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For silicon-avalanche Found Datasheets File :: 10345 Search Time::2.844ms
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				Vishay Intertechnology, Inc. Vishay Intertechnology,Inc. Vishay Telefunken
Part No.	BYW52 BYW53 BYW56 BYW55 BYW54
OCR Text	Silicon Mesa Rectifiers Features D D D D D D Controlled avalanche characteristics Glass passivated junction Hermetically sealed package Low reverse current High surge current loading Electrically equivalent diodes: BYW52 - 1N5059 BYW53 -...
Description	Coaxial Cable; Coaxial RG/U Type:6; Impedance:75ohm; Conductor Size AWG:18; No. Strands x Strand Size:Solid; Jacket Material:Polyvinylchloride (PVC); Jacket Color:Black; Leaded Process Compatible:Yes; Voltage Nom.:300V RoHS Compliant: Yes 硅梅萨整流器 Low-Smoke Zero-Halogen (LSZH) Shipboard Precision Low-Loss Serial Analog & Digital Video Coax Cable; Coaxial RG/U Type:11; Impedance:75ohm; Conductor Size AWG:14; No. Strands x Strand Size:Solid RoHS Compliant: Yes 硅梅萨整流器 Low-Smoke Zero-Halogen (LSZH) Shipboard Precision Low-Loss Serial Analog & Digital Video Coax Cable; Coaxial RG/U Type:11; Impedance:75ohm; Conductor From old datasheet system Silicon Mesa Rectifiers
File Size	49.37K / 4 Page	View it Online	Download Datasheet

				ZETEX[Zetex Semiconductors]
Part No.	FMMT413
OCR Text	SILICON PLANAR AVALANCHE TRANSISTOR PROVISIONAL DATASHEET ISSUE 2 MARCH 1996 FEATURES * Avalanche mode operation * 50A Peak avalanche current * Low inductance packaging APPLICATIONS * Laser LED drivers * Fast edge generation * High speed ...
Description	NPN SILICON PLANAR AVALANCHE TRANSISTOR
File Size	89.55K / 2 Page	View it Online	Download Datasheet

				ZETEX[Zetex Semiconductors]
Part No.	FMMT415 FMMT417
OCR Text	SILICON PLANAR AVALANCHE TRANSISTOR ISSUE 4 - OCTOBER 1995 7 FEATURES * Specifically designed for Avalanche mode operation * 60A Peak Avalanche Current (Pulse width=20ns) APPLICATIONS * Laser LED drivers * Fast edge generation * High speed...
Description	NPN SILICON PLANAR AVALANCHE TRANSISTOR
File Size	86.77K / 2 Page	View it Online	Download Datasheet

				FAIRCHILD SEMICONDUCTOR CORP Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
Part No.	HUF75343S3 HUF75343S3S HUF75343G3 HUF75343P3 HUF75343S3ST HUF75343S3NL
OCR Text	...owest possible onresistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was des...
Description	75A, 55V, 0.009 Ohm, N-Channel UltraFET Power MOSFETs 75 A, 55 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 75A, 55V, 0.009 Ohm, N-Channel UltraFET Power MOSFETs; Package: TO-263(D2PAK); No of Pins: 2; Container: Tape & Reel 75 A, 55 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
File Size	228.29K / 10 Page	View it Online	Download Datasheet

				STMICROELECTRONICS[STMicroelectronics]
Part No.	IRF640FP IRF640
OCR Text	...atecode Being Z or K Identifies Silicon Characterized in this Datasheet (**) Limited only by Maximum Temperature Allowed October 1999 ...AVALANCHE CHARACTERISTICS Symbo l IAR E AS Parameter Avalanche Current, Repetitive or Not-Repetitiv...
Description	N - CHANNEL 200V - 0.150ohm - 18A TO-220/TO-220FP MESH OVERLAY] MOSFET
File Size	105.91K / 9 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF640N IRF640NL IRF640NS
OCR Text	...extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET ...Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating ...
Description	Power MOSFET(Vdss=200V/ Rds(on)=0.15ohm/ Id=18A) Power MOSFET(Vdss=200V, Rds(on)=0.15ohm, Id=18A)
File Size	153.14K / 11 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRL2910 L2910
OCR Text	...extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET ...Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating ...
Description	RES THICK FILM POWER 10 OHM 5W HEXFET Power MOSFET
File Size	120.70K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRL5602S IRF530S IRL5602STRR IRL5602STRL
OCR Text	...extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET ...Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating ...
Description	-20V Single P-Channel HEXFET Power MOSFET in a D2-Pak package
File Size	169.26K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRLI2910
OCR Text	...extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET ...Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating ...
Description	HEXFET Power MOSFET
File Size	140.03K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier] International Rectifier, Corp.
Part No.	IRLU9343-701 IRLR9343 IRLU9343
OCR Text	...o achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery and internal Gate resistance are optimiz...avalanche capability. These features combine to make this MosFET a highly efficient, robust and reli...
Description	-55V Single P-Channel HEXFET Power MOSFET in a D-Pak package -55V Single P-Channel HEXFET Power MOSFET in a I-Pak package DIGITAL AUDIO MOSFET DIODE MED-FAST BAS116 80VR 250MA 1.25VF@150MA 1.5US TO-236AB -55 150C 数字音频MOSFET
File Size	242.32K / 10 Page	View it Online	Download Datasheet

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