110 120v pdf Datasheet P3 Full Text Search --- IC-ON-LINE


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110 120v Datasheet PDF File

For 110 120v Found Datasheets File :: 904 Search Time::2.109ms
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				ST Microelectronics STMICROELECTRONICS[STMicroelectronics]
Part No.	STP40NS15
OCR Text	...= 10V Min. Typ. 25 45 100 17 47 110 Max. Unit ns ns nC nC nC SWITCHING OFF Symbol td(off) Tf tr(Voff) Parameter Turn-off Delay Time Fall...120v, ID = 20 A, RG = 4.7, VGS = 10V (see test circuit, Figure 5) Min. Typ. 85 Max. Unit ns 47 ...
Description	N-CHANNEL 150V 0.042 OHM 40A TO-220 MESH OVERLAY MOSFET N-CHANNEL 150V - 0.042ohm - 40A TO-220 MESH OVERLAY MOSFET N-CHANNEL 150V - 0.042ohm - 40A TO-220 MESH OVERLAY⑩ MOSFET
File Size	113.58K / 6 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT6020LVR
OCR Text	... 0.76 (.030) 1.30 (.051) 2.79 (.110) 3.18 (.125) 5.45 (.215) BSC 2-Plcs. 050-5628 Rev A Dimensions in Millimeters and (Inches) APT's devices are covered by one or more of the following U.S.patents: 4,895,810 5,256,583 5,045,903 ...
Description	POWER MOS V 600V 30A 0.200 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	63.86K / 4 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT6030BN APT6033BN
OCR Text	...35 90 50 3500 710 285 210 27 110 40 70 130 100 ns nC pF Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time...120v VDS=300V 16 12 VDS=480V 20 10 5 2 1 8 4 40 80 120 160 200 Qg, TOTAL GATE CHAR...
Description	POWER MOS IV 600V 22.0A 0.33 Ohm / 600V 23.0A 0.30 Ohm N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
File Size	51.10K / 4 Page	View it Online	Download Datasheet

				NTE[NTE Electronics]
Part No.	NTE291 NTE292
OCR Text	...urve tracer. .420 (10.67) Max .110 (2.79) .147 (3.75) Dia Max .500 (12.7) Max .250 (6.35) Max .500 (12.7) Min .070 (1.78) Max Base .100 (2.54) Emitter Collector/Tab
Description	Silicon Complementary Transistors Medium Power Amp, Switch
File Size	23.36K / 2 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor]
Part No.	NZT605
OCR Text	...unction Temperature Range Value 110 140 10 1.5 - 55 ~ +150 Units V V V A C * These ratings are limiting values above which the serviceabi...120v, IE = 0 VCE = 120v, IE = 0 VEB = 8.0V, IC = 0 IC = 50mA, VCE = 5.0V IC = 500mA, VCE = 5.0V IC =...
Description	NPN Darlington Transistor
File Size	36.75K / 3 Page	View it Online	Download Datasheet

				STMICROELECTRONICS[STMicroelectronics]
Part No.	STB30NS15
OCR Text	...ure Value 150 150 20 30 21 120 110 0.73 2 250 -55 to 175 Unit V V V A A A W W/C V/ns mJ C ) Pulse width limited by safe operating area....120v ID=30A VGS=10V Min. Typ. 12 28 64 8 27 Max. Unit ns ns nC nC nC SWITCHING OFF() Symbol td(...
Description	N-CHANNEL 150V - 0.075 ohm - 30A D2PAK LOW GATE CHARGE STripFET⑩ POWER MOSFET N-CHANNEL 150V - 0.075 ohm - 30A D2PAK LOW GATE CHARGE STripFET POWER MOSFET
File Size	340.74K / 9 Page	View it Online	Download Datasheet

				ST Microelectronics STMICROELECTRONICS[STMicroelectronics] 意法半导 STMicroelectronics N.V.
Part No.	SMP100MC SMP100MC-120 SMP100MC-140 SMP100MC-160 SMP100MC-200 SMP100MC-230 SMP100MC-270 -SMP100MC-200
OCR Text	... Tj(C) 40 50 60 70 80 90 100 110 120 130 Figure 6: Relative variation of breakover voltage versus junction temperature VBO[Tj] / VBO[Tj=25C] 1.08 1.07 1.06 1.05 1.04 1.03 1.02 1.01 1.00 0.99 0.98 0.97 0.96 0.95 0.94 -40 -30 -20 -10 ...
Description	TRISIL?/a> FOR TELECOM EQUIPMENT PROTECTION TELECOM EQUIPMENT PROTECTION: TRISIL TRISIL FOR TELECOM EQUIPMENT PROTECTION TRISIL⑩ FOR TELECOM EQUIPMENT PROTECTION TRISILFOR TELECOM EQUIPMENT PROTECTION ⑩的TRISIL用于电信设备保护
File Size	107.32K / 10 Page	View it Online	Download Datasheet

				INTERSIL[Intersil Corporation]
Part No.	CA3080 CA3080A CA3080AE CA3080AM CA3080AM96 CA3080E CA3080M CA3080M96 FN475 INTERSILCORP-CA3080AE
OCR Text	...4.5 13.5 -14.4 1 30 0.08 0.3 45 110 2 75 50 MAX 1.2 36 MIN 12 -12 12 -12 0.8 24 80 CA3080A TYP 13.8 -14.5 13.5 -14.4 1 30 0.08 0.3 45 110 2 ...120v AC MT1 60Hz 7 10 NOTE: All resistors 1/2 watt, unless otherwise specified. FIGURE 9. T...
Description	2MHz, Operational Transconductance Amplifier (OTA) From old datasheet system
File Size	878.71K / 11 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF5802 IRF5802TR
OCR Text	...5V --- 7.7 --- pF = 1.0MHz --- 110 --- VGS = 0V, VDS = 1.0V, = 1.0MHz --- 14 --- VGS = 0V, VDS = 120v, = 1.0MHz --- 3.0 --- VGS = 0V, VDS = 0V to 120v Avalanche Characteristics Parameter EAS IAR Single Pulse Avalanche Energy Avalan...
Description	150V Single N-Channel HEXFET Power MOSFET in a TSOP-6 (Micro 6) package Power MOSFET(Vdss=150V, Id=0.9A) Power MOSFET(Vdss=150V/ Id=0.9A) 0.9 A, 150 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET
File Size	125.73K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF7451
OCR Text	...--- --- --- 76 270 2.3 A 29 1.3 110 400 V ns nC Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25C, IS ...120v V DS = 75V V DS = 30V 12 1000 Ciss Coss 8 100 Crss 10 1 10 100 1000 4 ...
Description	Power MOSFET(Vdss=150V Rds(on)max=0.09ohm Id=3.6A) Power MOSFET(Vdss=150V, Rds(on)max=0.09ohm, Id=3.6A)
File Size	157.52K / 8 Page	View it Online	Download Datasheet

For 110 120v Found Datasheets File :: 904 Search Time::2.109ms
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