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  cmos-level Datasheet PDF File

For cmos-level Found Datasheets File :: 70715    Search Time::1.563ms    
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    5962F0151701QXA 5962F0151701QXC 5962F0151701QXX 5962F0151701QYA 5962F0151701QYC 5962F0151701QYX 5962F0151701VXA 5962F015

Aeroflex Circuit Technology
Part No. 5962F0151701QXA 5962F0151701QXC 5962F0151701QXX 5962F0151701QYA 5962F0151701QYC 5962F0151701QYX 5962F0151701VXA 5962F0151701VXC 5962F0151701VXX 5962F0151701VYA 5962F0151701VYC 5962F0151701VYX 5962G0151701QXA 5962G0151701QXX 5962G0151701QXC 5962G0151701QYA 5962G0151701QYC 5962G0151701QYX 5962G0151701VXA 5962G0151701VYA 5962G0151701VYC 5962G0151701VYX 5962H0151701QXA 5962H0151701QXC 5962H0151701QYA 5962H0151701QYC 5962H0151701QYX UT28F256LVC-65UPX UT28F256LVC-65PPX
OCR Text ...d radiation-hardened twin-well cmos process technology is used to implement the ut28f256lv. the combination of radiation-hardness, fast a...level input voltage 0.7v dd v v il low-level input voltage 0.25v dd v v ol1 low-level output vol...
Description Radiation-hardenet 32K x 8 PROM: SMD. Class Q. 65ns acces time. Lead finish solder. Total dose 3E5 rads(Si).
Radiation-hardenet 32K x 8 PROM: SMD. Class Q. 65ns acces time. Lead finish gold. Total dose 3E5 rads(Si).
Radiation-hardenet 32K x 8 PROM: SMD. Class Q. 65ns acces time. Lead finish optional. Total dose 3E5 rads(Si).
Radiation-hardenet 32K x 8 PROM: SMD. Class V. 65ns acces time. Lead finish solder. Total dose 3E5 rads(Si).
Radiation-hardenet 32K x 8 PROM: SMD. Class V. 65ns acces time. Lead finish gold. Total dose 3E5 rads(Si).
Radiation-hardenet 32K x 8 PROM: SMD. Class V. 65ns acces time. Lead finish optional. Total dose 3E5 rads(Si).
Radiation-hardenet 32K x 8 PROM: SMD. Class Q. 65ns acces time. Lead finish solder. Total dose 5E5 rads(Si).
Radiation-hardenet 32K x 8 PROM: SMD. Class Q. 65ns acces time. Lead finish optional. Total dose 5E5 rads(Si).
Radiation-hardenet 32K x 8 PROM: SMD. Class Q. 65ns acces time. Lead finish gold. Total dose 5E5 rads(Si).
Radiation-hardenet 32K x 8 PROM: SMD. Class V. 65ns acces time. Lead finish solder. Total dose 5E5 rads(Si).
Radiation-hardenet 32K x 8 PROM: SMD. Class V. 65ns acces time. Lead finish gold. Total dose 5E5 rads(Si).
Radiation-hardenet 32K x 8 PROM: SMD. Class V. 65ns acces time. Lead finish optional. Total dose 5E5 rads(Si).
Radiation-hardenet 32K x 8 PROM: SMD. Class Q. 65ns acces time. Lead finish solder. Total dose 1E6 rads(Si).
Radiation-hardenet 32K x 8 PROM: SMD. Class Q. 65ns acces time. Lead finish gold. Total dose 1E6 rads(Si).
Radiation-hardenet 32K x 8 PROM: SMD. Class Q. 65ns acces time. Lead finish optional. Total dose 1E6 rads(Si).
Radiation-hardenet 32K x 8 PROM. 65ns acces time. Lead finish optional.

File Size 67.34K  /  11 Page

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    INTEGRATED DEVICE TECHNOLOGY INC
Part No. ICS671G-05ILF
OCR Text ...s ? low jitter (<200 ps) ? full cmos outputs with 25ma output drive capability at ttl levels ? 5v tolerant fbin and clkin pins ? tri-state mode for board-level testing ? advanced, low power, sub-micron cmos process ? operating voltage of 3...
Description PLL BASED CLOCK DRIVER, 8 TRUE OUTPUT(S), 0 INVERTED OUTPUT(S), PDSO16

File Size 117.67K  /  7 Page

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Part No. K3N5U1000D-DC15
OCR Text cmos mask rom pin name pin function a 0 - a 19 address inputs q 0 - q 14 data outputs q 15 /a -1 output 15(word mode)/ lsb address(byte m...level.(see mode selection table) this device operates with 3.0v or 3.3v power supply, and all inputs...
Description 1M X 16 MASK PROM, 150 ns, PDIP42

File Size 97.83K  /  4 Page

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Part No. K3N6U4000C-DC15
OCR Text cmos mask rom pin name pin function a 0 - a 20 address inputs q 0 - q 15 data outputs ce chip enable oe output enable v cc power v ss gro...level may undershoot to -2.0v for periods <20ns. maximum dc voltage on input pins(v ih ) is v cc +0...
Description 2M X 16 MASK PROM, 150 ns, PDIP42

File Size 75.36K  /  4 Page

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