| |
|
 |
FAIRCHILD[Fairchild Semiconductor]
|
| Part No. |
FDMS2672
|
| OCR Text |
...pacitance Gate Resistance VDS = 100v, VGS = 0V, f = 1MHz f = 1MHz 1740 95 30 0.9 2315 125 45 pF pF pF
Switching Characteristics
td(on) ...7a VDD = 100v, ID = 3.7a VGS = 10V, RGEN = 6 22 11 36 10 30 7 8 34 22 57 20 42 ns ns ns ns nC nC nC
... |
| Description |
N-Channel UltraFET Trench MOSFET 200V, 20A, 77mohm
|
| File Size |
494.79K /
7 Page |
 View
it Online |
Download Datasheet
|
| |
|
|
SamHop Microelectronics...
|
| Part No. |
STT02N20
|
| OCR Text |
...switching characteristics v dd =100v i d =0.7a v gs =10v r gen = 6 ohm total gate charge rise time turn-off delay time fall time turn-on delay time ohm v gs =10v , i d =0.7a v ds =10v , i d =0.7a input capacitance output capacitance dyna... |
| Description |
Super high dense cell design for low RDS(ON).
N-Channel Logic Level Enhancement Mode Field Effect Transistor
|
| File Size |
132.69K /
8 Page |
View
it Online |
Download Datasheet |
| |
|
|
INTERSIL[Intersil Corporation]
|
| Part No. |
FRS9240H FRS9240R FRS9240D FN3265
|
| OCR Text |
...ncement types with ratings from 100v to 500V, 1A to 60A, and on resistance as low as 25m. Total dose hardness is offered at 100K RAD(Si) and...7a, VGD = 0 I = 7a; di/dt = 100A/S VDD = -100v, ID = 7a IGS1 = IGS2 0 VGS 20 TEST CONDITIONS VGS =... |
| Description |
7a/ -200V/ 0.735 Ohm/ Rad Hard/ P-Channel Power MOSFETs
7a, -200V, 0.735 Ohm, Rad Hard, P-Channel Power MOSFETs
From old datasheet system
|
| File Size |
47.82K /
6 Page |
View
it Online |
Download Datasheet |
| |
|
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
| Part No. |
RFD7N10LE RFD7N10LESM FN3598
|
| OCR Text |
100v, 0.300 Ohm, N-Channel, Logic Level, Power MOSFETs
These N-Channel power MOSFETs are manufactured using a modern process. This process,...7a, 100v * rDS(ON) = 0.300 * Temperature Compensating PSPICE(R) Model * Can be Driven Directly from ... |
| Description |
7a, 100v, 0.300 Ohm, N-Channel, Logic Level, Power MOSFETs 7 A, 100 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA
From old datasheet system
|
| File Size |
359.30K /
7 Page |
View
it Online |
Download Datasheet |
| |
|
|
Infineon
|
| Part No. |
SGI02N120
|
| OCR Text |
...hstand time 1) v ge = 15v, 100v v cc 1200v, t j 150 c t sc 10 s power dissipation t c = 25 c p tot 62 w operati...7a t c , case temperature t c , case temperature figure 3. power dissipation as a functio... |
| Description |
IGBTs & DuoPacks - 2A 600V TO 262 SMD IGBT
|
| File Size |
324.52K /
13 Page |
View
it Online |
Download Datasheet |
| |
|
|
Infineon
|
| Part No. |
SGD02N120
|
| OCR Text |
... withstand time 1) v ge = 15v, 100v v cc 1200v, t j 150 c t sc 10 s power dissipation t c = 25 c p tot 62 w operating junct...7a t c , case temperature t c , case temperature figure 3. power dissipation as a function of case... |
| Description |
IGBTs & DuoPacks - 2A 1200V TO252AA SMD IGBT
|
| File Size |
399.11K /
12 Page |
View
it Online |
Download Datasheet |
|
Price and Availability
|
