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PROTEC[Protek Devices]
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Part No. |
CX12LC CX12
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OCR Text |
... CAPACITANCE
12 V 200mA 20kV 3000a (8/20s) 5A @ 30MHz @ 200MHz -40 to +85C < 10 ns
@ 0V, 1 MHz C pF 200 25
FIGURE 4 PULSE WAVE FORM
120
IPP - Peak Pulse Current - % Of IPP
100 80 60 40 20 0
t f
Peak Value IPP -t e
TES... |
Description |
COAXIAL PROTECTOR
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File Size |
68.00K /
3 Page |
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it Online |
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CENTRAL[Central Semiconductor Corp]
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Part No. |
CP287
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OCR Text |
...0 MILS Al - 45,000A Ti/Ni/Ag - (3000a, 10,000A, 10,000A)
GEOMETRY GROSS DIE PER 4 INCH WAFER 974 PRINCIPAL DEVICE TYPES MJE13007
145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com
R... |
Description |
Power Transistor 8.0 Amp NPN Silicon Power Transistor Chip
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File Size |
36.64K /
1 Page |
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it Online |
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Dynex Semiconductor Ltd. DYNEX[Dynex Semiconductor]
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Part No. |
GP401DDM18
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OCR Text |
...= 400A, VR = 50% VCES, dIF/dt = 3000a/s Test Conditions IC = 400A VGE = 15V VCE = 900V RG(ON) = RG(OFF) = 2.2 L ~ 100nH Min. Typ. 900 330 180 500 200 200 80 250 70 Max. 1100 400 250 650 400 230 100 Units ns ns mJ ns ns mJ C A mJ
Tcase = ... |
Description |
OPTOISOLATOR W/BASE SMD Hi-Reliability Dual Switch Low VCE(SAT) IGBT Module Advance Information
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File Size |
94.75K /
7 Page |
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it Online |
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DYNEX[Dynex Semiconductor] Dynex Semiconductor, Ltd.
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Part No. |
GP401DDS18
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OCR Text |
...= 400A, VR = 50% VCES, dIF/dt = 3000a/s Test Conditions IC = 400A VGE = 15V VCE = 900V RG(ON) = RG(OFF) = 2.2 L ~ 100nH Min. Typ. 900 330 180 500 200 200 80 250 70 Max. 1100 400 250 650 400 230 100 Units ns ns mJ ns ns mJ C A mJ
Tcase = ... |
Description |
Low VCE(SAT) Dual Switch IGBT Module Preliminary Information Low VCE(SAT) Dual Switch IGBT Module Preliminary Information 400 A, 1800 V, N-CHANNEL IGBT
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File Size |
159.60K /
11 Page |
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it Online |
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DYNEX[Dynex Semiconductor]
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Part No. |
GP800NSS33
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OCR Text |
...IF = 800A, VR = 1800V, dIF/dt = 3000a/s-1 Min. Typ. 3.4 1.1 1.5 1.1 0.5 1.5 800 650 0.7 Max. Units s s J s s J C A J
4/9
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www... |
Description |
Single Switch IGBT Module Preliminary Information
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File Size |
92.19K /
9 Page |
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it Online |
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Dynex Semiconductor, Ltd. DYNEX[Dynex Semiconductor]
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Part No. |
GP801DCM18
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OCR Text |
...= 800A, VR = 50% VCES, dIF/dt = 3000a/s Test Conditions IC = 800A VGE = 15V VCE = 900V RG(ON) = RG(OFF) = 2.2 L ~ 100nH Min. Typ. 1200 300 600 400 250 450 300 525 190 Max. 1400 400 700 550 350 550 400 Units ns ns mJ ns ns mJ C A mJ
4/10
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Description |
B Series/ Female Solder 800 A, 1800 V, N-CHANNEL IGBT Hi-Reliability Chopper Switch Low VCESAT IGBT Module
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File Size |
158.09K /
10 Page |
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it Online |
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DYNEX[Dynex Semiconductor]
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Part No. |
GP801DCS18
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OCR Text |
...= 800A, VR = 50% VCES, dIF/dt = 3000a/s Test Conditions IC = 800A VGE = 15V VCE = 900V RG(ON) = RG(OFF) = 2.2 L ~ 100nH Min. Typ. 1200 300 600 400 250 450 300 525 190 Max. 1400 400 700 550 350 550 400 Units ns ns mJ ns ns mJ C A mJ
4/10
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Description |
Chopper Switch Low VCESAT IGBT Module
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File Size |
168.98K /
10 Page |
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it Online |
Download Datasheet |
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Dynex Semiconductor Ltd. DYNEX[Dynex Semiconductor]
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Part No. |
GP801DDM18
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OCR Text |
...= 800A, VR = 50% VCES, dIF/dt = 3000a/s Test Conditions IC = 800A VGE = 15V VCE = 900V RG(ON) = RG(OFF) = 2.2 L ~ 100nH Min. Typ. 1200 300 600 400 250 450 300 525 190 Max. 1400 400 700 550 350 550 400 Units ns ns mJ ns ns mJ C A mJ
4/10
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Description |
Hi-Reliability Dual Switch Low VCESAT IGBT Module
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File Size |
141.87K /
10 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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