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  x18 Datasheet PDF File

For x18 Found Datasheets File :: 1606    Search Time::0.829ms    
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    GS88118AD-133I GS88118AD-150I GS88118AD-200I GS88118AD-225I GS88118AD-150 GS88118AD-225 GS88118AD-250 GS88118AD-250I GS8

GSI[GSI Technology]
Part No. GS88118AD-133I GS88118AD-150I GS88118AD-200I GS88118AD-225I GS88118AD-150 GS88118AD-225 GS88118AD-250 GS88118AD-250I GS88118AT-166I GS88118AT-200 GS88118AT-133 GS88118AD-133 GS88118AD-166 GS88118AD-166I GS88118AD-200 GS88118AT-250 GS88118AT-250I GS88118AT-225 GS88118AT-225I GS88136AT-250I GS88118AT GS88118AT-133I GS88118AT-150 GS88118AT-150I GS88118AT-166 GS88118AT-200I GS88132AD-133 GS88132AD-133I GS88132AD-150 GS88132AD-150I GS88132AD-166 GS88132AD-166I GS88132AD-200 GS88132AD-200I GS88132AD-225 GS88132AD-225I GS88132AD-250 GS88132AD-250I GS88136AD-133 GS88136AD-133I GS88136AD-150 GS88136AD-150I GS88136AD-166 GS88136AD-166I GS88136AD-200 GS88136AD-200I GS88136AD-225 GS88136AD-225I GS88136AD-250 GS88136AD-250I GS88136AT-133 GS88136AT-133I GS88136AT-150 GS88136AT-150I GS88136AT-166 GS88136AT-166I GS88136AT-200 GS88136AT-200I GS88136AT-225 GS88136AT-225I GS88136AT-250
OCR Text ...peline 3-1-1-1 tKQ tCycle Curr (x18) Curr (x36) tKQ tCycle -250 -225 -200 -166 -150 -133 Unit 2.5 2.7 3.0 3.4 3.8 4.0 ns 4.0 4.4 5.0 6.0 6.7 7.5 ns 280 330 5.5 5.5 255 300 6.0 6.0 165 190 230 270 6.5 6.5 160 180 200 230 7.0 7.0 150 170 185 ...
Description 512K X 18, 256K X 36 9MB SYNCHRONOUS BURST SRAMS

File Size 593.15K  /  36 Page

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    CY7C43686AV CY7C43686AV-10AC CY7C43686AV-10AI CY7C43686AV-15AC CY7C43686AV-7AC CY7C4364 CY7C43646AV CY7C43646AV-10AC CY7

CYPRESS[Cypress Semiconductor]
Part No. CY7C43686AV CY7C43686AV-10AC CY7C43686AV-10AI CY7C43686AV-15AC CY7C43686AV-7AC CY7C4364 CY7C43646AV CY7C43646AV-10AC CY7C43646AV-15AC CY7C43646AV-7AC CY7C43666AV CY7C43666AV-10AC CY7C43666AV-15AC CY7C43666AV-7AC
OCR Text ...nal x36, and two unidirectional x18) * 1K x36/x18x2 (CY7C43646AV) * 4K x36/x18x2 (CY7C43666AV) * 16K x36/x18x2 (CY7C43686AV) * 0.25-micron CMOS for optimum speed/power * High-speed 133-MHz operation (7.5-ns Read/Write cycle times) * Low pow...
Description Memory : FIFOs
3.3V 1K 4K 16K x 36 x 18 x 2 Tri Bus FIFO

File Size 642.14K  /  40 Page

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    INTEGRATED SILICON SOLUTION INC
Part No. IS61NLP51236-133TQI
OCR Text ...cycle time. write truth table (x18) operation we we we we we bw bw bw bw bw a bw bw bw bw bw b read h x x write byte a l l h write byte b l h l write all bytes l l l write abort/nop l h h notes: 1. x means "don't care". 2. all inputs in th...
Description 512K X 36 ZBT SRAM, 4.2 ns, PQFP100

File Size 112.97K  /  18 Page

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    GS8321E32AGD-400IT

GSI TECHNOLOGY
Part No. GS8321E32AGD-400IT
OCR Text ....0 3.0 5.0 3.8 6.7 ns ns curr (x18) curr (x32/x36) 355 440 340 415 335 385 245 310 205 265 165 215 ma ma flow th rough 2-1-1-1 t kq tcycle 4.0 4.0 4.2 4.2 4.5 4.5 5.5 5.5 6.5 6.5 7.5 7.5 ns ns curr (x18) curr (x32/x36) 245 310 235 300 ...
Description CACHE SRAM, PBGA165

File Size 545.32K  /  32 Page

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    GS8161Z36T-133 GS8161Z36T-133I GS8161Z36T-133T GS8161Z36T-150 GS8161Z36T-150I GS8161Z36T-166 GS8161Z36T-166I GS8161Z36T-

GSI[GSI Technology]
Part No. GS8161Z36T-133 GS8161Z36T-133I GS8161Z36T-133T GS8161Z36T-150 GS8161Z36T-150I GS8161Z36T-166 GS8161Z36T-166I GS8161Z36T-166T GS8161Z36T-200 GS8161Z36T-200IT GS8161Z36T-225 GS8161Z36T-225I GS8161Z36T-225IT GS8161Z36T-225T GS8161Z36T-250I GS8161Z36T-250T GS8161Z36T-250IT GS8161Z18 GS8161Z18D-133 GS8161Z18D-133I GS8161Z18D-133IT GS8161Z18D-133T GS8161Z18D-150 GS8161Z18D-150I GS8161Z18D-150IT GS8161Z18D-150T GS8161Z18D-166 GS8161Z18D-166I GS8161Z18D-166IT GS8161Z18D-166T GS8161Z18D-200 GS8161Z18D-200I GS8161Z18D-200IT GS8161Z18D-200T GS8161Z18D-225 GS8161Z18D-225I GS8161Z18D-225IT GS8161Z18D-225T GS8161Z18D-250 GS8161Z18D-250I GS8161Z18D-250IT GS8161Z18D-250T GS8161Z18T-133 GS8161Z18T-133I GS8161Z18T-133IT GS8161Z18T-133T GS8161Z18T-150 GS8161Z18T-150I GS8161Z18T-150IT GS8161Z18T-150T GS8161Z18T-166 GS8161Z18T-166I GS8161Z18T-166IT GS8161Z18T-166T GS8161Z18T-200 GS8161Z18T-200I GS8161Z18T-200IT GS8161Z18T-200T GS8161Z18T-225 GS8161Z18T-225I GS8161Z18T-225IT GS8161Z18T-225T GS8161Z18T-250 GS8161Z18T-250I GS8161Z18T-250IT GS8161Z18T-250T GS8161Z32D-133 GS8161Z32D-133I GS8161Z32D-133IT GS8161Z32D-133T GS8161Z32D-150 GS8161Z32D-150I GS8161Z32D-150IT GS8161Z32D-150T GS8161Z32D-166 GS8161Z32
OCR Text ...-1 3.3 V 2.5 V tKQ tCycle Curr (x18) Curr (x32/x36) Curr (x18) Curr (x32/x36) tKQ tCycle Curr (x18) Curr (x32/x36) Curr (x18) Curr (x32/x36) -250 -225 -200 -166 -150 -133 Unit 2.5 2.7 3.0 3.4 3.8 4.0 ns 4.0 4.4 5.0 6.0 6.7 7.5 ns 280 330 27...
Description 18Mb Burst SRAMs
18Mb Pipelined and Flow Through Synchronous NBT SRAM

File Size 593.16K  /  36 Page

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    GS816132D-200IT GS816118D-133 GS816132D-133

GSI TECHNOLOGY
Part No. GS816132D-200IT GS816118D-133 GS816132D-133
OCR Text ...8 6.7 4.0 7.5 ns ns 3.3 v curr (x18) curr (x36) 280 330 255 300 230 270 200 230 185 215 165 190 ma ma 2.5 v curr (x18) curr (x36) 275 320 250 295 230 265 195 225 180 210 165 185 ma ma flow through 2-1-1-1 t kq tcycle 5.5 5.5 6.0 6.0 6.5 6....
Description 512K X 32 CACHE SRAM, 6.5 ns, PBGA165
1M X 18 CACHE SRAM, 8.5 ns, PBGA165
512K X 32 CACHE SRAM, 8.5 ns, PBGA165

File Size 605.31K  /  36 Page

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    K4R441869B-NMCK7 K4R441869B-NMCK8 K4R271669B-NMCG6 K4R271669B-NMCK7 K4R271669B-NBMCCK8 K4R271669B-NCG6 K4R271669B-NCK7 K

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K4R441869B-NMCK7 K4R441869B-NMCK8 K4R271669B-NMCG6 K4R271669B-NMCK7 K4R271669B-NBMCCK8 K4R271669B-NCG6 K4R271669B-NCK7 K4R271669B-NCK8 K4R441869B-NCK8 K4R271669B K4R271669B-MCG6 K4R271669B-MCK7 K4R271669B-MCK8 K4R441869B-MCG6 K4R441869B-MCK7 K4R441869B-MCK8 K4R441869B-NCG6 K4R441869B-NCK7 K4R441869B-NMCG6 K4R271869B-MCK8 K4R271869B-NCG6
OCR Text ...r management, byte masking, and x18 organization. The two data bits in the x18 organization are general and can be used for additional storage and bandwidth or for error correction. Direct RDRAMTM SAMSUNG 050 K4Rxxxx69B-Nxxx ...
Description 256K x 18 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz.
256K x 18 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz.
256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz.
K4R271669B:Direct RDRAMData Sheet
256K x 16/18 bit x 32s banks Direct RDRAMTM
256K x 16 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz.
256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz.

File Size 304.91K  /  20 Page

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    Micron Semiconductor
Part No. MT58L64L32D MT58L64L36D
OCR Text ... * Low capacitive bus loading * x18, x32, and x36 options available OPTIONS * Timing (Access/Cycle/MHz) 3.5ns/6ns/166 MHz 4.0ns/7.5ns/133 MHz 5ns/10ns/100 MHz * Configurations 128K x 18 64K x 32 64K x 36 * Packages 100-pin TQFP * O...
Description (MT58LxxxLxxD) 2Mb SRAM

File Size 372.81K  /  19 Page

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