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28.322 Datasheet PDF File

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				Advanced Power Technology Ltd.
Part No.	APT5010JLC
OCR Text	...bient MIN TYP MAX UNIT C/W 0.28 40 3 See MIL-STD-750 Method 3471 4 Starting T = +25C, L = 2.58mH, R = 25W, Peak I = 44A j G L 1 Repet...322) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 11.8 (.463) 12.2 (.480) 8.9 (.35...
Description	POWER MOS VI 500V 44A 0.100 Ohm Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs.
File Size	34.93K / 2 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT5010JLL
OCR Text	...bient MIN TYP MAX UNIT C/W 0.28 40 3 See MIL-STD-750 Method 3471 4 Starting T = +25C, L = 1.86mH, R = 25W, Peak I = 44A j G L 1 Repet...322) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 11.8 (.463) 12.2 (.480) 8.9 (.35...
Description	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS
File Size	51.35K / 2 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT5010JVFR
OCR Text	...MIN TYP MAX UNIT C/W Volts 0.28 40 2500 13 lb*in 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 Pul...322) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 11.8 (.463) 12.2 (.480) 8.9 (.35...
Description	POWER MOS V 500V 44A 0.100 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	73.63K / 4 Page	View it Online	Download Datasheet

				Advanced Power Technolo... Advanced Power Technology, Ltd.
Part No.	APT5010JVR
OCR Text	...MIN TYP MAX UNIT C/W Volts 0.28 40 2500 13 lb*in 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 Pu...322) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 11.8 (.463) 12.2 (.480) 8.9 (.35...
Description	POWER MOS V 500V 44A 0.100 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. ECONOLINE: REC3-S_DRW(Z)/H* - 3W DIP Package- 1kVDC Isolation- Wide Input 2:1 & 4:1- Regulated Output- 100% Burned In- UL94V-0 Package Material- Continuous Short Circiut Protection- Efficiency to 80% 电源MOS V是一个高电压N新一代通道增强型功率MOSFET
File Size	71.26K / 4 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT8028JVR APT5010JVR
OCR Text	...28JVR UNIT Volts Amps 800 28 112 30 40 500 4 -55 to 150 300 16 30 4 Gate-Source Voltage Continuous Gate-Source Voltage Transient T...322) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 11.8 (.463) 12.2 (.480) 8.9 (.35...
Description	POWER MOS V 800V 28A 0.280 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	71.26K / 4 Page	View it Online	Download Datasheet

				Advanced Power Technology, Ltd. ADPOW[Advanced Power Technology]
Part No.	APT8030JN APT8035JN
OCR Text	...YP MAX UNIT 5780 725 240 245 28 113 14 14 48 12 6800 1015 360 370 40 170 28 28 72 24 ns nC pF Gate-Source Charge Gate-Drain ("Mill...322) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 8.9 (.350) 9.6 (.378) Hex Nut M4...
Description	POTENTIOMETER, 1.5W 50K POTENTIOMETER, 1.5W 50K; VARIABLE ROTARY WIREWOUND; RESISTANCE, TRACK:50KR; SERIES:535; POWER RATING:1.5W; CASE STYLE:PANEL MOUNT; DIAMETER, BODY:22.2MM; DIAMETER, SHAFT:6.35MM; TURNS, NO. RoHS Compliant: Yes N沟道增强型高压功率MOSFET N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS POWER MOS V 800V 27.0A 0.30/0.35 Ohm
File Size	61.59K / 4 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT8030JVFR
OCR Text	...8 7900 900 480 510 47 250 32 28 90 16 ns nC Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off De...322) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 11.8 (.463) 12.2 (.480) 8.9 (.35...
Description	POWER MOS V 800V 25A 0.300 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	69.94K / 4 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT8030JVR
OCR Text	...8 7900 900 480 510 47 250 32 28 90 16 ns nC pF Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off...322) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 11.8 (.463) 12.2 (.480) 8.9 (.35...
Description	POWER MOS V 800V 25A 0.300 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	67.66K / 4 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	EHD66764
OCR Text	...7 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 pad name ...322 323 324 325 326 327 328 329 330 331 332 333 334 335 336 337 338 339 340 341 pad name DUMMY61 DUM...
Description	176-channel Common Driver for Color Displays
File Size	247.11K / 38 Page	View it Online	Download Datasheet

				Altera Corporation
Part No.	EPM3512A
OCR Text	...7 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 208-Pin PQFP 173 175 176 (1) 1...322 323 324 325 326 327 328 329 330 331 332 333 334 335 336 337 338 339 340 341 342 343 344 345 346 ...
Description	EPM3512A Dedicated Pin-Outs EPM3512A Dedicated Pin-Outs
File Size	40.61K / 12 Page	View it Online	Download Datasheet

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