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CEL[California Eastern Labs]
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| Part No. |
NE856M03-T1-a NE856M03 NE856M03-a
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| OCR Text |
...at VCB = 3 V, IE = 0, f = 1 MHz a a pF 0.7 UNITS GHz dB dB 7.0 80 MIN 3.0 NE856M03 2SC5432 M03 TYP 4.5 1.4 10.0 145 1.0 1.0 1.5 2.5 MaX
C...110.3 1.01 18 1 4.89e-9 4.37 10.08 1.0 8 0.03 3.32e-11 3.95 0.33 1.26 2 0.05 6.63 2.8e-12 1.3 0.5 1.... |
| Description |
NPN SILICON TRaNSISTOR
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| File Size |
102.44K /
4 Page |
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CEL[California Eastern Labs]
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| Part No. |
NESG2030M04-T2-a NESG2030M04 NESG2030M04-a NESG2030M04-T2
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| OCR Text |
...aCKaGE: SOT-343 footprint, with a height of only 0.59 mm Flat lead style for better RF performance
M04
DESCRIPTION
NEC's NESG2030M04 ...110.7 142.4 156.3 14.2 17.4 20.9 24.9 29.4 34.5 40.4 47.1 63.0 81.1 Rn/50 0.21 0.21 0.20 0.20 0.19 0... |
| Description |
NPN SiGe HIGH FREQUENCY TRaNSISTOR
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| File Size |
353.52K /
10 Page |
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it Online |
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California Eastern Laboratories
Duracell
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| Part No. |
UPa812T-T1-a
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| OCR Text |
a 2 mm x 1.25 mm package LOW NOISE FIGURE: NF = 1.4 dB TYP at 1 GHz HIGH GaIN: |S21E|2 = 12 dB TYP at 1 GHz HIGH GaIN BaNDWIDTH: fT = 7 GHz ...110 200 150 -65 to +150 PIN OUT 1. Collector Transistor 1 2. Base Transistor 2 3. Collector Transist... |
| Description |
NPN SILICON HIGH FREQUENCY TRaNSISTOR
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| File Size |
122.05K /
4 Page |
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Duracell
California Eastern Laboratories
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| Part No. |
UPa802T-T1-a
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| OCR Text |
a 2 mm x 1.25 mm package LOW NOISE FIGURE: NF = 1.4 dB TYP at 1 GHz HIGH GaIN: |S21E|2 = 12 dB TYP at 1 GHz HIGH GaIN BaNDWIDTH: fT = 7 GHz ...110 200 150 -65 to +150 TOTaL POWER DISSIPaTION vs. aMBIENT TEMPERaTURE
Total Power Dissipation, ... |
| Description |
NPN SILICON HIGH FREQUENCY TRaNSISTOR
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| File Size |
163.48K /
10 Page |
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it Online |
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CEL[California Eastern Labs]
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| Part No. |
NESG3031M14-T3-a NESG3031M14 NESG3031M14-a
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| OCR Text |
...MaTION
PaRT NUMBER NESG3031M14-a NESG3031M14-T3-a QUaNTITY 50 pcs (Non reel) 10 kpcs/reel SUPPLYING FORM * 8 mm wide embossed taping * Pin 1 (Collector), Pin 4 (Emitter) face the perforation side of the tape
Remark To order evaluation s... |
| Description |
NPN SiGe HIGH FREQUENCY TRaNSISTOR
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| File Size |
419.35K /
9 Page |
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it Online |
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Duracell
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| Part No. |
NE685M03-T1-a
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| OCR Text |
...rrent at v cb = 5 v, i e = 0 a 0.1 i ebo emitter cutoff current at v eb = 1 v, i c = 0 a 0.1 c re 3 feedback capacitance at v cb = 3 ...110 100 150 120 0 6 18 24 30 12 ne685m03 part number quantity ne685m03-a ne685m03-t1-a ordering info... |
| Description |
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| File Size |
202.43K /
4 Page |
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Duracell
CEL[California Eastern Labs]
California Eastern Laboratories, Inc.
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| Part No. |
NE661M04-T2-a NE661M04
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| OCR Text |
...aCKaGE: SOT-343 footprint, with a height of just 0.59 mm. Flat Lead Style for better RF performance. M04
NE661M04
DESCRIPTION
NEC's N...110.8 96.3 82.4 68.9 55.6 30.4 6.9 -14.4 -34.5 MaG 0.005 0.009 0.013 0.017 0.021 0.028 0.038 0.051 0... |
| Description |
NPN SILICON HIGH FREQUENCY TRaNSISTOR NPN硅高频晶体管
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| File Size |
146.08K /
10 Page |
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it Online |
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