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  samsungs Datasheet PDF File

For samsungs Found Datasheets File :: 418    Search Time::2.531ms    
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    Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K6F2008V2E K6F2008V2E-YF70 K6F2008V2E-LF55 K6F2008V2E-LF70 K6F2008V2E-YF55
OCR Text ...8V2E families are fabricated by samsungs advanced Full CMOS process technology. The families support industrial temperature ranges for user flexibility of system design. The families also supports low data retention voltage for battery back...
Description 256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM 256Kx8位超低功耗和低电压的CMOS静态RAM

File Size 133.16K  /  9 Page

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    Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
ITT, Corp.
Part No. K7B161825A K7A163600A K7A163601A K7B163625A K7A161800A K7A161801A K7A203200B-QCI14
OCR Text ...K7B161825A are fabricated using samsungs high performance CMOS technology and is available in a 100pin TQFP package. Multiple power and ground pins are utilized to minimize ground bounce. FAST ACCESS TIMES PARAMETER Cycle Time Clock Acc...
Description    512Kx36 & 1Mx18 Synchronous SRAM
64Kx36 & 64Kx32-Bit Synchronous Pipelined Burst SRAM
Aluminum Snap-In Capacitor; Capacitance: 390uF; Voltage: 400V; Case Size: 35x30 mm; Packaging: Bulk
Aluminum Snap-In Capacitor; Capacitance: 470uF; Voltage: 250V; Case Size: 25x30 mm; Packaging: Bulk 512Kx36

File Size 264.02K  /  19 Page

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    K7B323625M K7A321800M-QC14 K7B323625M-QC6575 K7A321800M-QC20 K7A323600M-QC14 K7A323600M-QC20 K7A323600M-QC25 K7B321825M

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K7B323625M K7A321800M-QC14 K7B323625M-QC6575 K7A321800M-QC20 K7A323600M-QC14 K7A323600M-QC20 K7A323600M-QC25 K7B321825M K7B321825M-QC65 K7B321825M-QC75 K7B323625M-QC65
OCR Text ...K7B321825M are fabricated using samsungs high performance CMOS technology and is available in a 100pin TQFP package. Multiple power and ground pins are utilized to minimize ground bounce. FAST ACCESS TIMES PARAMETER Cycle Time Clock Acc...
Description 1Mx36 & 2Mx18 Synchronous SRAM

File Size 262.63K  /  19 Page

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    KM68B261A KM68B261A-6 KM68B261A-7 KM68B261A-8

Samsung semiconductor
Part No. KM68B261A KM68B261A-6 KM68B261A-7 KM68B261A-8
OCR Text ... The device is fabricated using samsungs advanced BiCMOS process and designed for high-speed system applications. It is particularly well suited for use in highdensity high-speed system applications. The KM68B261A is packaged in a 300 mil 3...
Description 32K x 8 Bit High-Speed BiCMOS Static RAM

File Size 59.91K  /  7 Page

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    KM732V589A

Samsung semiconductor
Part No. KM732V589A
OCR Text ...M732V589A/L is fabricated using samsungs high performance CMOS technology and is available in a 100pin QFP/ TQFP package. Multiple power and ground pins are utilized to minimize ground bounce. FAST ACCESS TIMES Parameter Cycle Time Cloc...
Description 32Kx32 Synchronous SRAM

File Size 329.71K  /  15 Page

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    K6F4008U2E K6F4008U2E-EF55 K6F4008U2E-EF70 K6F4008U2E-F

SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Electronic
Part No. K6F4008U2E K6F4008U2E-EF55 K6F4008U2E-EF70 K6F4008U2E-F
OCR Text ...8U2E families are fabricated by samsungs advanced full CMOS process technology. The families support industrial temperature range and Chip Scale Package for user flexibility of system design. The families also supports low data retention vo...
Description From old datasheet system
512K x 8 bit Super Low Power and Low Voltage Full CMOS Static RAM

File Size 102.58K  /  9 Page

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    K6F8016R6D K6F8016R6D-F

Samsung Electronic
Samsung semiconductor
Part No. K6F8016R6D K6F8016R6D-F
OCR Text ...6R6D families are fabricated by samsungs advanced full CMOS process technology. The families support industrial operating temperature ranges and have chip scale package for user flexibility of system design. The families also support low da...
Description 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM

File Size 150.73K  /  9 Page

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    K6T8016C3M K6T8016C3M-B K6T8016C3M-F K6T8016C3M-RB55

Samsung semiconductor
Part No. K6T8016C3M K6T8016C3M-B K6T8016C3M-F K6T8016C3M-RB55
OCR Text ...6C3M families are fabricated by samsungs advanced CMOS process technology. The families support industrial operating temperature ranges for user flexibility of system design. The families also support low data retention voltage for battery ...
Description 512Kx16 bit Low Power CMOS Static RAM

File Size 98.28K  /  9 Page

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For samsungs Found Datasheets File :: 418    Search Time::2.531ms    
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