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  8m-bit Datasheet PDF File

For 8m-bit Found Datasheets File :: 2878    Search Time::2.578ms    
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    WED7F2328XDNSN100C WED7F2328XDNSN120C WED7F2328XDNSN150C WED7F328XDNSN100C WED7F328XDNSN120C WED7F328XDNSN150C WED7F2328

WEDC[White Electronic Designs Corporation]
Part No. WED7F2328XDNSN100C WED7F2328XDNSN120C WED7F2328XDNSN150C WED7F328XDNSN100C WED7F328XDNSN120C WED7F328XDNSN150C WED7F2328XDNSNB100C EDI7F2328XDNSN EDI7F328XDNSN
OCR Text 8M x 32 / 2 x 8Mx 32; INTEL J3 BASED, FLASH FEATURES 8M x 32 and 2 x 8M x 32 Densities Based on Intel's Strataflash (J3) family of Flash D...bit Protection Register; * 64 bit Unique Device Identifier * 64 bit User Programmable OTP Cells Comm...
Description 8M x 32 / 2 x 8Mx 32 INTEL J3 BASED, FLASH

File Size 92.69K  /  3 Page

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    Macronix International Co., Ltd.
Part No. 27C8100-12
OCR Text ...ion the mx27c8100 is a 5v only, 8m-bit, one time program- mable read only memory. it is organized as 1m x 8 or 512k x 16, operates from a single + 5 volt supply, has a static standby mode, and features fast single address location progra...
Description 8m-bit [1M x8/512K x16] CMOS OTP ROM 800万位[100万x8/512K x16]检察官办公室的CMOS光盘

File Size 528.07K  /  15 Page

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    NEC, Corp.
Part No. PD23C128000L
OCR Text ...16m-word by 8-bit (byte mode) / 8m-word by 16-bit (word mode) document no. m13644ej1v0ds00 (1st edition) date published august 1998 ns cp (k) printed in japan preliminary data sheet the mark ? ? ? ? shows major revised points. descripti...
Description 128m-bit Mask-Programmable ROM(128M位掩膜可选ROM) 128M的位掩码,可编程ROM28兆位掩膜可选光盘)

File Size 94.32K  /  16 Page

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    NEC, Corp.
Part No. PD23C128040L
OCR Text ...16m-word by 8-bit (byte mode) / 8m-word by 16-bit (word mode) page access mode document no. m13643ej1v0ds00 (1st edition) date published august 1998 ns cp (k) printed in japan preliminary data sheet the mark ? ? ? ? shows major revised...
Description 128M Bits Mask-Programmable ROM.(128M位掩膜可选ROM) 128兆位掩模可编程ROM中。(128兆位掩膜可选光盘)

File Size 99.49K  /  16 Page

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    MX23C8000 MX23C8000MC-10 MX23C8000MC-12 MX23C8000MC-15 MX23C8000MC-20 MX23C8000PC-10 MX23C8000PC-12 MX23C8000PC-15 MX23C

Macronix International Co., Ltd.
Part No. MX23C8000 MX23C8000MC-10 MX23C8000MC-12 MX23C8000MC-15 MX23C8000MC-20 MX23C8000PC-10 MX23C8000PC-12 MX23C8000PC-15 MX23C8000PC-20 MX23C8000QC-10 MX23C8000QC-12 MX23C8000QC-15 MX23C8000QC-20 MX23C8000TC-10 MX23C8000TC-12 MX23C8000TC-15 MX23C8000TC-20
OCR Text 8m-bit [1M x 8] CMOS MASK ROM FEATURES * * * * * 1M x 8 organization Single +5V power supply Fast access time : 100/120/150/200ns Totally static operation Completely TTL compatible * Operating current : 40mA * Standby current : 100uA * Pa...
Description 8m-bit [1M x 8] CMOS MASK ROM 1M X 8 MASK PROM, 150 ns, PDIP32
8m-bit [1M x 8] CMOS MASK ROM 1M X 8 MASK PROM, 120 ns, PDIP32
8m-bit [1M x 8] CMOS MASK ROM 1M X 8 MASK PROM, 200 ns, PQCC32
8m-bit [1M x 8] CMOS MASK ROM 1M X 8 MASK PROM, 100 ns, PQCC32
8m-bit [1M x 8] CMOS MASK ROM 1M X 8 MASK PROM, 120 ns, PQCC32

File Size 904.73K  /  10 Page

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    Avago Technologies, Ltd.
Part No. EDI7F2328XDNSN
OCR Text 8m x 32 respectively. the modules are based on intel's e28f640j3, 8m x 8 / 4m x 16 device family. both modules offer access times of 120-1...bit protection register; 64 bit unique device identifier 64 bit user programmable otp cells common f...
Description 4MHz, BiMOS Operational Amplifier with MOSFET Input/CMOS Output; Temperature Range: -55&deg;C to 125&deg;C; Package: 8-PDIP 英特夏普闪存模块

File Size 32.17K  /  2 Page

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    Cypress Semiconductor, Corp.
CYPRESS SEMICONDUCTOR CORP
Part No. CY7C1515AV18-200BZXI CY7C1526AV18-278BZXC CY7C1526AV18-250BZI CY7C1526AV18-300BZI CY7C1526AV18-250BZXI
OCR Text ...t configurations cy7c1511av18 ? 8m x 8 cy7c1526av18 ? 8m x 9 cy7c1513av18 ? 4m x 18 cy7c1515av18 ? 2m x 36 functional description the cy7c15...bit words (cy7c1511av18), 9-bit words (cy7c1526av18), 18-bit words (cy7c1513av18), or 36-bit words (...
Description 72-Mbit QDR(TM)-II SRAM 4-Word Burst Architecture; Architecture: QDR-II, 4 Word Burst; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 1.7 to 1.9 V 2M X 36 QDR SRAM, 0.45 ns, PBGA165
8M X 9 QDR SRAM, 0.45 ns, PBGA165

File Size 485.08K  /  31 Page

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    SHARP
Part No. LH28F800SUT-70
OCR Text 8m (512k 16, 1m 8) flash memory figure 1. tsop reverse bend configuration features ? user-configurable x8 or x16 operation ? user-selecta...bit) block erasable non-volatile random access memory organized as either 512k 16 or 1m 8. the lh2...
Description 8M (512K 16, 1M 8) Flash Memory

File Size 363.12K  /  38 Page

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    SIEMENS AG
Part No. HYS64V16220GCDL HYS64V4220GCDL HYS64V8220GCDL
OCR Text ...-parity organization ? two bank 8m 64 and 16m 64 non-parity module organization ? suitable for use in pc100 and pc133 applications ? aut...bit) v cc v ss c 1 - c 4 d0-d3 d0-d3 note: all resistors are 10 w ldqm we we dqmb1 dq8-dq15 dq8-dq1...
Description 3.3V SDRAM Modules(3.3V SDRAM 模块) 3.3V的内存模块(3.3V的内存模块)

File Size 136.94K  /  18 Page

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    HM5225325F-B60 HM5225645F HM5225645F-B60

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HITACHI[Hitachi Semiconductor]
Hitachi,Ltd.
Part No. HM5225325F-B60 HM5225645F HM5225645F-B60
OCR Text ...CAS WE CLK CKE 64-Mbit SDRAM 8M x 8 64-Mbit SDRAM 8M x 8 64-Mbit SDRAM 8M x 8 64-Mbit SDRAM 8M x 8 DQMB 0 to DQMB 3 32 DQ 0 to DQ 31 4 1 8 1 8 1 8 1 8 7 HM5225645F-B60, HM5225325F-B60 Power-u...
Description 256M LVTTL interface SDRAM 100 MHz 1-Mword x 64-bit x 4-bank/2-Mword x 32-bit x 4-bank PC/100 SDRAM

File Size 76.58K  /  16 Page

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