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MSK[M.S. Kennedy Corporation]
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| Part No. |
MSK645B MSK645
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| OCR Text |
...cted to the base of the cascode transistor in the equivalent schematic. The purpose of the cascode transistor is to isolate the input transistor from the high voltage supply. The input transistor must have a very high transition frequency s... |
| Description |
HIGH PERFORMANCE, HIGH VOLTAGE VIDEO DISPLAY DRIVER
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| File Size |
215.24K /
6 Page |
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it Online |
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Mosel Vitelic Corp
MOSEL[Mosel Vitelic, Corp]
Mosel Vitelic, Corp.
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| Part No. |
MSS0271
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| OCR Text |
...her buzzer or speaker without a transistor. Built-in Oscillating Resistor. Single section, 2.79 seconds (4380h). Speech with mute (behind) is up to 21.1 seconds (20000h). Repeat function that can repeat up to 8 times. To turn on LED in sink... |
| Description |
2.7 VOICE ROM
Cap-Free, NMOS, 150mA Low Dropout Regulator with Reverse Current Protection
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| File Size |
60.19K /
12 Page |
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it Online |
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ZARLINK[Zarlink Semiconductor Inc]
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| Part No. |
MT91610AQ MT91610
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| OCR Text |
...rive (Output). Controls the Tip transistor. Connects 330nF cap to GND. Tip Feed (Output). Connects to the Tip transistor and to TIP via the Tip feed resistor. No Connection. Left open. Tip. Connects to the TIP lead of the telephone line. Re... |
| Description |
Short loop Subscriber Line Interface Circuit (SLIC) with 2-4 wire conversion, Programmable line impedance, ringing amplification and On-hook transmission for DID
Programmable Ringing SLIC
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| File Size |
251.31K /
20 Page |
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it Online |
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Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
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| Part No. |
MTB23P06E MTB23P06
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| OCR Text |
...
(c)Motorola TMOS Power MOSFET Transistor Device Data Motorola, Inc. 1994
1
MTB23P06E
ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted)
Characteristic OFF CHARACTERISTICS Drain-Source Breakdown Voltage (VGS = 0 Vdc, ID =... |
| Description |
TMOS POWER FET 23 AMPERES 60 VOLTS TMOS是功率FET 23安培60伏特
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| File Size |
280.12K /
10 Page |
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it Online |
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MOTOROLA[Motorola, Inc]
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| Part No. |
MTB23P06V MTB23P06
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| OCR Text |
...
TMOS VTM Power Field Effect Transistor D2PAK for Surface Mount
TMOS V is a new technology designed to achieve an on-resistance area product about one-half that of standard MOSFETs. This new technology more than doubles the present cell... |
| Description |
TMOS POWER FET 23 AMPERES 60 VOLTS
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| File Size |
248.67K /
10 Page |
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it Online |
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MOTOROLA[Motorola, Inc]
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| Part No. |
MTB29N15E
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| OCR Text |
...MOS E-FET.TM Power Field Effect Transistor
N-Channel Enhancement-Mode Silicon Gate
This advanced TMOS E-FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain-t... |
| Description |
TMOS POWER FET 29 AMPERES 150 VOLTS
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| File Size |
73.28K /
4 Page |
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it Online |
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MOTOROLA[Motorola, Inc]
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| Part No. |
MTB36N06E
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| OCR Text |
...
(c)Motorola TMOS Power MOSFET Transistor Device Data Motorola, Inc. 1994
1
MTB36N06E
ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted)
Characteristic OFF CHARACTERISTICS Drain-Source Breakdown Voltage (VGS = 0 Vdc, ID =... |
| Description |
TMOS POWER FET 36 AMPERES 60 VOLTS
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| File Size |
277.94K /
10 Page |
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it Online |
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MOTOROLA INC
MOTOROLA[Motorola, Inc]
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| Part No. |
MTB40N10E
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| OCR Text |
...MOS E-FET.TM Power Field Effect Transistor
N-Channel Enhancement-Mode Silicon Gate
This advanced TMOS E-FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain-t... |
| Description |
TMOS POWER FET 40 AMPERES 100 VOLTS
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| File Size |
189.75K /
10 Page |
View
it Online |
Download Datasheet |
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