) TYP MAX 4 25 100 100 3.500 30 50 170 50 120 UNITS V V A A nA ns ns ns ns nC
oC/W oC/W
Drain to Source Breakdown Voltage ... |
Description |
4.3A/ 1000V/ 3.500 Ohm/ High Voltage/ N-Channel Power MOSFETs 4.3A, 1000V, 3.500 Ohm, High Voltage, N-Channel Power MOSFETs From old datasheet system
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File Size |
45.56K /
6 Page |
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it Online |
Download Datasheet |
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Price and Availability
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