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Fairchild Semiconductor, Corp.
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Part No. |
FDP054N10
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OCR Text |
... ( typ.)@ v gs = 10v, i d = 75a ? fast switching speed ? low gate charge ? high performance trench tec hnology for extremely low r ds(on) ? high power and current handling capability ? rohs compliant description this n-channel mosfet ... |
Description |
120 A, 100 V, 0.0055 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB ROHS COMPLIANT PACKAGE-3
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File Size |
227.23K /
8 Page |
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it Online |
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NXP Semiconductors N.V.
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Part No. |
BUK9512-55B BUK9512-55B-15
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OCR Text |
... figure 3 ; see figure 1 [1] --75a p tot total power dissipation t mb = 25 c; see figure 2 --157w static characteristics r dson drain-source on-state resistance v gs =10v; i d =25a; t j =25c -910m ? v gs =5v; i d =25a; t j =25c; see ... |
Description |
N-channel TrenchMOS logic level FET N沟道TrenchMOS逻辑电平场效应管 N-channel TrenchMOS logic level FET
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File Size |
158.56K /
14 Page |
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it Online |
Download Datasheet |
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SavantIC
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Part No. |
BUH315
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OCR Text |
...uration voltage i c =3a ;i b =0.75a 1.5 v v besat base-emitter saturation voltage i c =3a ;i b =0.75a 1.3 v i ces collector cut-off current v ce =1500v ; v be =0 0.2 ma i ebo emitter cut-off current v eb =5v; i c =0 0.1... |
Description |
SILICON POWER TRANSISTOR
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File Size |
174.57K /
3 Page |
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it Online |
Download Datasheet |
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Price and Availability
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