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  12.5-25v Datasheet PDF File

For 12.5-25v Found Datasheets File :: 37564    Search Time::2.171ms    
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    IRF9530NL IRF9530NS IRF9530NSTRR

IRF[International Rectifier]
Part No. IRF9530NL IRF9530NS IRF9530NSTRR
OCR Text ... = 25, IAS = -8.4A. (See Figure 12) TJ 175C ** When mounted on 1" square PCB (FR-4 or G-10 Material ). For recommended footprint and sol...5.5V - 5.0V BOTTOM - 4.5V 100 -ID , D rain-to-S ource C urrent (A ) 10 -ID , Drain-to-So...
Description Power MOSFET(Vdss=-100V/ Rds(on)=0.20ohm/ Id=-14A)
Power MOSFET(Vdss=-100V, Rds(on)=0.20ohm, Id=-14A)

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    IRF9530N

IRF[International Rectifier]
Part No. IRF9530N
OCR Text ... = 25, IAS = -8.4A. (See Figure 12) Pulse width 300s; duty cycle 2%. IRF9530N 100 VGS - 15V - 10V - 8.0V - 7.0V - 6.0V - 5.5V - 5.0V BOT TOM - 4.5V TO P 100 -ID , D rain-to-S ou rc e C urre nt (A ) 10 -ID , D rain-to-...
Description Power MOSFET(Vdss=-100V, Rds(on)=0.20ohm, Id=-14A)

File Size 109.25K  /  8 Page

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    IRF9530S IRF9530SMD

TT electronics Semelab Limited
SEME-LAB[Seme LAB]
Part No. IRF9530S IRF9530SMD
OCR Text ...2 3 25 250 100 -100 860 350 125 12.5 1.0 2 29 6.3 27 60 140 140 140 8 32 4 V / C W V S(W )W( VGS(th) Gate Threshold Voltage gfs IDSS IGSS IGSS Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf IS ISM VSD trr Qrr LD LS mA nA pF...
Description P-Channel Power MOSFET For HI-REL Application(Vdss:-100V,Id(cont):-8A,Rds(on):0.35Ω)(P沟道功率MOS场效应管,HI-REL应用(Vdss:-100V,Id(cont):-8A,Rds(on):0.35Ω))
P-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS

File Size 22.38K  /  2 Page

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    IRF9540NL IRF9540NS IRF9540NSTRL

IRF[International Rectifier]
Part No. IRF9540NL IRF9540NS IRF9540NSTRL
OCR Text ... = 25, I AS = -11A. (See Figure 12) TJ 175C ** When mounted on 1" square PCB (FR-4 or G-10 Material ). For recommended footprint and sol...5.5V - 5.0V BOTTOM - 4.5V 100 -ID , D rain-to-S ource C urrent (A ) 10 -ID , Drain-to-So...
Description Power MOSFET(Vdss=-100V/ Rds(on)=0.117ohm/ Id=-23A)
Power MOSFET(Vdss=-100V, Rds(on)=0.117ohm, Id=-23A)

File Size 183.18K  /  10 Page

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    IRF9540N IRF9540 IRF9540NPBF

IRF[International Rectifier]
Part No. IRF9540N IRF9540 IRF9540NPBF
OCR Text ...G = 25, IAS = -11A. (See Figure 12) Pulse width 300s; duty cycle 2%. IRF9540N 100 VGS - 15V - 10V - 8.0V - 7.0V - 6.0V - 5.5V - 5.0V BOT TOM - 4.5V TO P 100 -ID , D rain-to-S ou rc e C urre nt (A ) 10 -ID , Drain-to-S...
Description -100V Single P-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=-100V, Rds(on)=0.117ohm, Id=-23A)
Power MOSFET(Vdss=-100V/ Rds(on)=0.117ohm/ Id=-23A)

File Size 121.23K  /  8 Page

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    IRF9540 RF1S9540SM FN2282

Intersil, Corp.
INTERSIL[Intersil Corporation]
Part No. IRF9540 RF1S9540SM FN2282
OCR Text ...9540, RF1S9540SM -100 -100 -19 -12 -76 20 150 1 960 -55 to 175 300 260 UNITS V V A A A V W W/oC mJ oC oC oC Drain to Source Voltage (Not...5 - TYP 0.150 7 16 65 47 28 70 14 56 1100 550 250 3.5 MAX -4 -25 -250 100 0.200 20 100 70 70 9...
Description 19 A, 100 V, 0.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
19A, 100V, 0.200 Ohm, P-Channel Power MOSFETs 19 A, 100 V, 0.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB
19A/ 100V/ 0.200 Ohm/ P-Channel Power MOSFETs
From old datasheet system

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    IRF9620 FN2283

INTERSIL[Intersil Corporation]
Part No. IRF9620 FN2283
OCR Text ...rDS(ON)MAX, ID = -1.5A, (Figure 12) VDD = 0.5 x Rated BVDSS, ID -3.5A, RG = 50, RL = 26, for BVDSS = 200V RL = 20 for BVDSS = 150V (Figures 17, 18) MOSFET Switching Times are Essentially Independent of Operating Temperature VGS = -10V, ID ...
Description 3.5A/ 200V/ 1.500 Ohm/ P-Channel Power MOSFET
3.5A, 200V, 1.500 Ohm, P-Channel Power MOSFET
3.5A 200V 1.500 Ohm P-Channel Power MOSFET
From old datasheet system

File Size 57.96K  /  7 Page

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    IRF9Z14S IRF9Z14L IRF9Z14STRL IRF9Z14STRR

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF9Z14S IRF9Z14L IRF9Z14STRL IRF9Z14STRR
OCR Text ...00 V GS = -20V nA 100 VGS = 20V 12 ID = -6.7A 3.8 nC VDS = -48V 5.1 VGS = -10V, See Fig. 6 and 13 --- VDD = -30V --- I D = -6.7A ns --- RG = 24 --- RD = 4.0, See Fig. 10 Between lead, nH 7.5 --- and center of die contact 270 --- VGS = 0V ...
Description Power MOSFET(Vdss=-60V, Rds(on)=0.50ohm, Id=-6.7A) 功率MOSFET(减振钢板基本\u003d- 60V的,的Rds(on)\u003d 0.50ohm,身份证\u003d- 6.7A
Power MOSFET(Vdss=-60V/ Rds(on)=0.50ohm/ Id=-6.7A)
HEXFET? Power MOSFET
-60V Single P-Channel HEXFET Power MOSFET in a D2-Pak package

File Size 357.87K  /  10 Page

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    IRF9Z24L IRF9Z24S IRF9Z24STRR IRF9Z24STRL

IRF[International Rectifier]
Part No. IRF9Z24L IRF9Z24S IRF9Z24STRR IRF9Z24STRL
OCR Text ...G = 25, IAS = -11A. (See Figure 12) Pulse width 300s; duty cycle 2%. Uses IRF9Z24 data and test conditions I SD -11A, di/dt 140...5% [ISD ] *** V GS = 5.0V for Logic Level and 3V Drive Devices Fig 14. For P-Channel HEXFETS ...
Description -60V Single P-Channel HEXFET Power MOSFET in a D2-Pak package
Power MOSFET(Vdss=-60V/ Rds(on)=0.28ohm/ Id=-11A)
Power MOSFET(Vdss=-60V, Rds(on)=0.28ohm, Id=-11A)

File Size 307.08K  /  10 Page

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    IRF9Z24NL IRF9Z24NS IRF9Z24NSTRR IRF9Z24NSTRL

IRF[International Rectifier]
International Rectifier, Corp.
Part No. IRF9Z24NL IRF9Z24NS IRF9Z24NSTRR IRF9Z24NSTRL
OCR Text ...ature, for 10 seconds Max. -12 -8.5 -48 3.8 45 0.30 20 96 -7.2 4.5 -5.0 -55 to + 175 300 (1.6mm from case ) Units A W W W/C V mJ A mJ V/ns C Thermal Resistance Parameter RJC RJA Junction-to-Case Junction-to-Ambient ( PCB Mount...
Description -60V Single P-Channel HEXFET Power MOSFET in a TO-262 package
-55V Single P-Channel HEXFET Power MOSFET in a D2-Pak package
Power MOSFET(Vdss=-55V, Rds(on)=0.175ohm, Id=-12A) 功率MOSFET(减振钢板基本\u003d- 55V的,的Rds(on)\u003d 0.175ohm,身份证\u003d- 12A条)
Power MOSFET(Vdss=-55V/ Rds(on)=0.175ohm/ Id=-12A)

File Size 167.05K  /  10 Page

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For 12.5-25v Found Datasheets File :: 37564    Search Time::2.171ms    
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