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    GS8161ZV36C GS8161ZV18C

GSI Technology
Part No. GS8161ZV36C GS8161ZV18C
OCR Text ...or other pipelined read/double late write or flow through read/ single late write srams, allow u tilization of all available bus bandwidth by eliminating the need to insert deselect cycles when the device is switched fr om read to write...
Description 18Mb Burst SRAMs

File Size 567.34K  /  30 Page

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    CY7C1332AV25 CY7C1332AV25-200BGC CY7C1332AV25-200BGXC CY7C1332AV25-250BGC CY7C1332AV25-250BGXC CY7C1330AV25-200BGC CY7C1

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Cypress Semiconductor
Part No. CY7C1332AV25 CY7C1332AV25-200BGC CY7C1332AV25-200BGXC CY7C1332AV25-250BGC CY7C1332AV25-250BGXC CY7C1330AV25-200BGC CY7C1330AV25-200BGXC CY7C1330AV25 CY7C1330AV25-250BGC CY7C1330AV25-250BGXC
OCR Text late Write Features * Fast clock speed: 250, 200 MHz * Fast access time: 2.0, 2.25 ns * Synchronous Pipelined Operation with Self-timed late Write * Internally synchronized registered outputs eliminate the need to control OE * 2.5V core s...
Description 18-Mbit (512K x 36/1Mbit x 18) Pipelined Register-Register late Write

File Size 396.30K  /  19 Page

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    GS8321ZV18 GS8321ZV32 GS8321ZV36E-250 GS8321ZV36E-225 GS8321ZV36E-250I GS8321ZV18E-133 GS8321ZV18E-133I GS8321ZV18E-150

GSI[GSI Technology]
ETC
Part No. GS8321ZV18 GS8321ZV32 GS8321ZV36E-250 GS8321ZV36E-225 GS8321ZV36E-250I GS8321ZV18E-133 GS8321ZV18E-133I GS8321ZV18E-150 GS8321ZV18E-150I GS8321ZV18E-166 GS8321ZV18E-166I GS8321ZV18E-200 GS8321ZV18E-200I GS8321ZV18E-225 GS8321ZV18E-225I GS8321ZV18E-250 GS8321ZV32E-133 GS8321ZV32E-133I GS8321ZV32E-150 GS8321ZV32E-150I GS8321ZV32E-166 GS8321ZV32E-166I GS8321ZV32E-200 GS8321ZV32E-200I GS8321ZV32E-225 GS8321ZV32E-225I GS8321ZV32E-250 GS8321ZV32E-250I GS8321ZV36E-133 GS8321ZV36E-133I GS8321ZV36E-150 GS8321ZV36E-150I GS8321ZV36E-166 GS8321ZV36E-166I GS8321ZV36E-200 GS8321ZV36E-200I GS8321ZV36E-225I GS8321ZV36
OCR Text ... or other pipelined read/double late write or flow through read/ single late write SRAMs, allow utilization of all available bus bandwidth by eliminating the need to insert deselect cycles when the device is switched from read to write cycl...
Description 36Mb NBT SRAMs
36Mb Pipelined and Flow Through Synchronous NBT SRAM

File Size 554.67K  /  31 Page

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    Samsung Electronic
Part No. K7N327245M
OCR Text ... through / pipelined) , double late write ram x72 ordering informa tion org. part number mode vdd speed ft ; access time(ns) pipelined ; cycle time(mhz) pkg temp 2mx18 k7m321825m-q(h/f)c65/75/85 flowthrough 3.3 6.5/7.5/8.5ns q:100tqfp h...
Description 512Kx72-Bit Pipelined NtRAMData Sheet

File Size 470.11K  /  20 Page

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    Sony, Corp.
Part No. CXK77B3640GB
OCR Text late write hstl high speed synchronous sram (128k x 36 organization) description features r-r mode r-l, r-ft modes dc mode ? fast cycle/access time t khkh / t khqv t khkh / t khqv t khkh / t khqv cxk77b3640 -4a 3.8ns / 2.3ns 4.8ns / 4.8n...
Description 4Mb late Write HSTL High Speed Synchronous SRAM (128K x 36Bit)(4M位、写延迟、高速逻辑收发(HSTL)、高速同步静态RAM (128K x 36) 4Mb的后写入HSTL高速同步SRAM28K的x 36Bit)(4分位,写延迟,高速逻辑收发(HSTL),高速同步静态随机存储器28K的36位)

File Size 253.94K  /  27 Page

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    4CV100-000E

Communications & Power Industries, Inc.
Part No. 4CV100-000E
OCR Text late p late p late s creen p late drive output operation voltage c urrent voltage voltage c urrent p ower p ower (volts) ( a mps) (volts) (volts) ( a mps) (watts) (kilowatts) a b1 rf linear amplif...
Description RF linear amplifier

File Size 72.82K  /  1 Page

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    UPD4483362 UPD4483362GF-A75

NEC Corp.
NEC[NEC]
Part No. UPD4483362 UPD4483362GF-A75
OCR Text ...INTERFACE / REGISTER-REGISTER / late WRITE Description The PD4483362 is a 262,144 words by 36 bits synchronous static RAM fabricated with advanced CMOS technology using Full-CMOS six-transistor memory cell. The PD4483362 is suitable for...
Description 8M-BIT CMOS SYNCHRONOUS FAST STATIC RAM 256K-WORD BY 36-BIT HSTL INTERFACE / REGISTER-REGISTER / late WRITE

File Size 92.18K  /  16 Page

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    4CV100-000C

Communications & Power Industries, Inc.
Part No. 4CV100-000C
OCR Text late p late p late s creen p late drive output operation voltage c urrent voltage voltage c urrent p ower p ower (volts) ( a mps) (volts) (volts) ( a mps) (watts) (kilowatts) c rf amplifer 20,000 ...
Description RF amplifier

File Size 93.88K  /  1 Page

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    GSI Technology, Inc.
Part No. GS8162Z72C
OCR Text ...or other pipelined read/double late write or flow through read/single late write srams, allow utilization of all available bus bandwidth by eliminating the need to insert deselect cycles when the device is switched fr om read to write ...
Description 18Mb Pipelined and Flow Through Synchronous NBT SRAM 35.7流水线和流量,通过同步唑的SRAM

File Size 768.68K  /  31 Page

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    MCP3301T MCP330111

Microchip Technology
Part No. MCP3301T MCP330111
OCR Text ...characterization graphs that re late converter performance to v ref level. 3: v in = 0.1v to 4.9v @ 1 khz. 4: v dd = 5v dc 500 mv p-p @ 1 khz, see test circuit figure 1-4 . 5: maximum clock frequency specification must be met. 6: v ref...
Description 13-Bit Differential Input, Low Power A/D Converter with SPI Serial Interface

File Size 641.41K  /  38 Page

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