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ShenZhen FreesCale Electronics. Co., Ltd
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| Part No. |
SUD50P04-08
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| OCR Text |
08 p-channel 40-v (d-s) mosfet features ? halogen-free according to iec 61249-2-21 definition ? trenchfet ? power mosfet ? 100 % r g and uis tested ? compliant to rohs directive 2002/95/ec applications ? power switch ? load switch i... |
| Description |
P-Channel 40-V (D-S) MOSFET
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| File Size |
470.33K /
8 Page |
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it Online |
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INFINEON[Infineon Technologies AG]
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| Part No. |
SPP80N06S2-08 SPB80N06S2-08 SPI80N06S2-08
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| OCR Text |
08 SPP80N06S2-08,SPB80N06S2-08
OptiMOS(R) Power-Transistor
Feature
* N-Channel
Product Summary VDS R DS(on) ID
P- TO262 -3-1 P- TO263 -3-2
55 8 80
P- TO220 -3-1
V m A
* Enhancement mode * 175C operating temperature * Aval... |
| Description |
Low Voltage MOSFETs - TO220/263/262; 80 A; 55V; NL; 8 mOhm
OptiMOS Power-Transistor
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| File Size |
419.44K /
8 Page |
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it Online |
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INFINEON[Infineon Technologies AG]
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| Part No. |
SPU30N03S2-08
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| OCR Text |
08 OptiMOS(R) Power-Transistor
Feature
* N-Channel
Product Summary VDS R DS(on) ID 30 8.2 30
P- TO251 -3-1
V m A
* Enhancement mode * Low On-Resistance RDS(on) * Excellent Gate Charge x RDS(on) product (FOM)
* Superior thermal ... |
| Description |
Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, IPAK, RDSon = 8.2mOhm, 30A, NL
OptiMOS Power-Transistor
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| File Size |
256.65K /
8 Page |
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it Online |
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Vishay Intertechnology,Inc.
VISAY[Vishay Siliconix]
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| Part No. |
SUD40N02-08
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| OCR Text |
08
Vishay Siliconix
N-Channel 20-V (D-S), 175C MOSFET
CHARACTERISTICS
* N-Channel Vertical DMOS * Macro Model (Subcircuit Model) * Level 3 MOS * Apply for both Linear and Switching Application * Accurate over the -55 to 125C Temperatu... |
| Description |
N-Channel 20-V (D-S), 175C MOSFET
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| File Size |
177.58K /
3 Page |
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it Online |
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Vishay Intertechnology, Inc.
VISAY[Vishay Siliconix]
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| Part No. |
SUP85N08-08 SUB85N08-08
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| OCR Text |
08
New Product
Vishay Siliconix
N-Channel 75-V (D-S) 175_C MOSFET
PRODUCT SUMMARY
V(BR)DSS (V)
75
rDS(on) (W)
0.008 @ VGS = 10 V
ID (A)
85 a
TO-220AB
D
TO-263
G DRAIN connected to TAB G GDS Top View SUP85N08-08... |
| Description |
N-Channel 75-V (D-S) 175 Degree Celcious MOSFET N通道75 - V（下副秘书长175度Celcious MOSFET
N-Channel 75-V (D-S) 175C MOSFET N通道75 - V（下副秘书长75荤MOSFET
N-Channel MOSFET
N-Channel 75-V (D-S) 175C MOSFET
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| File Size |
59.29K /
5 Page |
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it Online |
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MACOM[Tyco Electronics]
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| Part No. |
TGF2021-08
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| OCR Text |
08
Key Features and Performance
Frequency Range: DC - 12 GHz > 39 dBm Nominal Psat 59% Maximum PAE 11 dB Nominal Power Gain Suitable for high reliability applications 8mm x 0.35 m Power pHEMT Nominal Bias Vd = 8-12V, Idq = 600-1000mA (U... |
| Description |
DC - 12 GHz Discrete power pHEMT
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| File Size |
139.27K /
8 Page |
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it Online |
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TELEDYNE[Teledyne Technologies Incorporated]
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| Part No. |
TGM-08-2005 TGM-08-2004
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| OCR Text |
08-2005
Module Amplifier
2 GHz - 8 GHz
This Module Amplifier offers exceptional performance over the band 2 GHz to 8 GHz with 14 dBm P1dB output power and 12 dB Gain. Teledyne Microwave amplifiers are balanced or feedback designs and... |
| Description |
Module Amplifier 2 GHz - 8 GHz
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| File Size |
905.86K /
2 Page |
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it Online |
Download Datasheet |
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Price and Availability
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