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For unilateral Found Datasheets File :: 366 Search Time::1.312ms
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				http:// AUK[AUK corp]
Part No.	STC918K
OCR Text	...eristic Insertion Gain Maximum unilateral Gain Maximum Stable Gain Maximum Available Gain Noise Figure(Minimum) Noise Resistance Associated Gain at Minimum NF Output Power at 1.0dB Gain Compression Output 3'rd Intercept TC=25C Symbo...
Description	High current transition frequency
File Size	280.59K / 11 Page	View it Online	Download Datasheet

				PHILIPS[Philips Semiconductors] NXP Semiconductors
Part No.	BFG505W BFG505W_X BFG505W/X
OCR Text	...ce transition frequency maximum unilateral power gain insertion power gain noise figure Ts 85 C IC = 5 mA; VCE = 6 V IC = 0; VCB = 6 V; f = 1 MHz open emitter collector-emitter voltage RBE = 0 CONDITIONS CODE N0 N1 Top view Fig.1 Sim...
Description	ECONOLINE: RKZ - Safety standards and approvals: EN 60950 certified, rated for 250VAC (LVD test report)- Custom Solutions Available- 3kVDC & 4kVDC Isolation- UL94V-0 Package Material- Power Sharing on Output- Efficiency to 84% NPN 9 GHz wideband transistors
File Size	148.86K / 16 Page	View it Online	Download Datasheet

				PHILIPS[Philips Semiconductors] NXP Semiconductors
Part No.	BFG505 BFG505_X BFG505/X BFG540/X
OCR Text	...ce transition frequency maximum unilateral power gain Ts 130 C VCE = 6 V; IC = 5 mA VCB = 6 V; IC = ic = 0; f = 1 MHz VCE = 6 V; IC = 5 mA; f = 1 GHz VCE = 6 V; IC = 5 mA; Tamb = 25 C; f = 900 MHz VCE = 6 V; IC = 5 mA; Tamb = 25 C; f = 2 G...
Description	NPN 9 GHz wideband transistors
File Size	159.13K / 16 Page	View it Online	Download Datasheet

				NXP Semiconductors Philips Semiconductors
Part No.	BFR540 BFR54
OCR Text	...ce transition frequency maximum unilateral power gain up to Ts = 70 C; note 1 IC = 40 mA; VCE = 8 V IC = ic = 0; VCB = 8 V; f = 1 MHz IC = 40 mA; VCE = 8 V; f = 1 GHz IC = 40 mA; VCE = 8 V; Tamb = 25 C; f = 900 MHz IC = 40 mA; VCE = 8 V; Ta...
Description	NPN 9 GHz wideband transistor
File Size	101.73K / 16 Page	View it Online	Download Datasheet

				Philips Semiconductors
Part No.	BFG135
OCR Text	...in transition frequency maximum unilateral power gain up to Ts = 145 C (note 1) IC = 100 mA; VCE = 10 V; Tj = 25 C IC = 100 mA; VCE = 10 V; f = 1 GHz; Tamb = 25 C IC = 100 mA; VCE = 10 V; f = 500 MHz; Tamb = 25 C IC = 100 mA; VCE = 10 V; f ...
Description	NPN 7GHz wideband transistor
File Size	101.96K / 12 Page	View it Online	Download Datasheet

				PHILIPS[Philips Semiconductors] NXP Semiconductors N.V.
Part No.	BFG67_XR BFG67 BFG67_X BFG67X BFG67XR BFG67/XR BFG67/X
OCR Text	...ce transition frequency maximum unilateral power gain noise figure Ts 65 C IC = ic = 0; VCB = 8 V; f = 1 MHz IC = 15 mA; VCE = 8 V; f = 500 MHz IC = 15 mA; VCE = 8 V; Tamb = 25 C; f = 1 GHz s = opt; IC = 5 mA; VCE = 8 V; Tamb = 25 C; f = 1...
Description	NPN 8 GHz wideband transistors NPN 8GHz wideband transistor(NPN 8G赫兹宽带晶体
File Size	133.29K / 16 Page	View it Online	Download Datasheet

				Philips Semiconductors
Part No.	BFQ149
OCR Text	...in transition frequency maximum unilateral power gain noise figure up to Ts = 135 C (note 1) IC = -75 mA; VCE = -10 V; f = 500 MHz; Tj = 25 C IC = -50 mA; VCE = -10 V; f = 500 MHz; Tamb = 25 C IC = -50 mA; VCE = -10 V; Rs = 60 ; f = 500 MHz...
Description	PNP 5 GHz wideband transistor
File Size	37.90K / 6 Page	View it Online	Download Datasheet

				MOTOROLA[Motorola, Inc] MOTOROLA[Motorola Inc]
Part No.	MMBR951ALT1 MMBR951LT1 MRF9511LT1 MRF957T1
OCR Text	...C = 30 mA, f = 1.5 GHz) Maximum unilateral Gain (1) (VCE = 8.0 V, IC = 30 mA, f = 1.0 GHz) (VCE = 8.0 V, IC = 30 mA, f = 2.0 GHz) (VCE = 5.0 V, IC = 30 mA, f = 1.5 GHz) Noise Figure -- Minimum (Figure 9) (VCE = 6.0 V, IC = 5.0 mA, f = 1.0 G...
Description	NPN Silicon Low Noise / High-Frequency Transistors NPN Silicon Low Noise High-Frequency Transistors NPN Silicon Low Noise, High-Frequency Transistors
File Size	212.86K / 16 Page	View it Online	Download Datasheet

				MOTOROLA[Motorola, Inc]
Part No.	MRF917T1
OCR Text	..., IC = 5.0 mA) Figure 1 Maximum unilateral Gain (VCE = 6.0 Vdc, IC = 20 mA, f = 1000 MHz) Insertion Gain (VCE = 6.0 Vdc, IC = 20 mA, f = 1000 MHz) Noise Resistance (VCE = 6.0 Vdc, IC = 5.0 mA, f = 1000 MHz) 500 MHz 1.0 GHz 500 MHz 1.0 GHz N...
Description	LOW NOISE HIGH FREQUENCY TRANSISTOR
File Size	252.24K / 12 Page	View it Online	Download Datasheet

				NXP Semiconductors PHILIPS[Philips Semiconductors]
Part No.	BFQ67T
OCR Text	...in transition frequency maximum unilateral power gain noise figure Ts 75 C; note 1 CONDITIONS open emitter open base MIN. - - - - IC = 15 mA; VCE = 5 V; Tj = 25 C 60 IC = 15 mA; VCE = 8 V; f = 2 GHz; - Tamb = 25 C IC = 15 mA; VCE = 8 V; f ...
Description	NPN 8 GHz wideband transistor
File Size	92.66K / 12 Page	View it Online	Download Datasheet

For unilateral Found Datasheets File :: 366 Search Time::1.312ms
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