5.0a 1200v pdf Datasheet P15 Full Text Search --- IC-ON-LINE


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5.0a 1200v Datasheet PDF File

For 5.0a 1200v Found Datasheets File :: 623 Search Time::2.328ms
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				Infineon Technologies A... Infineon Technologies AG
Part No.	IKW40T120 Q67040-S4520
OCR Text	... G E = 15 V , I C = 40 A T j =2 5 C T j =1 2 5 C T j =1 5 0 C Diode forward voltage VF V G E = 0V , I F = 4 0 A T j =2 5 C T j =1 2 5 C T j ...0A 10Hz 100Hz 1kHz 10kHz 100kHz 10V 100V 1000V f, SWITCHING FREQUENCY Figure...
Description	LOW LOSS DUOPACK : IGBT IN TRENCH AND FIELDSTOP TECHNOLOGY WITH SOFT, FAST RECOVERY ANTI-PARAALEL EMCON HE DIODE IGBTs & DuoPacks - 40A 1200v TO247 IGBT Diode
File Size	447.79K / 15 Page	View it Online	Download Datasheet

				IRF[International Rectifier] International Rectifier, Corp.
Part No.	HFA16PB120
OCR Text	... Qrr (typ.)= 260nC IRRM(typ.) = 5.8A 3 ANODE 2 4 2 Benefits * Reduced RFI and EMI * Reduced Power Loss in Diode and Switching Tra...0A, dif/dt = 200A/s, VR = 30V 90 135 ns TJ = 25C 164 245 TJ = 125C IF = 16A 5.8 10 TJ = 25C A 8.3 15...
Description	1200v 16A HEXFRED Discrete Diode in a TO-247 (2 LEAD) package Ultrafast, Soft Recovery Diode HEXFRED HEXFREDTM Ultrafast, Soft Recovery Diode Ultrafast/ Soft Recovery Diode HEXFRED XC95216-15HQ208I - NOT RECOMMENDED for NEW DESIGN 超快，软恢复二极管HEXFRED二极
File Size	159.79K / 6 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRGPH30MD2
OCR Text	...0.24 -- 6 (0.21) Max. 1.2 2.5 -- 40 -- Units C/W g (oz) Revision 2 C-477 To Order Previous Datasheet Index Next D...0A V GE = 15V -- 4.9 -- V IC = 15A -- 3.6 -- IC = 9.0A, T J = 150C 3.0 -- 5.5 VCE = VGE, IC = 250A -...
Description	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY(Vces=1200v, @Vge=15V, Ic=9.0A) INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY(Vces=1200v @Vge=15V Ic=9.0A)
File Size	69.28K / 2 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRGPH30S
OCR Text	...- -- V VGE = 0V, IC = 1.0A -- 1.5 -- V/C VGE = 0V, IC = 1.0mA -- 2.0 3.0 IC = 13A -- 2.8 -- V IC = 22A See Fig. 2, 5 -- 2.6 -- IC = 13A, TJ = 150C Gate Threshold Voltage 3.0 -- 5.5 VCE = VGE, IC = 250A Temperature Coeff. of Threshold Voltag...
Description	INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200v @Vge=15V Ic=13A) INSULATED GATE BIPOLAR TRANSISTOR(VCES=1200v, @VGE=15V, IC=13A)
File Size	66.81K / 2 Page	View it Online	Download Datasheet

				FUJI ELECTRIC HOLDINGS CO., LTD. FUJI[Fuji Electric]
Part No.	7MBP50RA-120
OCR Text	...C 15 150 -20 100 -40 125 2500 3.5 3.5 Units IGBT IPM 1200v 6x50A+Chopper n Outline Drawing Min. 0 0 200 0 V A W A W V mA V mA...0A, Case Temp. Surface Of IGBT Chip Tj=125C Tj=125C Tj=25C Min. 3 10 1.00 1.25 110 20 150 20 75 38 1...
Description	Intelligent Power Module ( R-Series )
File Size	330.73K / 7 Page	View it Online	Download Datasheet

				Fuji Electric
Part No.	6MBP25RA120
OCR Text	... VALM 3 IALM 4 Tstg Top Viso *5 Rating Min. 0 0 200 0 0 0 0 -40 -20 Max. 900 1000 800 1200 25 50 25 198 150 20 Vz 1 Vcc 15 125 100 AC2.5 3...0A, Case temperature surface of IGBT chips Tj=125C Tj=25C IGBT-IPM Fig.2 Tj=25C Fig.3 ...
Description	IGBT-IPM(1200v/25A)
File Size	349.04K / 7 Page	View it Online	Download Datasheet

				Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
Part No.	HGT1S11N120CNS HGTP11N120CN HGTG11N120CN HGT1S11N12
OCR Text	....8 10.4 100 130 MAX 250 3 2.4 3.5 250 120 150 UNITS V V A A mA V V V nA A V nC nC Collector to Emitter Breakdown Voltage Emitter to Colle...0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement of Power Device Turn...
Description	43A, 1200v, NPT Series N-Channel IGBT 43 A, 1200 V, N-CHANNEL IGBT, TO-263AB Aluminum Electrolytic Radial Leaded General Purpose Capacitor; Capacitance: 3300uF; Voltage: 25V; Case Size: 16x25 mm; Packaging: Bulk 43 A, 1200 V, N-CHANNEL IGBT, TO-220AB 43A/ 1200v/ NPT Series N-Channel IGBT 43A 1200v NPT Series N-Channel IGBT
File Size	135.28K / 7 Page	View it Online	Download Datasheet

				Intersil, Corp. INTERSIL[Intersil Corporation]
Part No.	HGT1S1N120BNDS HGTP1N120BND HGT1S1N120BNDS9A
OCR Text	5.3A, 1200v, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTP1N120BND and the HGT1S1N120BNDS are Non-Punch Through (NP...0A VGE = 15V TC = 25oC TC = 150oC Gate to Emitter Threshold Voltage Gate to Emitter Leakage Cu...
Description	5.3A, 1200v, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode(5.3A, 1200v,NPT系列N沟道绝缘栅双极型晶体管（带反并行超快速二极管 5.3 A, 1200 V, N-CHANNEL IGBT, TO-263AB 5.3A/ 1200v/ NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
File Size	74.80K / 7 Page	View it Online	Download Datasheet

				http:// IRF[International Rectifier]
Part No.	IRGPH50FD2
OCR Text	....1 2.9 IC = 25A V GE = 15V -- 2.5 -- V IC = 45A See Fig. 2, 5 -- 3.0 -- IC = 25A, T J = 150C 3.0 -- 5.5 VCE = VGE, IC = 250A -- -14 -- mV/C ...0A I RRM - (A) trr - (ns) IF = 32A 20 I F = 32A I F = 16A I F = 8.0A 100 10 0 1...
Description	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY(Vces=1200v @Vge=15V Ic=25A) INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY(Vces=1200v, @Vge=15V, Ic=25A)
File Size	387.89K / 8 Page	View it Online	Download Datasheet

				INTERSIL[Intersil Corporation] http://
Part No.	HGTG30N120CN HGTG30N120D2
OCR Text	...mA VGE = 20V IC = IC90, VCE = 0.5 BVCES IC = IC90, VCE = 0.5 BVCES VGE = 15V VGE = 20V TC = TC = TC = TC = +25oC +125oC +25oC +125oC MIN 120...0A) The HGTG20N100D2 was tested per JEDEC standard No. 24-1 Method for Measurement of Power Device T...
Description	30A/ 1200v N-Channel IGBT 30A, 1200v N-Channel IGBT 75A 1200v NPT Series N-Channel IGBT
File Size	40.16K / 5 Page	View it Online	Download Datasheet

For 5.0a 1200v Found Datasheets File :: 623 Search Time::2.328ms
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