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				GHz Technology
Part No.	1719-8
OCR Text	to make changes without further notice. ghz recommends that before the product(s) described herein are written into specifications, or used ...8 8 watts, 28 volts, class c microwave 1700 - 1900 mhz general description the 1719-8 is a common...
Description	8 W, 28 V, 1700-1900 MHz common base transistor BJT
File Size	72.14K / 2 Page	View it Online	Download Datasheet

				Amphenol, Corp.
Part No.	HYM7V75A801BLTZG-8 HYM7V75A801BLTZG-10S HYM7V75A801BLTZG-10P HYM7V75A801BTZG-10S HYM7V75A801BTZG-8 HYM7V75A801BTZG-10P
OCR Text	...duct description and is subject to change without notice. hyundai electronics does not assume any responsibility for use of circuits descri...8, or full page for sequential burst - . 1, 2, 4 or 8 for interleave burst progr ammable /c...
Description	x72 SDRAM Module x72内存模块
File Size	304.33K / 14 Page	View it Online	Download Datasheet

				Atmel
Part No.	ATAM862-8
OCR Text	... (9.5 ma typically) 2.0 v to 4.0 v operation voltage for single li-cell power supply -40 c to +125 c operation temperature sso...8 is a single package dual-chip circuit. it combines a uhf ask/fsk transmitter with a 4-bit microco...
Description	Microcontroller with UHF ASK/FSK Transmitter at 868 MHz and 915 MHz, 4 KB Flash, 3 Timer, SSI, 11 I/O Lines, 64 Byte EEPROM, V_DD ...
File Size	1,121.93K / 107 Page	View it Online	Download Datasheet

				Analog Devices
Part No.	AD4360-8
OCR Text	to be accurate and reliable. how e ver, n o resp on sibili ty is assume d b y a n alog de vices fo r its use, nor for an y i n f...8 v logic compatibility integer-n synt hesizer programmable output power level 3-wire seri al in...
Description	Integrated Synthesizer and VCO
File Size	387.91K / 24 Page	View it Online	Download Datasheet

				Mitsubishi Electric Corporation
Part No.	MH16S64BAMD-8 MH16S64BAMD-10
OCR Text	...spec. some contents are subject to change without notice. mit-ds-0212-0.4 description the mh16s64bamd is 16777216 word x 64 bit synchronous...8/full page(programmable) 4 bank operation controlled by ba0,1(bank address) /cas latency- 2/3(progr...
Description	1073741824-BIT (16777216 - WORD BY 64-BIT)SynchronousDRAM
File Size	619.36K / 55 Page	View it Online	Download Datasheet

				Powerex, Inc.
Part No.	CR8PM-8
OCR Text	to renesas technology corp. the semiconductor operations of hitachi and mitsubishi electric were transferred to renesas technology corporat...8.0 120 60 5.0 0.5 6.0 10 2.0 C40 ~ +125 C40 ~ +125 2.0 1500 symbol v rrm v rsm v r (dc) v drm v d (...
Description	CR8PM-8 CR8PM-12 Datasheet 100K/MAR.20.03 CR8PM-8 CR8PM-12 Datasheet 100K/MAR.20.03 CR8PM - 8 CR8PM - 12数据100K/MAR.20.03
File Size	97.09K / 6 Page	View it Online	Download Datasheet

				Micron Technology, Inc.
Part No.	MT46V16M8TG-8 MT46V16M8TG-75ZL MT46V16M8TG-75L MT46V32M4TG-75L MT46V8M16TG-8L MT46V32M4TG-75ZL MT46V32M4TG-8L MT46V8M16TG-75L MT46V16M8TG-8L
OCR Text	to change products or specifications without notice. 128mx4x8x16ddr_c.p65 ? rev. c; pub. 4/01 ?2001, micron technology, inc. 128mb: x4, x8,...8 100 mhz 125 mhz 3.4ns 0.8ns +0.6ns minimum clock rate @ cl = 2 (-75z and -8) and cl = 2.5 (-75) ...
Description	DOUBLE DATA RATE DDR SDRAM DC-DC Converter; Supply Voltage:75V; Output Voltage:3.3V; Number of Outputs:1; Power Rating:33W; Mounting Type:PC Board; Series:EXB50; Efficiency:90%; Leaded Process Compatible:Yes; Output Current:10A RoHS Compliant: Yes DC-DC Converter; Supply Voltage:75V; Output Voltage:5V; Number of Outputs:1; Power Rating:50W; Mounting Type:PC Board; Series:EXB50; Efficiency:91%; Leaded Process Compatible:Yes; Output Current:10A RoHS Compliant: Yes DC-DC Converter; Output Voltage:3.3V; Number of Outputs:1; Power Rating:26.4W; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No; Supply Voltage Max:75V; Supply Voltage Min:36V RoHS Compliant: No 8 BIT MCU, 7.5K FLASH P/S, DC-DC, -48V TO 5V/3.3V 60W 1/4 BRICK PS, 100W, 48-TO-12 VDC, 2%, NEG EN, 1/4 BRICK 双倍数据速率的DDR SDRAM内存 DOUBLE DATA RATE DDR SDRAM 双倍数据速率的DDR SDRAM内存
File Size	2,530.36K / 68 Page	View it Online	Download Datasheet

				Semikron International
Part No.	IGD-8-326-E1F12-BH-FA
OCR Text	...ng frequency DC voltage applied to the capacitor bank network voltage (line side), -20% / +15% 50Hz / 1min Tamb=40C Tvj for continous operat...8-326-E1F12-BH-FA fsw VDC VAC Visol Ptot Tj CDC C LTE Preliminary Data Features * Highly comp...
Description	Three-phase inverter
File Size	2,255.07K / 5 Page	View it Online	Download Datasheet

				Microsemi, Corp.
Part No.	HY57V654020BLTC-8 HY57V654020BTC-75 HY57V654020BTC-8 HY57V654020BLTC-6 HY57V654020BTC-10 HY57V654020BTC-6 HY57V654020BTC-10S HY57V654020BLTC-10S
OCR Text	...ynchronous operation referenced to a positive edge of the clock. All inputs and outputs are synchronized with the rising edge of the clock i...8 or Full page), and the burst count sequence(sequential or interleave). A burst of read or write cy...
Description	x4 SDRAM 16Mx4\|3.3V\|4K\|H\|SDR SDRAM - 64M 16Mx4 \| 3.3 \| 4K的\|魔\| SDRAM的特别提款权- 64
File Size	145.54K / 12 Page	View it Online	Download Datasheet

				Intersil Corporation http://
Part No.	HS1-81C55RH-8 HS9-81C55RH-8 HS9-81C55RH-Q HS1-81C55RH-Q HS1-81C56RH-8 HS9-81C56RH-8 HS9-81C56RH-Q HS1-81C56RH-Q
OCR Text	... of epitaxial starting material to eliminate the parasitic SCR effect seen in conventional bulk CMOS devices. The HS-81C55/56RH is intended ...8. A maximum post irradiation access time of 500ns allows the HS-81C55/56RH to be used with the HS-8...
Description	Radiation Hardened 256 x 8 CMOS RAM
File Size	111.41K / 11 Page	View it Online	Download Datasheet

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