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  -6.7a Datasheet PDF File

For -6.7a Found Datasheets File :: 11399    Search Time::1.704ms    
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    FS7KM-18 FS7M0680TU FS7M0680YDTU FS7KM-18A

POWEREX[Powerex Power Semiconductors]
Fairchild Semiconductor
Part No. FS7KM-18 FS7M0680TU FS7M0680YDTU FS7KM-18A
OCR Text 6.5 0.3 3 0.3 Dimensions in mm 2.8 0.2 15 0.3 3.2 0.2 14 0.5 3.6 0.3 1.1 0.2 1.1 0.2 0.75 0.15 0.75 0.15 ...7A Viso ................................................................................ 2000V q ...
Description Fairchild Power Switch(FPS)
Nch POWER MOSFET HIGH-SPEED SWITCHING USE

File Size 46.69K  /  4 Page

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    FS7KM-5

MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. FS7KM-5
OCR Text 6.5 0.3 3 0.3 Dimensions in mm 2.8 0.2 15 0.3 3.2 0.2 14 0.5 3.6 0.3 1.1 0.2 1.1 0.2 0.75 0.15 0.75 0.15 ...7A Viso ................................................................................ 2000V q ...
Description HIGH-SPEED SWITCHING USE

File Size 44.05K  /  4 Page

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    GA75TS120U GA75TS120UPBF

IRF[International Rectifier]
Part No. GA75TS120U GA75TS120UPBF
OCR Text ...) Gate Threshold Voltage 3.0 -- 6.0 VCE = 6.0V, IC = 750A -11 -- mV/C VCE = 6.0V, IC = 750A VGE(th)/TJ Temperature Coeff. of Threshold Volta...7A I F = 7 5A I F = 3 7A - (A) IRRM 150 trr - (n s) 120 80 40 VR = 72 0 V T J ...
Description    Ultra-FastTM Speed IGBT
1200V UltraFast 10-30 kHz Half-Bridge IGBT in a INT-A-Pak package
75 A, 1200 V, N-CHANNEL IGBT

File Size 255.15K  /  10 Page

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    IR2110E6

IRF[International Rectifier]
Part No. IR2110E6
OCR Text 6.065 IR2110E6 HIGH AND LOW SIDE DRIVER Features n Floating channel designed for bootstrap operation Fully operational to +600V Tolera...7A. Turn-On Time vs. Temperature Figure 7B. Turn-On Time vs. Voltage 250 250 200 Turn-Of...
Description HIGH AND LOW SIDE DRIVER

File Size 306.76K  /  14 Page

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    IR2110L6

IRF[International Rectifier]
Part No. IR2110L6
OCR Text 6.074 IR2110L6 HIGH AND LOW SIDE DRIVER Features n Floating channel designed for bootstrap operation Fully operational to +600V Tolera...7A. Turn-On Time vs. Temperature Figure 7B. Turn-On Time vs. Voltage 250 250 200 Turn-Of...
Description HIGH AND LOW SIDE DRIVER

File Size 337.18K  /  14 Page

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    IR2110L

IRF[International Rectifier]
Part No. IR2110L
OCR Text 6.085 IR2110L4 HIGH AND LOW SIDE DRIVER Features n Floating channel designed for bootstrap operation Fully operational to +400V Tolera...7A. Turn-On Time vs. Temperature Figure 7B. Turn-On Time vs. Voltage 250 250 200 Turn-Of...
Description HIGH AND LOW SIDE DRIVER

File Size 131.31K  /  14 Page

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    IR2110 IR2110PBF IR2110S IR2110SPBF IR2113PBF IR2113S IR2113SPBF

International Rectifier
Part No. IR2110 IR2110PBF IR2110S IR2110SPBF IR2113PBF IR2113S IR2113SPBF
OCR Text ...S + 25 VCC + 0.3 VDD + 0.3 50 1.6 1.25 75 100 150 150 300 Units V V/ns W C/W C Recommended Operating Conditions The input...7A. Turn-On Time vs. Temperature Figure 7B. Turn-On Time vs. VCC/VBS Supply Voltage 250 250 2...
Description HIGH AND LOW SIDE DRIVER

File Size 218.79K  /  16 Page

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    IRF130SMD

TT electronics Semelab Limited
SEME-LAB[Seme LAB]
Part No. IRF130SMD
OCR Text 6 ) 3 .4 1 (0 .1 3 4 ) 3 .7 0 (0 .1 4 6 ) 3 .4 1 (0 .1 3 4 ) 3 .6 0 (0 .1 4 2 ) M ax. 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) N-CH...7A 44A 45W 0.36W/C -55 to 150C 2.8C/W max. Semelab plc. Telephone +44(0)1455) 556565. Fax +44(...
Description N-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS

File Size 22.36K  /  2 Page

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    IRF3707 IRF3707L IRF3707S IRF3707PBF IRF3707STRL IRF3707STRR

IRF[International Rectifier]
Part No. IRF3707 IRF3707L IRF3707S IRF3707PBF IRF3707STRL IRF3707STRR
OCR Text ...akage --- Typ. --- 0.027 9.0 12.6 --- --- --- --- --- Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA 12....7A BOTTOM 24.8A TOP 400 Fig 14a&b. Basic Gate Charge Test circuit and Waveforms 300 200 ...
Description 30V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
30V Single N-Channel HEXFET Power MOSFET in a TO-262 package
30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=30V Rds(on)max=12.5mohm Id=62A)
Power MOSFET(Vdss=30V, Rds(on)max=12.5mohm, Id=62A)
Power MOSFET(Vdss=30V/ Rds(on)max=12.5mohm/ Id=62A)

File Size 141.65K  /  10 Page

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    IRF3708 IRF3708L IRF3708S

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF3708 IRF3708L IRF3708S
OCR Text ...-- --- Gate Threshold Voltage 0.6 --- Drain-to-Source Leakage Current --- Gate-to-Source Forward Leakage --- Gate-to-Source Reverse Leakage ...7A BOTTOM 24.8A TOP Fig 14a&b. Gate Charge Test Circuit and Waveform 360 240 15V 120 ...
Description Power MOSFET(Vdss=30V, Rds(on)max=12mohm, Id=62A) 功率MOSFET(减振钢板基本\u003d 30V的,的Rdson)最大值\u003d 12mohm,身份证\u003d 62A条)
Power MOSFET(Vdss=30V/ Rds(on)max=12mohm/ Id=62A)

File Size 137.00K  /  10 Page

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