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SPH090G AN1336 LNC701PS PST3347U 2SC1706 F008B 0BAIR20 IRHM7150
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  angles. Datasheet PDF File

For angles. Found Datasheets File :: 5800    Search Time::1.75ms    
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    TSD2918 SD2918

ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
Part No. TSD2918 SD2918
OCR Text ... Load f = 30MHz Mismatch All Angles IMPEDANCE DATA FREQ . 30 MHz Z IN () 24.4 - j 13.4 Z DL () 28.8 + j 7.2 2/8 SD2918 TYPICAL PERFORMANCE Capacitance vs Drain-Source Voltage Maximum Thermal Resistance vs Case Temper...
Description RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs

File Size 100.63K  /  8 Page

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    TSD2931-10 SD2931-10

STMicroelectronics
Part No. TSD2931-10 SD2931-10
OCR Text ... V DD = 50 V Mismatch All Phase Angles IMPEDANCE DATA VGS SORTS A B C D E F G H J K L M N P Q 2.0 - 2.1 2.1 - 2.2 2.2 - 2.3 2.3 - 2.4 2.4 - 2.5 2.5 - 2.6 2.6 - 2.7 2.7 - 2.8 2.8 - 2.9 2.9 - 3.0 3.0 - 3.1 3.1 - 3.2 3.2 - 3.3 3.3 - 3.4 ...
Description RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs

File Size 91.42K  /  10 Page

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    TSD2931 SD2931

ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
Part No. TSD2931 SD2931
OCR Text ... V DD = 50 V Mismatch All Phase Angles IMPEDANCE DATA FREQ. 30 MHz 175 MHz Z IN () 1.7 - j 5.7 1.2 - j 2.0 Z DL () 6.8 + j 0.9 2.0 + j 2.4 2/4 SD2931 M174 (.500 DIA 4L N/HERM W/FLG) MECHANICAL DATA mm MIN. A B C D E F ...
Description RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs

File Size 46.90K  /  4 Page

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    TSD2932 SD2932

STMICROELECTRONICS[STMicroelectronics]
Part No. TSD2932 SD2932
OCR Text ... V DD = 50 V Mismatch All Phase Angles IMPEDANCE DATA FREQ . 175 MHz Z IN () 0.92 - j 0.14 Z DL () 3.17 + j 4.34 Measured Gate to Gate and Drain to Drain, respectively. 2/13 SD2932 Maximum Thermal Resistance vs Case ...
Description RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs

File Size 121.75K  /  13 Page

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    BT168BW BT168DW BT168EW BT168GW BT168W BT168WSERIES

PHILIPS[Philips Semiconductors]
NXP Semiconductors
Part No. BT168BW BT168DW BT168EW BT168GW BT168W BT168WSERIES
OCR Text ...wave; Tsp 112 C all conduction angles t = 10 ms t = 8.3 ms half sine wave; Tj = 25 C prior to surge t = 10 ms ITM = 2 A; IG = 10 mA; dIG/dt = 100 mA/s -40 B 2001 MAX. D 4001 E 5001 G 6001 UNIT V A A A A A2s A/s A V V W W C C VDRM, VRRM ...
Description Thyristors logic level for RCD/ GFI/ LCCB applications 晶闸管为民盟的逻辑电平/ GFI / LCCB应用

File Size 52.43K  /  7 Page

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    BT168 BT168B BT168D BT168E BT168G BT168SERIES

PHILIPS[Philips Semiconductors]
NXP Semiconductors
Part No. BT168 BT168B BT168D BT168E BT168G BT168SERIES
OCR Text ...ave; Tlead 83 C all conduction angles t = 10 ms t = 8.3 ms half sine wave; Tj = 25 C prior to surge t = 10 ms ITM = 2 A; IG = 10 mA; dIG/dt = 100 mA/s -40 B 2001 MAX. D 4001 0.5 0.8 8 9 0.32 50 1 5 5 2 0.1 150 125 E 5001 G 6001 UNIT V A A ...
Description Thyristors logic level for RCD/ GFI/ LCCB applications

File Size 42.96K  /  6 Page

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    LET9060C

意法半导
STMICROELECTRONICS[STMicroelectronics]
Part No. LET9060C
OCR Text ...D = 26 V IDQ = 250 mA ALL PHASE ANGLES IMPEDANCE DATA D ZDL Typical Input Impedance G Zin Typical Drain Load Impedance S FREQ. 925 MHz 945 MHz 960 MHz ZIN () TBD TBD TBD ZDL() TBD TBD TBD 2/5 LET9060C TYPICAL PERFORMANCE...
Description RF POWER TRANSISTORS Ldmos Enhanced Technology

File Size 35.68K  /  5 Page

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    LET9060S

STMICROELECTRONICS[STMicroelectronics]
Part No. LET9060S
OCR Text ... = 250 mA POUT = 60 W ALL PHASE ANGLES DYNAMIC (f = 925 - 960 MHz) Symbol P1dB GP D Test Conditions VDD = 26 V IDQ = 250 mA VDD = 26 V IDQ = 250 mA VDD = 26 V IDQ = 250 mA POUT = 60 W POUT = 60 W Min. Typ. 65 16 56 Max. Unit W dB % 2...
Description RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package

File Size 294.85K  /  10 Page

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    MP03HBT360-08 MP03HBT360-10 MP03HBT360-12 MP03HBT360-14 MP03HBT360-16 MP03HBT360-18 MP03HBN360-18 MP03HBP360-18 MP03HBN3

Dynex Semiconductor, Ltd.
Dynex Semiconductor Ltd.
Part No. MP03HBT360-08 MP03HBT360-10 MP03HBT360-12 MP03HBT360-14 MP03HBT360-16 MP03HBT360-18 MP03HBN360-18 MP03HBP360-18 MP03HBN360-16 MP03HBN360-14 MP03HBP360-08 MP03HBP360-10
OCR Text ...current at specified conduction angles, sine wave 50/60Hz Fig. 8 On-state power loss per arm vs on-state current at specified conduction angles, square wave 50/60Hz 100 90 Conduction angle 30 60 90 120 180 100 90 Maximum permiss...
Description Dual Thyristor, Thyristor/Diode Module 553 A, 1000 V, SCR
Dual Thyristor, Thyristor/Diode Module 553 A, 800 V, SCR
Dual Thyristor, Thyristor/Diode Module 560 A, 1400 V, SCR

File Size 261.78K  /  9 Page

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    MP04HBT490-24 MP04HBT490-26 MP04HBT490-28 MP04HBP490-28 MP04HBP490-26 MP04HBP490-24 MP04HBN490-28 MP04HBN490-24 MP04HBN4

Dynex Semiconductor, Ltd.
Dynex Semiconductor Ltd.
DYNEX[Dynex Semiconductor]
Part No. MP04HBT490-24 MP04HBT490-26 MP04HBT490-28 MP04HBP490-28 MP04HBP490-26 MP04HBP490-24 MP04HBN490-28 MP04HBN490-24 MP04HBN490-26 MP04---490
OCR Text ...current at specified conduction angles, sine wave 50/60Hz 90 80 70 60 50 40 30 20 10 0 100 30 60 90 120 180 Fig. 8 On-state power loss per arm vs on-state current at specified conduction angles, square wave 50/60Hz 90 80 70 60 50 40 30...
Description Dual Thyristor, Thyristor/Diode Module Advance Information 770 A, 2400 V, SCR
Circular Connector; MIL SPEC:MIL-C-26482, Series I, Solder; Body Material:Aluminum; Series:PT02; No. of Contacts:3; Connector Shell Size:12; Connecting Termination:Solder; Circular Shell Style:Box Mount Receptacle 770 A, 2400 V, SCR
Circular Connector; MIL SPEC:MIL-C-26482, Series I, Solder; Body Material:Aluminum; Series:PT02; No. of Contacts:8; Connector Shell Size:12; Connecting Termination:Solder; Circular Shell Style:Box Mount Receptacle; Gender:Male 770 A, 2600 V, SCR
Dual Thyristor, Thyristor/Diode Module Advance Information 770 A, 2800 V, SCR
PT 4C 4#16 SKT RECP
Dual Thyristor Thyristor/Diode Module Advance Information

File Size 201.54K  /  9 Page

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