|
|
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
Part No. |
RD30HUF1
|
OCR Text |
RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD30HUF1
DRAWING
22.0+/-0.3 18.0+/-0.3 7.6+/-0.3 4-C1
Silicon MOSFET Power Transistor,520MHz,30W DESCRIPTION
RD30HUF1 is a MOS FET type transistor speci... |
Description |
Silicon MOSFET Power Transistor/520MHz/30W Silicon MOSFET Power Transistor,520MHz,30W
|
File Size |
386.46K /
7 Page |
View
it Online |
Download Datasheet |
|
|
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
Part No. |
RD20HMF1
|
OCR Text |
RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD20HMF1
DRAWING
22.0+/-0.3 18.0+/-0.3 7.2+/-0.5 7.6+/-0.3 4-C1
RoHS Compliance, DESCRIPTION
Silicon MOSFET Power Transistor,900MHz,20W
OUTLINE
RD... |
Description |
Silicon MOSFET Power Transistor,900MHz,20W
|
File Size |
333.23K /
7 Page |
View
it Online |
Download Datasheet |
|
|
|
Quanzhou Jinmei Electro... MITSUBISHI[Mitsubishi Electric Semiconductor]
|
Part No. |
RD16HHF1 RD16HHF1-15
|
OCR Text |
RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD16HHF1
OUTLINE DRAWING
RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,16W
DESCRIPTION
RD16HHF1 is a MOS FET type transistor specifically des... |
Description |
Silicon MOSFET Power Transistor 30MHz,16W
|
File Size |
272.16K /
8 Page |
View
it Online |
Download Datasheet |
|
|
|
Quanzhou Jinmei Electro... MITSUBISHI[Mitsubishi Electric Semiconductor]
|
Part No. |
RD15HVF1 RD15HVF1-15
|
OCR Text |
RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD15HVF1
DRAWING
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz520MHz,15W
DESCRIPTION
RD15HVF1 is a MOS FET type transistor specifically des... |
Description |
Silicon MOSFET Power Transistor, 175MHz520MHz,15W
|
File Size |
363.09K /
9 Page |
View
it Online |
Download Datasheet |
|
|
|
Motorola, Inc. MOTOROLA[Motorola Inc] MOTOROLA[Motorola, Inc]
|
Part No. |
MRF5007R1 MRF5007
|
OCR Text |
RF MOSFET Line
RF Power Field Effect Transistor
N-Channel Enhancement-Mode
The MRF5007 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband performance of this device m... |
Description |
Circular Connector; MIL SPEC:MIL-C-5015 E/F/R; Body Material:Metal; Series:SM3102; No. of Contacts:19; Connector Shell Size:24; Connecting Termination:Solder; Circular Shell Style:Box Mount Receptacle; Body Style:Straight N-CHANNEL BROADBAND RF POWER FET
|
File Size |
159.70K /
10 Page |
View
it Online |
Download Datasheet |
|
|
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
Part No. |
RD12MVS1
|
OCR Text |
RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD12MVS1
0.2+/-0.05
(0.22)
RoHS Compliance, DESCRIPTI...MOSFET Power Transistor, 175MHz, 12W
OUTLINE DRAWING
6.0+/-0.15 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05
... |
Description |
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 12W
|
File Size |
428.96K /
7 Page |
View
it Online |
Download Datasheet |
|
Price and Availability
|