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MOTOROLA INC
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| Part No. |
MCM69R536ZP4.4R
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| OCR Text |
... 7h (c) 1d, 2d, 1e, 2e, 2f, 1g, 2g, 1h, 2h (d) 1k, 2k, 1l, 2l, 2m, 1n, 2n, 1p, 2p dqx i/o synchronous data i/o. 4f g input output enable: as...3g, 3l (a), (b), (c), (d) sbx input synchronous byte write enable: enables writes to byte x in conju... |
| Description |
32K X 36 LATE-WRITE SRAM, 2.2 ns, PBGA119
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| File Size |
142.54K /
20 Page |
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KOA Speer Electronics
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| Part No. |
PSN
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| OCR Text |
... m: 20% (e24) 500~500m 1k~1g 2k~2g 3k~3g 4k~4g 5k~5g 6k~6g 500~500m 1k~1g 1.5k~1.5g 2.5k~2.5g 2.5k~2.5g 500~500m 1k~1g 2k~2g 3k~3g 4k~4g 5k~5g 6k~6g 50~500k 100~1m 200~2m 300~3m 400~4m 10~800 10~400 15~1500 10~800 25~2500 15~1000 50~5000 25... |
| Description |
high voltage power resistors
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| File Size |
126.77K /
2 Page |
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Hanbit Electronics Co.,Ltd.
Hanbit Electronics Co., Ltd.
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| Part No. |
DOM40K3R1.5G DOM40K3R032 DOM40K3R512 DOM40K3R096
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| OCR Text |
... 128, 192, 256, 512, 1g, 1.5g, 2g, 3g mb and up to 4gb mb formatted 40pin type . by optimizing flash memory management, t he life of this hfdom40k3r series can be extended to its maximum level. because the ecc function is included, the... |
| Description |
40Pin Flash Disk Module Min.16MB ~ Max.4GB, True IDE Interface Mode, 3.3V / 5.0V Operating 40Pin盘模块Min.16MBMax.4GB，真正的IDE接口模式3.3 / 5.0V工作
40Pin Flash Disk Module Min.16MB ~ Max.4GB, True IDE Interface Mode, 3.3V / 5.0V Operating 40Pin盘模块Min.16MBMax.4GB，真正的IDE接口模式.3 / 5.0V工作
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| File Size |
241.26K /
30 Page |
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Samsung semiconductor
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| Part No. |
K7Q161864B K7Q161864B-FC16 K7Q163664B K7Q163664B-FC16
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| OCR Text |
...1J,11G,10E,11D,11C,3B,3C,2D, 3F,2g,3J,3L,3M,2N 11P,10M,11L,11K,10J,11F,11E,10C,11B,2B,3D,3E, 2F,3g,3K,2L,3N,3P 4A 8A 7B, 5A 2H,10H 11H 5F,7F,5G,7G,5H,7H,5J,7J,5K,7K 4E,8E,4F,8F,4G,8G,3H,4H,8H,9H,4J,8J,4K,8K,4L,8L 2A,10A,4C,8C,4D-8D,5E-7E, 6... |
| Description |
512Kx36 & 1Mx18 QDR TM b4 SRAM
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| File Size |
341.45K /
17 Page |
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Samsung semiconductor
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| Part No. |
K7Q161854A K7Q161854A-FC10 K7Q161854A-FC13
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| OCR Text |
...1J,11G,10E,11D,11C,3B,3C,2D, 3F,2g,3J,3L,3M,2N 11P,10M,11L,11K,10J,11F,11E,10C,11B,2B,3D,3E, 2F,3g,3K,2L,3N,3P 4A 8A 7B, 5A 2H,10H 11H 5F,7F,5G,7G,5H,7H,5J,7J,5K,7K 4E,8E,4F,8F,4G,8G,3H,4H,8H,9H,4J,8J,4K,8K,4L,8L 2A,10A,4C,8C,4D-8D,5E-7E, 6... |
| Description |
512Kx36-bit, 1Mx18-bit QDR SRAM
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| File Size |
359.88K /
17 Page |
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SAMSUNG SEMICONDUCTOR CO. LTD.
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| Part No. |
K7Q163664B-FC16 K7Q161864B-FC16
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| OCR Text |
...1j,11g,10e,11d,11c,3b,3c,2d, 3f,2g,3j,3l,3m,2n data inputs q 0-17 11p,10m,11l,11k,10j,11f,11e,10c,11b,2b,3d,3e, 2f,3g,3k,2l,3n,3p data outputs w 4a write control r 8a read control bw 0 , bw 1 7b, 5a byte write control v ref 2h,10h input ref... |
| Description |
512Kx36 & 1Mx18 QDR TM b4 SRAM
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| File Size |
347.73K /
17 Page |
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Samsung semiconductor
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| Part No. |
K7J323682C K7J321882C
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| OCR Text |
...9j,10g,9f,10d,9c,9b,3b,3c,2d,3f,2g,3j,3l,3m,2n 1c,1d,2e,1g,1j,2k,1m,1n,2p data inputs q0-35 11p,10m,11l,11k,10j,11f,11e,10c,11b,9p,9n,10l 9k,9g,10f,9e,9d,10b,2b,3d,3e,2f,3g,3k,2l,3n 3p,1b,2c,1e,1f,2j,1k,1l,2m,1p data outputs r/w 4a read, wr... |
| Description |
1Mx36 & 2Mx18 DDR II SIO b2 SRAM
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| File Size |
410.17K /
18 Page |
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MOSDESIGN SEMICONDUCTOR CORP
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| Part No. |
M1350
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| OCR Text |
... T|aOLED IC
M1350
PATTERN 2g |PB|P|aCo{ ( Ot G4 SEC CtG8 SEC at AC 60Hz )
PATTERN 3g |PB|P|aI|Vo{( Ot G4 SEC CtG8 SEC at AC 60Hz )
1 2 3 4 5 6 7 8
PATTERN 4G Cm(c)u*t ( Ot G7.5 SEC CtG15 SEC at AC 60Hz )
1 2 3 4 5 6 7 8
4/6... |
| Description |
SYNC RGB LED IC
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| File Size |
90.30K /
6 Page |
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Samsung semiconductor
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| Part No. |
K7I323682C K7I321882C
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| OCR Text |
...,2d,3d,11d,3e,10e,11e,2f,3f 11f,2g,3g,11g,3j,10j,11j,3k,10k,11k,2l,3l,11l 3m,10m,11m,2n,3n,11n,3p,10p,11p data inputs outputs r/w 4a read, write control pin, read active when high ld 8a synchronous load pin, bus cycle sequence is to be de... |
| Description |
1Mx36 & 2Mx18 DDRII CIO b2 SRAM
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| File Size |
413.81K /
18 Page |
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it Online |
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Price and Availability
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