30V Single N-Channel HEXFET Power MOSFET in a D2-Pak package 30V Single N-Channel HEXFET Power MOSFET in a TO-262 package 30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package Power MOSFET(Vdss=30V Rds(on)max=12.5mohm Id=62A) Power MOSFET(Vdss=30V, Rds(on)max=12.5mohm, Id=62A) Power MOSFET(Vdss=30V/ Rds(on)max=12.5mohm/ Id=62A)
..., VGS = 0V, TJ = 150C 100 VGS = 20v nA -100 VGS = -20v 180 ID = -38a 32 nC VDS = -44V 86 VGS = -10V, See Fig. 6 and 13 --- VDD = -28V --- I...8a VDS = - 44V VDS = - 28V
16
C , C a p a c ita n c e (p F )
5000
C is s
4000
12
...
Description
Power MOSFET(Vdss=-55V, Rds(on)=0.02ohm, Id=-74A) 功率MOSFET(减振钢板基本\u003d- 55V的,的Rds(on)\u003d 0.02ohm,身份证\u003d- 74A条) Power MOSFET(Vdss=-55V/ Rds(on)=0.02ohm/ Id=-74A) -55V Single P-Channel HEXFET Power MOSFET in a D2-Pak package -55V Single P-Channel HEXFET Power MOSFET in a TO-262 package
...VGS = 0V, T J = 150C 100 V GS = 20v nA -100 VGS = -20v 180 ID = -38a 32 nC VDS = -44V 86 V GS = -10V, See Fig. 6 and 13 --- VDD = -28V --- ...8a VDS = - 44V VDS = - 28V
16
C , C a p a c ita n c e (p F )
5000
C is s
4000
12
...
Description
Power MOSFET(Vdss=-55V, Rds(on)=0.02ohm, Id=-74A) 功率MOSFET(减振钢板基本\u003d- 55V的,的Rds(on)\u003d 0.02ohm,身份证\u003d- 74A条) -55V Single P-Channel HEXFET Power MOSFET in a TO-220AB package
...ID 3.6A 5.1A 8.0A
800
RG
20v tp
D .U .T
IA S
+ V - DD
A
600
0 .0 1
Fig 12a. Unclamped Inductive Test Circuit
V (B R )D SS tp
400
200
0 25 50 75 100 125 150
Starting TJ , Junction Temperature ( C)
IAS
...
...ID 3.6A 5.1A 8.0A
800
RG
20v tp
D .U .T
IA S
+ V - DD
A
600
0 .0 1
Fig 12a. Unclamped Inductive Test Circuit
V (B R )D SS tp
400
200
0 25 50 75 100 125 150
Starting TJ , Junction Temperature ( C)
IAS
...
Description
Power MOSFET(Vdss=500V/ Rds(on)max=0.85ohm/ Id=8.0A) Power MOSFET(Vdss=500V, Rds(on)max=0.85ohm, Id=8.0A) Power MOSFET(Vdss=500V Rds(on)max=0.85ohm Id=8.0A)
P-Channel Power MOSFET For HI-REL Application(Vdss:-100V,Id(cont):-8a,Rds(on):0.35Ω)(P沟道功率MOS场效应管,HI-REL应用(Vdss:-100V,Id(cont):-8a,Rds(on):0.35Ω)) P-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS
... VGS = 0V, T J = 150C 100 VGS = 20v nA -100 VGS = -20v 27 ID = -4.0A 5.0 nC VDS = -80V 15 VGS = -10V, See Fig. 6 and 13 --- VDD = -50V --- ...8a BOTTOM -4.0A TOP
300
-2 0 V
tp
0 .0 1
200
15V
100
Fig 12a. Unclamped Indu...
Description
Power MOSFET(Vdss=-100V/ Rds(on)=0.48ohm/ Id=-6.8a) Power MOSFET(Vdss=-100V, Rds(on)=0.48ohm, Id=-6.8a) Power MOSFET(Vdss=-100V Rds(on)=0.48ohm Id=-6.8a)