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  w diode Datasheet PDF File

For w diode Found Datasheets File :: 101382    Search Time::2.843ms    
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    IRF530N

NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
Part No. IRF530N
OCR Text ...7 12 68 79 175 UNIT V V V A A A w C AVALANCHE ENERGY LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC...diode LIMITING VALUES AND CHARACTERISTICS Tj = 25C unless otherwise specified SYMBOL PARAMETER IS I...
Description N-channel TrenchMOS transistor(N沟道 TrenchMOS 晶体
N-channel TrenchMOS TM transistor

File Size 95.87K  /  7 Page

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    IRF7106 IRF7106TR

IRF[International Rectifier]
Part No. IRF7106 IRF7106TR
OCR Text ...nel -2.5 -2.0 -10 Units A w w/C V V/ns C Thermal Resistance Parameter RJA Junction-to-Ambient (PCB Mount)** Min. ---- Typ....diode) Pulsed Source Current (Body diode) diode Forward Voltage Reverse Recovery Time Reverse Recove...
Description 20V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package
Power MOSFET(Vdss= -20V)

File Size 157.44K  /  7 Page

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    IRF7807D1

International Rectifier
Part No. IRF7807D1
OCR Text ...66 2.5 1.6 3.5 2.2 -55 to 150 C w A A Units V A/S A/S A/S G 1 8 K/D K/D K/D K/D D 2 7 3 6 4 5 SO-8 Top View ...diode & Body diode Ratings and Characteristics Parameter diode Forward Voltage Reverse Recovery Time...
Description MOSFET / SCHOTTKY diode

File Size 162.75K  /  8 Page

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    IRF7807D2

International Rectifier
Part No. IRF7807D2
OCR Text ...66 2.5 1.6 3.7 2.3 -55 to 150 C w A A Units V A/S A/S A/S G 1 8 K/D K/D K/D K/D D 2 7 3 6 4 5 SO-8 Top View ...diode & Body diode Ratings and Characteristics Parameter diode Forward Voltage Reverse Recovery Time...
Description MOSFET / SCHOTTKY diode

File Size 131.40K  /  8 Page

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    IRF7807VD1

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF7807VD1
OCR Text ...66 2.5 1.6 3.5 2.2 -55 to 150 C w A A Units V A/S A/S A/S G 1 8 K/D K/D K/D K/D D 2 7 3 6 4 5 SO-8 Top View ...diode & Body diode Ratings and Characteristics Parameter diode Forward Voltage Reverse Recovery Time...
Description Circular Connector; MIL SPEC:MIL-C-26482, Series I, Solder; Body Material:Aluminum; Series:SP06; Number of Contacts:5; Connector Shell Size:14; Connecting Termination:Solder; Circular Shell Style:Straight Plug; Body Style:Straight FETKY⑩MOSFET肖特基二极管
FETKY MOSFET / SCHOTTKY diode
FETKY⑩ MOSFET / SCHOTTKY diode

File Size 116.12K  /  9 Page

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    IRF7807VD2 IRF7807VD2TR

IRF[International Rectifier]
Part No. IRF7807VD2 IRF7807VD2TR
OCR Text ...66 2.5 1.6 3.7 2.3 -55 to 150 C w A A Units V A/S A/S A/S G 1 8 K/D K/D K/D K/D D 2 7 3 6 4 5 SO-8 Top View ...diode & Body diode Ratings and Characteristics Parameter diode Forward Voltage Reverse Recovery Time...
Description 30V FETKY - MOSFET and Schottky diode in a SO-8 package
FETKY MOSFET / SCHOTTKY diode
FETKY⑩ MOSFET / SCHOTTKY diode

File Size 113.54K  /  9 Page

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    IRF7807V

IRF[International Rectifier]
Part No. IRF7807V
OCR Text ... 4 5 SO-8 T o p V ie w DEVICE CHARACTERISTICS IRF7807V RDS(on) QG Qsw Qoss 17m 9.5nC 3.4nC 12nC Absolute Maximum Ratings Pa...diode) Pulsed Source Current Thermal Resistance Parameter Maximum Junction-to-Ambient Maximum Juncti...
Description N Channel Application Specific MOSFET

File Size 126.34K  /  8 Page

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    IRF7807 IRF7807A IRF7807ATR IRF7807TR

IRF[International Rectifier]
Part No. IRF7807 IRF7807A IRF7807ATR IRF7807TR
OCR Text ... 4 5 SO-8 T o p V ie w Device Features IRF7807 IRF7807A Vds 30V 30V Rds(on) 25m 25m Qg 17nC 17nC Qsw 5.2nC Qoss 16.8nC 16.8nC ...diode) Pulsed source Current TJ, TSTG IS ISM 2.5 66 25C 70C IDM PD Symbol VDS VGS ID 8.3 6.6 66 2.5 ...
Description 8.3 A, 30 V, 0.025 ohm, N-CHANNEL, Si, POwER, MOSFET
Chip-Set for DC-DC Converters
30V Single N-Channel HEXFET Power MOSFET in a SO-8 package

File Size 238.61K  /  8 Page

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    IRF7811AV IRF7811AVTR

International Rectifier
Part No. IRF7811AV IRF7811AVTR
OCR Text ... 4 5 SO-8 T o p V ie w DEVICE CHARACTERISTICS IRF7811AV RDS(on) QG Qsw Qoss 11m 17nC 6.7nC 8.1nC Absolute Maximum Ratings P...diode) Pulsed Source Current Thermal Resistance Parameter Maximum Junction-to-Ambient Maximum Juncti...
Description Si, SMALL SIGNAL, FET, MS-012AA
N-Channel Application-Specific MOSFETs

File Size 85.36K  /  6 Page

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    IPD30N06S3L-20

Infineon Technologies AG
Part No. IPD30N06S3L-20
OCR Text ...5 -55 ... +175 55/175/56 mJ A V w C Unit A Rev. 1.1 page 1 2007-11-07 IPD30N06S3L-20 Parameter Symbol Conditions min. ...diode diode continous forward current2) diode pulse current2) diode forward voltage Reverse recovery...
Description OptiMOS-T Power-Transistor

File Size 178.00K  /  9 Page

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For w diode Found Datasheets File :: 101382    Search Time::2.843ms    
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