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  400v 10a Datasheet PDF File

For 400v 10a Found Datasheets File :: 1920    Search Time::1.297ms    
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    IRF[International Rectifier]
Part No. IRGSL6B60KD IRGB6B60KDPBF IRGS6B60KD
OCR Text ...ions --- IC = 5.0A --- nC VCC = 400v CT1 --- VGE = 15V CT4 210 J IC = 5.0A, VCC = 400v 245 VGE = 15V,R G = 100, L =1.4mH 455 Ls = 150nH TJ =...10a 12 10 8 6 4 2 0 5 10 VGE (V) 15 20 5 10 VGE (V) 15 20 ICE = 3.0A ICE = 5.0A ICE = 10a 12 10 8...
Description INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

File Size 304.14K  /  15 Page

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    SGP20N60HS SGW20N60HS

INFINEON[Infineon Technologies AG]
Part No. SGP20N60HS SGW20N60HS
OCR Text ...uency (Tj 150C, D = 0.5, VCE = 400v, VGE = 0/+15V, RG = 16) VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0, TC = 25...10a 0A 25C 75C 125C TC, CASE TEMPERATURE Figure 3. Power dissipation as a function of ca...
Description High Speed IGBT in NPT-technology

File Size 429.45K  /  12 Page

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    SKW20N60 Q67040-S4242

INFINEON[Infineon Technologies AG]
Part No. SKW20N60 Q67040-S4242
OCR Text ...uency (Tj 150C, D = 0.5, VCE = 400v, VGE = 0/+15V, RG = 16) VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0, TC = 25...10a 0A 25C 50C 75C 100C 125C TC, CASE TEMPERATURE Figure 3. Power dissipation as a...
Description Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

File Size 272.85K  /  14 Page

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    KSC2751 KSC2751RTU

Fairchild Semiconductor
Part No. KSC2751 KSC2751RTU
OCR Text ...C= 125C, L = 180H,Clamped VCB = 400v, IE = 0 VCE = 400v, RBE = 50 @ TC = 125C VCE = 400v, VBE(off) = -1.5V VCE = 400v, VBE(off) = -1.5V @ TC...10a IC = 10a, IB = 2A IC = 10a, IB = 2A VCC = 150V, IC = 10a IB1 = -IB2 = 2A RL = 15 15 10 7 35 Min ...
Description NPN Epitaxial Silicon Transistor
High Speed High Current Switching Industrial Use

File Size 54.67K  /  5 Page

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    INFINEON[Infineon Technologies AG]
Part No. SKW30N60HS Q67040-S4503
OCR Text ...uency (Tj 150C, D = 0.5, VCE = 400v, VGE = 0/+15V, RG = 11) VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0, TC = 25...10a 0W 2 5 C 0A 25C 75C 125C TC, CASE TEMPERATURE Figure 3. Power dissipation as a fu...
Description From old datasheet system
HIGH SPEED IGBT IN NPT-TECHNOLOGY

File Size 433.86K  /  14 Page

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    FGH20N60SFD

Fairchild Semiconductor
Part No. FGH20N60SFD
OCR Text ...(on) turn-on delay time v cc = 400v, i c = 20a, r g = 10 ? , v ge = 15v, inductive load, t c = 25 o c -13- ns t r rise time - 16 - ns...10a t c = 25 o c- 1.9 2.5 v t c = 125 o c- 1.7 - t rr diode reverse recovery time i es =10a, di e...
Description 600V, 20A, Field Stop IGBT

File Size 271.75K  /  9 Page

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    INFINEON[Infineon Technologies AG]
Part No. IKW20N60T IKP20N60T IKB20N60T
OCR Text ... 260 V s W C VGE = 15V, VCC 400v, Tj 150C Power dissipation TC = 25C Operating junction temperature Storage temperature Soldering tempe...10a 0A 10H z T C =80C T C =110C 10s IC, COLLECTOR CURRENT IC, COLLECTOR CURRENT 10a 50s ...
Description 600V & 1200V IGBT for frequencies up to 10kHz for hard switching and up to 30kHz for soft switching with antiparallel diode. ...
IGBT in Trench and Fieldstop technology with soft/fast recovery anti-parallel EmCon HE diode
IGBT in Trench and Fieldstop technology with soft,fast recovery anti-parallel EmCon HE diode

File Size 431.57K  /  15 Page

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For 400v 10a Found Datasheets File :: 1920    Search Time::1.297ms    
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