|
|
|
CALMIRCO[California Micro Devices Corp]
|
Part No. |
NESG2021M16-T3-A NESG2021M16 NESG2021M16-T3
|
OCR Text |
...LE M16 PACKAGE: 6-pin lead-less minimold M16
* *
DESCRIPTION
NEC's NESG2021M16 is fabricated using NECs high voltage Silicon Germanium process (UHS2-HV), and is designed for a wide range of applications including low noise amplifiers... |
Description |
NECs NPN SiGe HIGH FREQUENCY TRANSISTOR
|
File Size |
178.77K /
3 Page |
View
it Online |
Download Datasheet |
|
|
|
CEL[California Eastern Labs]
|
Part No. |
NESG2031M16-T3-A NESG2031M16
|
OCR Text |
...LE M16 PACKAGE: 6-pin lead-less minimold M16
* *
DESCRIPTION
NEC's NESG2031M16 is fabricated using NECs high voltage Silicon Germanium process (UHS2-HV), and is designed for a wide range of applications including low noise amplifiers... |
Description |
HIGH FREQUENCY TRANSISTOR
|
File Size |
179.03K /
3 Page |
View
it Online |
Download Datasheet |
|
|
|
CEL[California Eastern Labs]
|
Part No. |
NESG204619-T1-A NESG204619 NESG204619-A
|
OCR Text |
...UM RATINGS) = 5.0 V 3-PIN SUPER minimold (19) PACKAGE
ORDERING INFORMATION
PART NUMBER NESG204619-A NESG204619-T1-A QUANTITY 50 pcs (Non reel) 3 kpcs/reel SUPPLYING FORM * 8 mm wide embossed taping * Pin 3 (Collector) face the perforati... |
Description |
NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION
|
File Size |
231.18K /
4 Page |
View
it Online |
Download Datasheet |
|
|
|
NEC, Corp. NEC Corp. NEC[NEC]
|
Part No. |
NESG2046M33-T3-A NESG2046M33 NESG2046M33-A
|
OCR Text |
...V
*
3-PIN SUPER LEAD-LESS minimold (M33) PACKAGE
ORDERING INFORMATION
PART NUMBER NESG2046M33-A NESG2046M33-T3-A QUANTITY 50 pcs (Non reel) 10 kpcs/reel SUPPLYING FORM * 8 mm wide embossed taping * Pin 2 (Base) face the perforatio... |
Description |
NECs NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH -GAIN AMPLIFICATION 邻舍npn型硅锗晶体管低噪声,高增益放 NECs NPN SiGe TRANSISTOR FOR LOW NOISE / HIGH -GAIN AMPLIFICATION
|
File Size |
116.27K /
3 Page |
View
it Online |
Download Datasheet |
|
|
|
CEL[California Eastern Labs]
|
Part No. |
NESG2046M33-T3-A NESG2046M33 NESG2046M33-A
|
OCR Text |
...V
*
3-PIN SUPER LEAD-LESS minimold (M33) PACKAGE
ORDERING INFORMATION
PART NUMBER NESG2046M33-A NESG2046M33-T3-A QUANTITY 50 pcs (Non reel) 10 kpcs/reel SUPPLYING FORM * 8 mm wide embossed taping * Pin 2 (Base) face the perforatio... |
Description |
NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH -GAIN AMPLIFICATION
|
File Size |
220.89K /
4 Page |
View
it Online |
Download Datasheet |
|
|
|
CEL[California Eastern Labs]
|
Part No. |
NESG2101M16-T3-A NESG2101M16
|
OCR Text |
...LE M16 PACKAGE: 6-pin lead-less minimold M16
* *
DESCRIPTION
NEC's NESG2101M16 is fabricated using NECs high voltage Silicon Germanium process (UHS2-HV), and is designed for a wide range of applications including low noise amplifiers... |
Description |
NPN SiGe HIGH FREQUENCY TRANSISTOR
|
File Size |
179.17K /
3 Page |
View
it Online |
Download Datasheet |
|
|
|
CEL[California Eastern Labs]
|
Part No. |
NESG2107M33-T3-A NESG2107M33 NESG2107M33-A
|
OCR Text |
...NSISTORS
3-PIN SUPER LEAD-LESS minimold (M33) PACKAGE
ORDERING INFORMATION
PART NUMBER NESG2107M33-A NESG2107M33-T3-A QUANTITY 50 pcs (Non reel) 10 kpcs/reel SUPPLYING FORM * 8 mm wide embossed taping * Pin 2 (Base) face the perforatio... |
Description |
NECs NPN SILICON TRANSISTOR
|
File Size |
235.08K /
4 Page |
View
it Online |
Download Datasheet |
|
|
|
Duracell CEL[California Eastern Labs]
|
Part No. |
NESG260234-T1 NESG260234 NESG260234-T1-AZ
|
OCR Text |
...AMPLIFICATION (1 W) 3-PIN POWER minimold (34 PKG)
FEATURES
* This product is suitable for medium output power (1 W) amplification Pout = 30 dBm TYP. @ VCE = 6 V, Pin = 15 dBm, f = 460 MHz Pout = 30 dBm TYP. @ VCE = 6 V, Pin = 20 dBm, f ... |
Description |
NPN SILICON GERMANIUM RF TRANSISTOR
|
File Size |
240.09K /
11 Page |
View
it Online |
Download Datasheet |
|
|
|
CEL[California Eastern Labs]
|
Part No. |
NESG3031M05-T1 NESG3031M05
|
OCR Text |
...FLAT-LEAD 4-PIN THIN-TYPE SUPER minimold (M05, 2012 PKG)
FEATURES
* The device is an ideal choice for low noise, high-gain amplification NF = 0.6 dB TYP., Ga = 16.0 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 2.4 GHz NF = 0.95 dB TYP., Ga = 10.... |
Description |
NPN SILICON GERMANIUM RF TRANSISTOR
|
File Size |
217.66K /
9 Page |
View
it Online |
Download Datasheet |
|
Price and Availability
|