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SANYO[Sanyo Semicon Device]
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Part No. |
2SK3618
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OCR Text |
...l Qg Qgs Qgd VSD Conditions VDS=50v, VGS=10V, ID=8a VDS=50v, VGS=10V, ID=8a VDS=50v, VGS=10V, ID=8a IS=8a, VGS=0V Ratings min typ 24 3.2 5.5 0.9 1.2 max Unit nC nC nC V
Note) Although the protection diode is contained between gate and so... |
Description |
General-Purpose Switching Device Applications
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File Size |
36.92K /
4 Page |
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FAIRCHILD[Fairchild Semiconductor]
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Part No. |
FQA8N100C
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OCR Text |
...= 250A VGS = 10V, ID = 4A VDS = 50v, ID = 4A VDS = 25V, VGS = 0V, f = 1.0MHz
(Note 4)
Min.
1000 -----3.0 ------
Typ.
-1.4 -----1.2 ...8a RG = 25 ---(Note 4, 5)
-----
VDS = 800V, ID = 8a VGS = 10V
(Note 4, 5)
Drain-Source Dio... |
Description |
1000V N-Channel MOSFET
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File Size |
690.13K /
8 Page |
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IRF[International Rectifier]
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Part No. |
IRF634NSPBF IRF634NLPBF IRF634NPBF
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OCR Text |
..., ID = 250A 5.4 --- --- S VDS = 50v, ID = 4.8a --- --- 25 VDS = 250v, VGS = 0V A --- --- 250 VDS = 200V, VGS = 0V, TJ = 150C --- --- 100 VGS = 20V nA --- --- -100 VGS = -20V --- --- 34 ID = 4.8a --- --- 6.5 nC VDS = 200V --- --- 16 VGS = 1... |
Description |
HEXFET Power MOSFET
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File Size |
219.70K /
11 Page |
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it Online |
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IRF[International Rectifier]
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Part No. |
IRFY9140CM IRFY9140C
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OCR Text |
... VGS = -10V, ID = -15.8a VDS = -50v VDD = -50v, ID = -15.8a, VGS = -10V, RG =7.5
ns
nH
Measured from drain lead (6mm/ 0.25in. from package) to source lead (6mm/0.25in. from package)
Ciss C oss C rss
Input Capacitance Output C... |
Description |
POWER MOSFET THRU-HOLE (TO-257AA)
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File Size |
253.79K /
7 Page |
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it Online |
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IRF[International Rectifier]
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Part No. |
IRFY9140M IRFY9140
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OCR Text |
... VGS = -10V, ID = -15.8a VDS = -50v VDD = -50v, ID = -15.8a, VGS = -10V, RG =7.5
IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD
Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge... |
Description |
POWER MOSFET THRU-HOLE (TO-257AA)
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File Size |
277.03K /
7 Page |
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it Online |
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IRF[International Rectifier]
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Part No. |
IRHF7330SE IRHF7330SEPBF
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OCR Text |
..., IF = 2.9A, di/dt 100A/s VDD 50v
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Therm...8a VGS = 12V, ID = 1.8a VGS = 0V, ID = 2.9A
Min
400 2.0 -- -- -- -- -- --
Max
-- 4.5 100 -10... |
Description |
2.9 A, 400 V, 1.39 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-205AF) 400V 100kRad Hi-Rel Single N-Channel SEE Hardened MOSFET in a TO-205AF package
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File Size |
125.12K /
8 Page |
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it Online |
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Price and Availability
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