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121KL E005976 30ETH06S MTD8060P 1E106 PST993I AP4412GM E005972
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  0.01 1000 Datasheet PDF File

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    2SA2048

Rohm CO.,LTD.
ROHM[Rohm]
Part No. 2SA2048
OCR Text ...nsions (Units : mm) TSMT3 1.9 0.95 0.95 (1) 2.8 1.6 0.4 (3) (2) 2.9 1.0MAX 0.16 (1)Base (2)Emitter (3)Collector 0.1...01 -0.1 -1 -10 -100 10 -0.01 -0.1 -1 -10 1 -0.001 -0.01 -0.1 -1 -10...
Description Medium power transistor (−30V, −1.0A)
Medium power transistor (-30V, -1.0A)

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    2SA2049

ROHM[Rohm]
Part No. 2SA2049
OCR Text ...ensions (Units : mm) MPT3 1.5 0.4 1.0 (1) 4.0 2.5 0.5 0.5 (3) 1.5 0.4 (1)Base (2)Collector (3)Emitter 0.4 Each...01 Single non repetitive Pulse -0.001 -0.01 -0.1 Ton -1 -10 -100 10 -0.01 -0.1 ...
Description MEDIUM POWER TRANSISTOR

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    2SA2056

TOSHIBA[Toshiba Semiconductor]
Part No. 2SA2056
OCR Text ...t gain: hFE = 200 to 500 (IC = -0.5 A) Low collector-emitter saturation voltage: VCE (sat) = -0.2 V (max) High-speed switching: tf = 90 ns (...01 g (typ.) Note 1: Mounted on FR4 board (glass epoxy, 1.6 mm thick, Cu area: 2 645 mm ) Elect...
Description TOSHIBA Transistor Silicon PNP Epitaxial Type

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    2SA2057

PANASONIC[Panasonic Semiconductor]
Part No. 2SA2057
OCR Text ...0.2 Solder Dip 1.40.2 1.60.2 0.80.1 3.00.5 2.60.1 0.550.15 Absolute Maximum Ratings TC = 25C Parameter Collector-base volta...01 - 0.001 - 0.01 - 0.1 -1 -10 Ambient temperature Ta (C) Base-emitter voltage VBE...
Description Silicon PNP epitaxial planar type

File Size 72.39K  /  3 Page

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    2SA2058

TOSHIBA[Toshiba Semiconductor]
Part No. 2SA2058
OCR Text ...t gain: hFE = 200 to 500 (IC = -0.2 A) Low collector-emitter saturation voltage: VCE (sat) = -0.19 V (max) High-speed switching: tf = 25 ns ...01 g (typ.) Note: Mounted on FR4 board (glass epoxy, 1.6 mm thick, Cu area: 2 645 mm ) Electri...
Description TOSHIBA Transistor Silicon PNP Epitaxial Type

File Size 194.32K  /  5 Page

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    2SA2059

TOSHIBA[Toshiba Semiconductor]
Part No. 2SA2059
OCR Text ...t gain: hFE = 200 to 500 (IC = -0.5 A) Low collector-emitter saturation voltage: VCE (sat) = -0.19 V (max) High-speed switching: tf = 40 ns ...01 -0.1 -1 -10 Collector current IC (A) VCE (sat) - IC -10 Common emitter IC/I...
Description SILICON PNP EPITAXIAL TYPE

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    2SA2061

TOSHIBA[Toshiba Semiconductor]
Part No. 2SA2061
OCR Text ...nt gain: hFE = 200 to 500 (IC = 0.5 A) Low collector-emitter saturation voltage: VCE (sat) = -0.19 V (max) High-speed switching: tf = 40 ns ...01 g (typ.) Note: Mounted on FR4 board (glass epoxy, 1.6 mm thick, Cu area: 2 645 mm ) Electri...
Description Silicon PNP Epitaxial Type

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    2SA2069

TOSHIBA[Toshiba Semiconductor]
Part No. 2SA2069
OCR Text ...t gain: hFE = 200 to 500 (IC = -0.15 A) Low collector-emitter saturation voltage: VCE (sat) = -0.14 V (max) High-speed switching: tf = 37 ns...01 -0.1 -1 -10 0 0 Collector current -0.2 -0.4 -0.6 -0.8 IC (A) Collector-emitter vo...
Description High-Speed Switching Applications DC-DC Converter Applications

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    2SA2070

TOSHIBA[Toshiba Semiconductor]
Part No. 2SA2070
OCR Text ...t gain: hFE = 200 to 500 (IC = -0.1 A) Low collector-emitter saturation voltage: VCE (sat) =- 0.20 V (max) High-speed switching: tf = 70 ns ...01 mA IC = -0.3 A, IB = -0.01 mA VCB = -10 V, IE = 0, f = 1 MHz See Figure 1. VCC -30 V, RL = 100 ...
Description TOSHIBA Transistor Silicon PNP Epitaxial Type

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    2SA2071

ROHM[Rohm]
Part No. 2SA2071
OCR Text ...yp. : -200mV at IC = -2A, IB = -0.2A) 3) Strong discharge power for inductive load and capacitance load. 4) Complements the 2SC5824 !Externa...01 100us 1ms 10ms 100ms DC 100 -0.001 -0.1 -1 -10 -100 10 -0.01 -0.1 -1 ...
Description Power transistor (-60V, -3A)
Power transistor (−60V −3A)
Power transistor (−60V, −3A)

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