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SONY
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| Part No. |
CXG7002FN
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| OCR Text |
...between gate and source v gso 1.5 v gain control voltage vp ctl 2.5 v drain current i dd 550 ma allowable power dissipation p d 3w <sw...30 min. 12.5 ?11 25 item current consumption power gain noise figure input ip3 isolation when no sig... |
| Description |
Power Amplifier, Switch and LNA/Mixer
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| File Size |
121.03K /
9 Page |
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INFINEON[Infineon Technologies AG]
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| Part No. |
BFP540ESD
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| OCR Text |
...V (HBM) * Outstanding G ms = 21.5 dB Noise Figure F = 0.9 dB * Gold metallization for high reliability * SIEGET 45 - Line * Short term desc...30 0.14
0.24
GHz pF
Ccb
Cce
-
0.41
-
Ceb
-
0.59
-
F G ms 0.9 1.3... |
| Description |
NPN Silicon RF Transistor
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| File Size |
224.54K /
9 Page |
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it Online |
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Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
MGF0913A
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| OCR Text |
...ture
Ratings
-15 -15 800 -2.5 5.4 5.0 175 -65 to +175
Unit
V V mA mA mA W C C
Electrical characteristics
Symbol
IDSS VGS(off) g...30
Unit
mA V mS dBm % dB dB C/W
*1:Channel to case /
Above parameters, ratings, limits are... |
| Description |
L & S BAND GaAs FET [ SMD non - matched ]
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| File Size |
43.80K /
4 Page |
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it Online |
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
MGF0915A_03 MGF0915A MGF0915A03
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| OCR Text |
...URES
* High output power Po=36.5 dBm(TYP.) @f=1.9GHz,Pin=23dBm * High power gain Gp=14.5 dB(TYP.) @f=1.9GHz * High power added efficiency a...30 Gp(dB),Po(dBm) 25
PAE VDS=10V ID=0.8A Po
80 70 60 50 40
Gp
f=1.9GHz
20 15 10 5 0 5 10 ... |
| Description |
L & S BAND GaAs FET
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| File Size |
42.10K /
3 Page |
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it Online |
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
MGF0912A
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| OCR Text |
...
RECOMMENDED BIAS CONDITIONS
5.0
Absolute maximum ratings
Symbol
VGSO VGDO ID IGR IGF PT Tch Tstg
Parameter
Gate to sourcebreakd...30 63 53.6 175 -65 to +175
Unit
V V A mA mA W C C
GF-7
(1) GATE (2) SOURCE (FLANGE) (3) DR... |
| Description |
L & S BAND GaAs FET
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| File Size |
24.00K /
3 Page |
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it Online |
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Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
MGF0919A
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| OCR Text |
...0 260 30 37 19 1.2 17 Max. 800 -5.0 25
Unit
mA V mS dBm % dB dB C/W
*1:Channel to case /
Above parameters, ratings, limits are subject to change.
Mitsubishi Electric
June/2004
MGF0919A TYPICAL CHARACTERISTICS
Po,Gp,PAE... |
| Description |
L & S BAND GaAs FET [ SMD non matched ]
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| File Size |
42.74K /
4 Page |
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it Online |
Download Datasheet |
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5.30-5.90ghz Found Datasheets File :: 56 Search Time::2.234ms
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