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  lateral Datasheet PDF File

For lateral Found Datasheets File :: 1948    Search Time::0.688ms    
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    FDN335N FDN335

Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
Part No. FDN335N FDN335
OCR Text ...EIA/Jedec RS-481 rotational and lateral movement requirements (see sketches A, B, and C). 20 deg maximum Typical component cavity center line 0.5mm maximum B0 20 deg maximum component rotation 0.5mm maximum Sketch A (Side or Fr...
Description N-Channel 2.5V Specified PowerTrenchTM MOSFET

File Size 208.52K  /  8 Page

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    Motorola
Part No. MRF1517
OCR Text .... N-Channel Enhancement-Mode lateral MOSFETs MRF1517T1 520 MHz, 8 W, 7.5 V lateral N-CHANNEL BROADBAND RF POWER MOSFET CASE 466-02, STYLE 1 (PLD-1.5) PLASTIC MAXIMUM RATINGS Rating Drain-Source Voltage (1) Gate-Source Voltage ...
Description MRF1517T1 RF Power Field Effect Transistor N-Channel Enhancement-Mode lateral MOSFETs
From old datasheet system

File Size 231.18K  /  16 Page

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    MRF187 MRF187R3 MRF187SR3

MOTOROLA[Motorola, Inc]
Part No. MRF187 MRF187R3 MRF187SR3
OCR Text lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices make them ideal for large-signal, common source amplifier applications i...
Description RF POWER FIELD EFFECT TRANSISTORS

File Size 355.80K  /  8 Page

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    MOTOROLA[Motorola, Inc]
MOTOROLA [Motorola, Inc]
Part No. MRF373ASR1 MRF373AR1 MRF373A
OCR Text ...ors N-Channel Enhancement-Mode lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of these devices make them ideal for large-signal, ...
Description MRF373AR1, MRF373ALSR1 470-860 MHz, 75 W, 32 V lateral N-Channel Broadband RF Power MOSFETs
RF POWER FIELD EFFECT TRANSISTORS

File Size 332.33K  /  8 Page

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    Freescale Semiconductor
Part No. MRF6P3300HR5
OCR Text ... n - channel enhancement - mode lateral mosfets designed for broadband commercial and industrial applications with frequencies from 470 to 860 mhz. the high gain and broadband performance of this device make it ideal for large - signal, com...
Description (MRF6P3300HR3 / MRF6P3300HR5) RF Power Field Effect Transistor

File Size 1,028.89K  /  24 Page

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    FDC640P

Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
Part No. FDC640P
OCR Text ...EIA/Jedec RS-481 rotational and lateral movement requirements (see sketches A, B, and C). 20 deg maximum Typical component cavity center line 0.5mm maximum B0 20 deg maximum component rotation 0.5mm maximum Sketch A (Side or Fr...
Description P-Channel 2.5V Specified PowerTrenchTM MOSFET

File Size 253.60K  /  8 Page

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    STEVAL-TDR023V1

STMicroelectronics
Part No. STEVAL-TDR023V1
OCR Text lateral mosfets features excellent thermal stability frequency: 460 - 540 mhz supply voltage: 13.6 v output power: 20 w gain: 13.3 db typ. efficiency: 51% - 66% load mismatch: 20:1 beo free amplifier in compliance with the 2002/95...
Description RF power amplifier using 1 x PD55025-E N-channel enhancement-mode lateral MOSFETs

File Size 503.46K  /  8 Page

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    STEVAL-TDR016V1

STMicroelectronics
Part No. STEVAL-TDR016V1
OCR Text lateral mosfets features excellent thermal stability frequency: 155 - 165 mhz supply voltage: 20 v output power: 30 w power gain: 14.7 0.3 db efficiency: 60% - 72% load mismatch: 20:1 beo free amplifier application marine rad...
Description RF power amplifier using 1 x PD55015E N-channel enhancement-mode lateral MOSFETs

File Size 226.99K  /  13 Page

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    Motorola
Part No. MRF282
OCR Text lateral mosfets designed for class a and class ab pcn and pcs base station applications with frequencies up to 2600 mhz. suitable for fm, tdma, cdma, and multicarrier amplifier applications. ? specified two?tone performance @ 2000 mhz, 26 v...
Description MRF282SR1, MRF282ZR1 2000 MHz, 10 W, 26 V lateral N-Channel Broadband RF Power MOSFETs

File Size 346.51K  /  12 Page

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    MRF284S MRF284

MOTOROLA[Motorola, Inc]
MOTOROLA[Motorola Inc]
Part No. MRF284S MRF284
OCR Text ...r N-Channel Enhancement-Mode lateral MOSFETs MRF284 MRF284S 30 W, 2000 MHz, 26 V lateral N-CHANNEL BROADBAND RF POWER MOSFETs CASE 360B-01, STYLE 1 (MRF284) CASE 360C-03, STYLE 1 (MRF284S) MAXIMUM RATINGS Rating Drain-Sourc...
Description RF Power Field-Effect Transistors

File Size 132.46K  /  12 Page

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For lateral Found Datasheets File :: 1948    Search Time::0.688ms    
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