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MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
MH16S64BAMD-6 B99029
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| OCR Text |
6
1,073,741,824-BIT ( 16,777,216-WORD BY 64-BIT ) Synchronous DYNAMIC RAM
PRELIMINARY
Some of contents are subject to change without notice. DESCRIPTION
The MH16S64BAMD is 16777216 - word x 64-bit Synchronous DRAM module. This consist... |
| Description |
From old datasheet system
1,073,741,824-BIT ( 16,777,216-WORD BY 64-BIT ) Synchronous DYNAMIC RAM
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| File Size |
576.78K /
40 Page |
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Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
MH32V725BST-6 MH32V725BST-5
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| OCR Text |
6
HYPER PAGE MODE 2415919104 - BIT ( 33554432 - WORD BY 72 - BIT ) DYNAMIC RAM
DESCRIPTION
The MH32V725BST is 33554432-word x 72-bit dynamic ram stacked structural module. This consist of thirty-six industry standard 16M x 4 dynamic RA... |
| Description |
HYPER PAGE MODE 2415919104 - BIT ( 33554432 - WORD BY 72 - BIT ) DYNAMIC RAM
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| File Size |
133.88K /
22 Page |
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Mosel Vitelic, Corp.
Macronix International Co., Ltd.
Mosel Vitelic Corp
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| Part No. |
V54C316162V-6 V54C316162V-55 V54C316162V-7
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| OCR Text |
...3 5 5
-55
183 3 5.5 5.3
-6
166 3 6 5.5
-7
143 3 7 5.5
Unit
MHz clocks ns ns
Features
Description
The V54C316162V is a...Bit
Test Mode
A8 0 A7 0 Mode Mode Reg Set
Burst Type
A3 0 1 Type Sequential Interleave
CA... |
| Description |
200/183/166/143 MHz 3.3 VOLT, 4K REFRESH ULTRA HIGH PERFORMANCE 1M X 16 SDRAM 2 BANKS X 512Kbit X 16 200/183/166/143 MHz.3伏，刷新4K的超高性能100万16 SDRAMX 512Kbit × 16
MORAY EEL 200/183/166/143 MHz.3伏，刷新4K的超高性能100万16 SDRAM组X 512Kbit × 16
200/183/166/143 MHz 3.3 VOLT/ 4K REFRESH ULTRA HIGH PERFORMANCE 1M X 16 SDRAM 2 BANKS X 512Kbit X 16
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| File Size |
152.63K /
21 Page |
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Hitachi Semiconductor
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| Part No. |
HM514100DLS-6 HM514100DLS-7 HM514100DLS-8
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| OCR Text |
... access time package hm514100ds-6 hm514100ds-7 hm514100ds-8 60 ns 70 ns 80 ns 300-mil 26-pin plastic soj (cp-26/20d) hm514100dls-6 hm514100d...bit test function controlled by control address bits - - - ra10, ca10 and ca0. this test mode ope... |
| Description |
4,194,304-word x 1-bit dynamic RAM, 60ns
4,194,304-word x 1-bit dynamic RAM, 70ns
4,194,304-word x 1-bit dynamic RAM, 80ns
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| File Size |
223.40K /
27 Page |
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Hitachi,Ltd.
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| Part No. |
HM51W17805LJ-6 HM51W17805LJ-7 HM51W17805LTS-6
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| OCR Text |
...ckage hm51w17805j-5 hm51w17805j-6 hm51w17805j-7 50 ns 60 ns 70 ns 400-mil 28-pin plastic soj (cp-28da) hm51w17805lj-5 hm51w17805lj -6 hm51w17805lj -7 50 ns 60 ns 70 ns hm51w17805s-5 hm51w17805s-6 hm51w17805s-7 50 ns 60 ns 70 ns 300-mil 28-p... |
| Description |
16 M EDO DRAM(2-Mword*8-bit) 2K Refresh
16M EDO DRAM(2-Mword*8-bit)2k Refresh 动态随机存取存储器62-mword*8位）2刷新
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| File Size |
430.53K /
33 Page |
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CYPRESS SEMICONDUCTOR CORP
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| Part No. |
MT58L128L32D1F-6
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| OCR Text |
...s/cycle/mhz) 3.5ns/6ns/166 mhz -6 4.0ns/7.5ns/133 mhz -7.5 5ns/10ns/100 mhz -10 configurations 256k x 18 mt58l256l18d1 128k x 32 mt58l128l...bit burst counter. all synchronous inputs pass through registers controlled by a positive-edge-trigg... |
| Description |
128K X 32 CACHE SRAM, 3.5 ns, PBGA165
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| File Size |
437.01K /
26 Page |
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Price and Availability
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