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For rectifier- Found Datasheets File :: 37381 Search Time::1.766ms
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				IRF[International Rectifier]
Part No.	IRF1010N
OCR Text	...ower MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MO...
Description	Power MOSFET(Vdss=55V, Rds(on)=11mohm, Id=85A?) Power MOSFET(Vdss=55V, Rds(on)=11mohm, Id=85A)
File Size	154.40K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF1104
OCR Text	...tion HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MO...
Description	Power MOSFET(Vdss=40V/ Rds(on)=0.009ohm/ Id=100A) Power MOSFET(Vdss=40V, Rds(on)=0.009ohm, Id=100A?) Power MOSFET(Vdss=40V, Rds(on)=0.009ohm, Id=100A?? Power MOSFET(Vdss=40V, Rds(on)=0.009ohm, Id=100A) Power MOSFET(Vdss=40V, Rds(on)=0.009ohm, Id=100A?
File Size	97.26K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF1302L IRF1302S
OCR Text	... EMBLY LINE "L" INT ERNAT IONAL RECTIFIER LOGO AS S EMBLY LOT CODE PART NUMBER F530S DAT E CODE YEAR 0 = 2000 WEEK 02 LINE L www.irf.com 9 IRF1302S/IRF1302L TO-262 Package Outline TO-262 Part Marking Information EXAMPLE: T HIS...
Description	Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=174A? Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=174A?) Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=174A) Power MOSFET(Vdss=20V/ Rds(on)=4.0mohm/ Id=174A)
File Size	225.99K / 11 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF1310NL IRF1310NS
OCR Text	...tion HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MO...
Description	Power MOSFET(Vdss=100V, Rds(on)=0.036ohm, Id=42A)
File Size	152.94K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF1310N
OCR Text	...tion HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MO...
Description	Power MOSFET(Vdss=100V/ Rds(on)=0.036ohm/ Id=42A) Power MOSFET(Vdss=100V, Rds(on)=0.036ohm, Id=42A)
File Size	92.91K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF1310S
OCR Text	...tion HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Po...
Description	Power MOSFET(Vdss=100V, Rds(on)=0.04ohm, Id=41A)
File Size	319.11K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF1404L IRF1404S
OCR Text	...ower MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MO...
Description	Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=162A?) Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=162A)
File Size	237.30K / 10 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF1404
OCR Text	...ower MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MO...
Description	Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=162A? Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=162A?) Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=162A) Power MOSFET(Vdss=40V/ Rds(on)=0.004ohm/ Id=162A)
File Size	105.33K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier] International Rectifier, Corp.
Part No.	IRF1407L IRF1407S IRF1407STRR
OCR Text	...r MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MO...
Description	75V Single N-Channel HEXFET Power MOSFET in a TO-262 package Power MOSFET(Vdss = 75V, Rds(on) = 0.0078з, Id = 100A?) Power MOSFET(Vdss = 75V, Rds(on) = 0.0078, Id = 100A) Power MOSFET(Vdss = 75V/ Rds(on) = 0.0078/ Id = 100A) TRANSISTOR \| MOSFET \| N-CHANNEL \| 75V V(BR)DSS \| 100A I(D) \| TO-263AB 晶体管\| MOSFET的\| N沟道\| 75V的五（巴西）直\| 100号A（丁）\|63AB
File Size	158.12K / 11 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF1704
OCR Text	...logy leadership of Internationl Rectifier provides 200C operating temperature in a plastic package. At high ambient temperatures, the IRF1704 can carry up to 20% more current than similar 175 C Tj max devices in the same package outline. Th...
Description	Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=170A? Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=170A?? Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=170A) POWER MOSFET(VDSS=40V, RDS(ON)=0.004OHM, ID=170Aㄌ) Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=170A?) Power MOSFET(Vdss=40V/ Rds(on)=0.004ohm/ Id=170A)
File Size	100.05K / 8 Page	View it Online	Download Datasheet

For rectifier- Found Datasheets File :: 37381 Search Time::1.766ms
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