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IRF[International Rectifier]
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| Part No. |
IRG4PH40KD
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| OCR Text |
...= 25C ns 96 140 IC = 15A, VCC = 800v 220 330 VGE = 15V, RG = 10 1.31 -- Energy losses include "tail" 1.12 -- mJ and diode reverse recovery 2.43 2.8 See Fig. 9,10,18 -- -- s VCC = 720V, TJ = 125C VGE = 15V, RG = 10 , VCPK < 500V 49 -- TJ = 1... |
| Description |
1200V UltraFast 4-20 kHz Copack IGBT in a TO-247AC package
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V Vce(on)typ.=2.47V @Vge=15V Ic=15A)
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=2.47V, @Vge=15V, Ic=15A)
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| File Size |
214.26K /
10 Page |
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it Online |
Download Datasheet
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SIEMENS AG
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| Part No. |
SGB15N120
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| OCR Text |
...g energy e ts t j =25 c, v cc =800v, i c =15a, v ge =15v/0v, r g =33 ? , energy losses include ?tail? and diode reverse recovery. -1.92.6 mj switching characteristic, inductive load, at t j =150 c value parameter symbol conditions min... |
| Description |
Fast S-IGBT in NPT-technology( NPT技术中的快S-IGBT) 快速的S -不扩散核武器条约IGBT的技术（不扩散技术中的快速第S - IGBT的）
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| File Size |
415.74K /
12 Page |
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it Online |
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Infineon Technologies A...
INFINEON[Infineon Technologies AG]
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| Part No. |
Q67040-S4274 Q67040-S4276 Q67040-S4275 SGW15N120 SGB15N120 SGP15N120
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| OCR Text |
...uency (Tj 150C, D = 0.5, VCE = 800v, VGE = +15V/0V, RG = 33)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0, TC = 2...15A 10A 5A 0A 25C
50C
75C
100C
125C
IC, COLLECTOR CURRENT
Ptot, POWER DISSIPATION
... |
| Description |
Fast S-IGBT in NPT-Technology
Fast IGBT in NPT-technology 在不扩散核武器条约快速IGBT技
IGBTs & DuoPacks - 15A 1200V TO220AB IGBT
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| File Size |
448.47K /
12 Page |
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it Online |
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Infineon Technologies AG
Infineon Technologies A...
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| Part No. |
SKW15N12008
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| OCR Text |
...uency (Tj 150C, D = 0.5, VCE = 800v, VGE = +15V/0V, RG = 33)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0, TC = 2...15A 10A 5A 0A 25C
IC, COLLECTOR CURRENT
Ptot,
POWER DISSIPATION
50C
75C
100C
12... |
| Description |
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
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| File Size |
342.85K /
13 Page |
View
it Online |
Download Datasheet |
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Infineon
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| Part No. |
SGW15N120
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| OCR Text |
...uency (Tj 150C, D = 0.5, VCE = 800v, VGE = +15V/0V, RG = 33)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0, TC = 2...15A 10A 5A 0A 25C
50C
75C
100C
125C
IC, COLLECTOR CURRENT
Ptot,
POWER DISSIPATI... |
| Description |
TRANSISTOR,IGBT,N-CHAN,1.2KV V(BR)CES,32A I(C),TO-247AC
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| File Size |
341.89K /
12 Page |
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it Online |
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