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  unilateral Datasheet PDF File

For unilateral Found Datasheets File :: 400    Search Time::1.25ms    
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    ATVAULTIC-STK02-460R ATVAULTIC-STK02-460Z ATVAULTIC460 ATVAULTIC460-R ATVAULTIC460-Z

ATMEL Corporation
Part No. ATVAULTIC-STK02-460R ATVAULTIC-STK02-460Z ATVAULTIC460 ATVAULTIC460-R ATVAULTIC460-Z
OCR Text ...ic protocols such as secret-key unilateral or mutual authentication [3] and public key based unilateral or mutual authentication [4]. - Secure Channel Protocol using 3DES or AES. - Robust communication protocol stacked over the physical com...
Description Public Key Pair Generation

File Size 690.27K  /  30 Page

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    BFG35 BFG35_3

NXP Semiconductors
Part No. BFG35 BFG35_3
OCR Text ...dB dB mV UNIT V mA W maximum unilateral power gain IC = 100 mA; VCE = 10 V; f = 500 MHz; Tamb = 25 C IC = 100 mA; VCE = 10 V; f = 800 MHz; Tamb = 25 C Vo output voltage IC = 100 mA; VCE = 10 V; dim = -60 dB; RL = 75 ; f(p+q-r) =...
Description NPN 4 GHz wideband transistor
From old datasheet system

File Size 91.52K  /  16 Page

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    BFG197 BFG197_XR BFG197_X BFG197/X BFG197/XR

NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
Part No. BFG197 BFG197_XR BFG197_X BFG197/X BFG197/XR
OCR Text ...ce transition frequency maximum unilateral power gain open base DC value up to Ts = 75 C; note 1 IC = ic = 0; VCB = 8 V; f = 1 MHz IC = 50 mA; VCE = 4 V; f = 2 GHz IC = 50 mA; VCE = 6 V; Tamb = 25 C; f = 1 GHz IC = 50 mA; VCE = 6 V; Tamb = ...
Description NPN 7 GHz wideband transistor

File Size 88.77K  /  13 Page

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    Motorola Mobility Holdings, Inc.
Part No. MRF9511LT1
OCR Text ... e 13.3 e 10.1 e e e db maximum unilateral gain (1) (v ce = 8.0 v, i c = 30 ma, f = 1.0 ghz) (v ce = 8.0 v, i c = 30 ma, f = 2.0 ghz) (v ce = 5.0 v, i c = 30 ma, f = 1.5 ghz) g umax e e e 17 10.5 e e e e e e e 14 8.0 e e e e e e e 14 ...
Description CAP CERAMIC 5.1PF 25V C0G 0201 L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR

File Size 219.26K  /  16 Page

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    Bourns, Inc.
Part No. BFT93/T1
OCR Text ... 500 mhz - 4 - ghz g um maximum unilateral power gain i c = - 30 ma; v ce = - 5 v; f = 500 mhz; t amb = 25 c - 15.5 - db f noise ?gure i c = - 10 ma; v ce = - 5 v; f = 500 mhz - 2.4 - db t j junction temperature - - 150 c february 1995 ...
Description TRANSISTOR UHF BIPOLAR BREITBAND 晶体管超高频双极BREITBAND

File Size 179.02K  /  20 Page

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    BF547

NXP Semiconductors
Philips Semiconductors
Part No. BF547
OCR Text ... GUM Note 1. GUM is the maximum unilateral power gain, assuming S12 is zero and G UM PARAMETER collector cut-off current DC current gain transition frequency feedback capacitance maximum unilateral power gain; note 1 CONDITIONS IE = 0; VCB ...
Description NPN 1 GHz wideband transistor

File Size 96.75K  /  11 Page

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