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ALSC
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| Part No. |
ASM3P2759A
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| OCR Text |
...n: 1% @ 3MHz Available in 6-pin TSOT-23, 8-pin SOIC and 8-pin TSSOP packages.
ASM3P2759A
The ASM3P2759A uses the most efficient and optimized modulation profile approved by the FCC and is implemented by using a proprietary all digital... |
| Description |
The el-EMI-nator? Series for Low-Power
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| File Size |
154.91K /
11 Page |
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it Online |
Download Datasheet
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SamHop Microelectronics...
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| Part No. |
STS8217
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| OCR Text |
...12 6 package outline dimensions tsot 26 ver 1.1 l detail "a" millimeters inches symbols d e 2.692 3.099 2.591 3.000 e1 1.397 1.803 e e1 b 0....8.0 + 0.30 a b b 0.25 + 0.05 r0. 3 5 max r0.3 ko 1.5 + 0.1 bo 3.2 + 0.1 section a-a 3.3 + 0.1 5 max ... |
| Description |
Super high dense cell design for low RDS(ON).
Dual N-Channel Enhancement Mode Field Effect Transistor
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| File Size |
102.73K /
7 Page |
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it Online |
Download Datasheet |
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SamHop Microelectronics
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| Part No. |
STS8215
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| OCR Text |
...11 6 package outline dimensions tsot 26 ver 2.0 l detail "a" millimeters inches symbols d e 2.692 3.099 2.591 3.000 e1 1.397 1.803 e e1 b 0....8.0 + 0.30 a b b 0.25 + 0.05 r0. 3 5 max r0.3 ko 1.5 + 0.1 bo 3.2 + 0.1 section a-a 3.3 + 0.1 5 max ... |
| Description |
Dual N-Channel Enhancement Mode Field Effect Transistor
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| File Size |
103.65K /
7 Page |
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it Online |
Download Datasheet |
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SamHop Microelectronics...
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| Part No. |
STS8213
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| OCR Text |
...effect transistor green product tsot 26 top view s1 d1/d2 s2 g1 d1/d2 g2 1 2 3 6 5 4 22.0 @ vgs=2.5v 16.0 @ vgs=4.0v 16.5 @ vgs...8 ns t f ns gate-drain charge v ds =10v,v gs =0v switching characteristics gate-source char... |
| Description |
Super high dense cell design for low RDS(ON).
Dual N-Channel Enhancement Mode Field Effect Transistor
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| File Size |
108.35K /
7 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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