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Microsemi, Corp.
Fairchild Semiconductor, Corp.
FAIRCHILD SEMICONDUCTOR CORP
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| Part No. |
bd13510S BD13916STU bd13516S
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| OCR Text |
bd135/137/139 1 to-126 npn epitaxial silicon transistor absolute maximum ratings t c =25 c unless otherwise noted electrical characteristics t c =25 c unless otherwise noted h fe classification symbol parameter value units v cbo co... |
| Description |
NPN Epitaxial Silicon Transistor; Package: TO-126; No of Pins: 3; Container: Bulk 1.5 A, 45 V, NPN, Si, POWER TRANSISTOR, TO-126
NPN Epitaxial Silicon Transistor; Package: TO-126; No of Pins: 3; Container: Rail 1.5 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-126
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| File Size |
132.44K /
10 Page |
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Comset Semiconductors
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| Part No. |
BD140 BD138
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| OCR Text |
...c package. npn complements are bd135-bd137-bd139. compliance to rohs. absolute maximum ratings symbol ratings value unit -v cbo collector-base voltage (i e = 0) bd135 45 v bd137 60 bd139 100 -v ceo collector-emitter vol... |
| Description |
(BD136 - BD140) SILICON PLANAR EPITAXIAL POWER TRANSISTORS
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| File Size |
120.53K /
3 Page |
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Download Datasheet |
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Fairchild Semiconductor, Corp.
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| Part No. |
BD13810S
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| OCR Text |
...g applications complement to bd135, bd137 and bd139 respectively 1 to-126 1. emitter 2.collector 3.base
?2000 fairchild semiconductor international bd136/138/140 rev. a, february 2000 typical characteristics figure 1. dc current ... |
| Description |
PNP Epitaxial Silicon Transistor; Package: TO-126; No of Pins: 3; Container: Bulk 1.5 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-126
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| File Size |
132.89K /
10 Page |
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it Online |
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HIROSE ELECTRIC Co., Ltd.
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| Part No. |
BD139-25 bd135-25 BD137-25
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| OCR Text |
bd135, 137, 139 npn plastic power transistors complementary bd136, 138, 140 medium power linear and switching applications absolute maximum ratings absolute maximum ratings absolute maximum ratings absolute maximum ratings absolute ... |
| Description |
Triac; Thyristor Type:Sensitive Gate; Peak Repetitive Off-State Voltage, Vdrm:400V; On State RMS Current, IT(rms):800mA; Gate Trigger Current (QI), Igt:5mA; Current, It av:0.8A; Leaded Process Compatible:Yes RoHS Compliant: Yes
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 1.5A I(C) | TO-126
Diac Thyristor; Leaded Process Compatible:Yes; Mounting Type:Through Hole; Package/Case:Axial Leaded; Peak Surge Current:2A; Breakover Voltage Min:30V RoHS Compliant: Yes 晶体管|晶体管|叩| 45V的五（巴西）总裁| 1.5AI（丙）|126
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| File Size |
35.46K /
3 Page |
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it Online |
Download Datasheet |
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