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TY Semiconductor Co., Ltd
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| Part No. |
AOK20B135D1
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| OCR Text |
... tube 240 turn off soa, v ce 600v, limited by t jmax pulsed collector current, limited by t jmax maximum diode junction-to-case c/w 0.44 ...20a v ce =0v, v ge =20v forward transconductance v ce(sat) i c =1ma, v ge =0v, t j =25c v ge =15v, i... |
| Description |
Latest AlphaIGBT (a IGBT) technology
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| File Size |
911.74K /
8 Page |
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it Online |
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Infineon Technologies
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| Part No. |
H30T90
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| OCR Text |
...gy e ts t j =25 c, v cc =600v, i c =30a, v ge =0/15v, r g =15 , - 1.8 - mj switching characteristic, inductive load, at t ...20a 40a 60a 80a t c =110c t c =80c i c , collector current 1v 10v 100v 1000v 1a 10a dc 10s t p =1... |
| Description |
IGBT
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| File Size |
285.54K /
12 Page |
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it Online |
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Infineon Technologies
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| Part No. |
H30T100
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| OCR Text |
...gy e ts t j =25 c, v cc =600v, i c =30a, v ge =0/15v, r g =15 , energy losses include ?tail? and diode reverse recovery. - - -...20a 30a 40a 50a 60a 70a 80a 90a t c =110c t c =80c i c , collector current 1v 10v 100v 1000v 0.1a... |
| Description |
IGBT
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| File Size |
335.78K /
12 Page |
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it Online |
Download Datasheet |
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Micross Components
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| Part No. |
ICE20N170
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| OCR Text |
... 20a max v (br)dss i d = 250ua 600v min r ds(on) v gs = 10v 0.17? typ q g v ds = 480v 62nc typ micross components ltd, united kingdom, te...20a, r g = 4? (external) t r rise time - 3.5 - t d(of ) turn-of delay time - 55 - t f fall time - ... |
| Description |
N-Channel Enhancement Mode MOSFET
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| File Size |
753.80K /
4 Page |
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it Online |
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Micross Components
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| Part No. |
ICE20N170U
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| OCR Text |
... 20a max v (br)dss i d = 250ua 600v min r ds(on) v gs = 10v 0.17? typ q g v ds = 480v 62nc typ micross components ltd, united kingdom, te...20a, r g = 4? (external) t r rise time - 3.5 - t d(of ) turn-of delay time - 55 - t f fall time - ... |
| Description |
N-Channel Enhancement Mode MOSFET
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| File Size |
755.00K /
4 Page |
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it Online |
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Micross Components
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| Part No. |
ICE20N170FP
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| OCR Text |
... 20a max v (br)dss i d = 250ua 600v min r ds(on) v gs = 10v 0.17? typ q g v ds = 480v 62nc typ micross components ltd, united kingdom, te...20a, v gs = 10v q gd gate to drain charge - 23 - q g gate charge total - 62 - v plateau gate platea... |
| Description |
N-Channel Enhancement Mode MOSFET
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| File Size |
1,005.27K /
4 Page |
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it Online |
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FAIRCHILD SEMICONDUCTOR CORP
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| Part No. |
FGA20S120M
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| OCR Text |
...(on) turn-on delay time v cc = 600v, i c = 20a, r g = 10 , v ge = 15v, resistive load, t c = 25 o c - 43 - ns t r rise time - 176 - ns t d(off) turn-off delay time - 310 - ns t f fall time - 320 480 ns e on turn-on switching loss - ... |
| Description |
40 A, 1200 V, N-CHANNEL IGBT
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| File Size |
780.37K /
8 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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