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  5.0a 1200v Datasheet PDF File

For 5.0a 1200v Found Datasheets File :: 709    Search Time::3.766ms    
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    Infineon Technologies A...
Part No. IKW15N120H3-14
OCR Text .... . . . . . . . . . . . . . . . 5 electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...0a t vj =25c t vj =125c t vj =175c - - - 2.05 2.50 2.70 2.40 - - v diode forward voltage v f v...
Description 1200v high speed switching series third generation

File Size 2,297.64K  /  16 Page

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    QM300DY-24B

MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. QM300DY-24B
OCR Text ...IRCUIT DIAGRAM 114 27 M8 25 21.5 2-M6 Dimensions in mm B2X C2E1 E2 B2 6 21 930.3 114 E2 38 E2 7 B1X C1 B1 E1 ...0A -- -- Transistor part (per 1/2 module) Diode part (per 1/2 module) Conductive grease applied (per...
Description HIGH POWER SWITCHING USE INSULATED TYPE

File Size 83.90K  /  5 Page

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    QM300DY-24

MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. QM300DY-24
OCR Text ...nsions in mm 114 M8 27 25 21.5 2-M6 B2X B2 E2 18 B2X C1 E2 B2 6 C2E1 E2 21 6 B1 E1 7 B1X 14 C1 114 38 ...0A -- -- Transistor part (per 1/2 module) Diode part (per 1/2 module) Conductive grease applied (per...
Description HIGH POWER SWITCHING USE INSULATED TYPE

File Size 81.23K  /  5 Page

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    QM300HA-24B

MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. QM300HA-24B
OCR Text ... Dimensions in mm 108 4-R6.5 7.5 9 930.25 16 16 7 14 16 9 E 10 10 480.25 8 4-6.5 BX B 14 E C 9 3 18.5 25 ...0A -- -- Transistor part Diode part Conductive grease applied -- -- -- Typ. -- -- -- -- -- -- -- -- ...
Description HIGH POWER SWITCHING USE INSULATED TYPE

File Size 72.24K  /  5 Page

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    QM300HA-24

MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
Part No. QM300HA-24
OCR Text ...in mm 108 93 E 16 BX 9 3 C 6.5 4 E BX C 20 20 9 B 16 48 62 B (13) (21) (29) 4 M4 6.5 M6 41.5 M6 ...0A IB=3.0A 300 IB=1.0A 200 IB=2.0A IB=0.5A 100 Tj=25C 0 1 2 3 4 5 0 COLLECTOR-EMITTER...
Description 300 A, 3 CHANNEL, NPN, Si, POWER TRANSISTOR
HIGH POWER SWITCHING USE INSULATED TYPE

File Size 76.58K  /  5 Page

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    Infineon Technologies A...
Part No. IKW25N120H3
OCR Text .... . . . . . . . . . . . . . . . 5 electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...0a t vj =25c t vj =125c t vj =175c - - - 2.05 2.50 2.70 2.40 - - v diode forward voltage v f v...
Description 1200v high speed switching series third generation

File Size 2,322.77K  /  16 Page

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    IRG7PH37K10D

International Rectifier
Part No. IRG7PH37K10D
OCR Text ...ge(th) gate threshold voltage 5.0 7.5 v v ce = v ge , i c = 720a ? v ge(th) / ? t j threshold voltage te mperature coeff. -15...0a 2.4 i f = 6.0a, t j = 150c switching characteristics @ t j = 25c (unless otherwise sp...
Description 1200v UltraFast 4-20 kHz Copack IGBT in a TO-247 package

File Size 784.08K  /  12 Page

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    IHW20T120

INFINEON[Infineon Technologies AG]
Part No. IHW20T120
OCR Text ..., I C = 20A T j = 25 C T j = 12 5 C T j = 15 0 C Diode forward voltage VF V G E = 0V, I F = 9A T j = 25 C T j = 12 5 C T j = 15 0 C Gate-emi...0A, V C E =V G E V C E = 1200v, V G E = 0V T j = 25 C T j = 15 0 C Gate-emitter leakage current Tran...
Description IGBTs & DuoPacks - 20A / 1200v IGBT and 9A / 1200v Diode in DuoPack
Soft Switching Series

File Size 316.12K  /  14 Page

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    SGW25N12009 SGW25N120

Infineon Technologies AG
Part No. SGW25N12009 SGW25N120
OCR Text ...n short circuits: >1s. 1 Rev. 2.5 Nov. 09 Power Semiconductors SGW25N120 Thermal Resistance Parameter Characteristic IGBT thermal re...0A 10Hz 100Hz 1kHz 10kHz 100kHz 1V 10V 100V 1000V f, SWITCHING FREQUENCY ...
Description Fast IGBT in NPT-technology 40% lower Eoff compared to previous generation

File Size 331.27K  /  11 Page

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