|
|
|
FAIRCHILD[Fairchild Semiconductor]
|
Part No. |
SSF8N90A
|
OCR Text |
...V,TC=125 C VGS=10V,ID=2.75A VDS=50v,ID=2.75A
4 O* 4 O
2070 2690
VGS=0V,VDS=25V,f =1MHz See Fig 5 VDD=450v,ID=8a, RG=10 See Fig 13 VDS=720V,VGS=10V, ID=8a See Fig 6 & Fig 12
45 OO 45 OO
Source-Drain Diode Ratings and Characteris... |
Description |
Advanced Power MOSFET
|
File Size |
248.92K /
7 Page |
View
it Online |
Download Datasheet |
|
|
|
TOKO, Inc. Fuji Electric
|
Part No. |
FAP-450
|
OCR Text |
... C T stg -55 ~ +150 C *1) VCC = 50v; L = 7mH; IAS = 14A; RG = 50 ; Starting Tch = 25C (See Fig. 1 & 2) *2) Repetitive Rating : Pulse Width l...8a VGS=10V ID=8a VDS=25V VDS=25V VGS=0V f=1MHz VCC=250v VGS=10V RG = 6,1W RD = 20 Tch=25C L = 100H V... |
Description |
TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 14A I(D) | TO-247VAR 晶体管| MOSFET的| N沟道| 500V五(巴西)直|4A条(丁)|47VAR N-channel MOS-FET(500V, 0,38Ω, 14A, 190W) N-channel MOS-FET(500V, 0,38楼?, 14A, 190W)
|
File Size |
221.16K /
3 Page |
View
it Online |
Download Datasheet |
|
|
|
Cystech Electonics Corp...
|
Part No. |
MTB190P10J3
|
OCR Text |
..., 2 - 19.4 29.1 ns v ds =-50v, i d =-1a, v gs =-10v, r g =6 ciss - 742 - coss - 48 - crss - 38 - pf v gs =0v, v ds =...8a, v gs =0v trr - 24.6 36.9 ns qrr - 31 - nc i f =-8a, di f /dt=100a/ s note : *1.puls... |
Description |
P-Channel Enhancement Mode Power MOSFET
|
File Size |
445.21K /
9 Page |
View
it Online |
Download Datasheet |
|
|
|
SEMIWELL[SemiWell Semiconductor]
|
Part No. |
SFP840
|
OCR Text |
...e 2. L = 18.5mH, IAS =8a, VDD = 50v, RG = 0 , Starting TJ = 25C 3. ISD 10A, di/dt 300A/us, VDD BVDSS, Starting TJ = 25C 4. Pulse Test : Pulse Width 300us, Duty Cycle 2% 5. Essentially independent of operating temperature.
Parameter
... |
Description |
125W Power MOSFET, 500V Vdss, 8a Id, 0.85Om Rds N-Channel MOSFET
|
File Size |
870.98K /
7 Page |
View
it Online |
Download Datasheet |
|
|
|
Infineon Technologies A...
|
Part No. |
IPA80R460CE
|
OCR Text |
... as - - 470 mj i d =2.2a; v dd =50v; see table 10 avalanche energy, repetitive e ar - - 0.20 mj i d =2.2a; v dd =50v; see table 10 avalanche...8a, r g =7.5 w ;seetable9 rise time t r - 15 - ns v dd =400v, v gs =10v, i d =10.8a, r g =7.5 w... |
Description |
High peak current capability
|
File Size |
1,217.02K /
15 Page |
View
it Online |
Download Datasheet |
|
Price and Availability
|