...A
s s
TYPICAL RDS(on) = 0.12 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE AVALANCHE RUGGED TECHNOLOGY APPLICATION ORIENTED CHARACTERIZATION HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE
3 1 2
A...
Description
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR From old datasheet system
...ure, for 10 seconds
Max.
17 12 60 3.8 79 0.53 20 150 A 7.9 5.0 -55 to + 175 300 (1.6mm from case )
Units
A W W W/C V mJ mJ V/ns C
...Channel HEXFETS
www.irf.com 7
IRF530NS/L
D2Pak Package Outline
1 0.54 (.4 15) 1 0.29 (.4 05)...
Description
Power MOSFET(Vdss=100V/ Rds(on)=0.11ohm/ Id=17A) HEXFET Power MOSFET Power MOSFET(Vdss=100V, Rds(on)=0.11ohm, Id=17A)
...C MIN. - 55 MAX. 100 100 20 17 12 68 79 175 UNIT V V V A A A W C
AVALANCHE ENERGY LIMITING VALUES
Limiting values in accordance with th...channel TrenchMOSTM transistor
IRF530N
THERMAL RESISTANCES
SYMBOL PARAMETER Rth j-mb Rth j-a ...
...citance (pF)
600
C oss
12
400
Ciss
8
200
Crss
4
0 1 10 100
A
0 0 2 4 6
FOR TEST CIRCUIT SEE FIGURE 11...Channel
100
ISD , Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED BY R DS(on)
10
...
Description
20V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package Power MOSFET(Vdss= -20V)
...DM PD Symbol VDS VGS ID Max. 30 12 8.3 6.6 66 2.5 1.6 3.5 2.2 -55 to 150 C W A A Units V
A/S A/S A/S G
1 8
K/D K/D K/D K/D D
2
7
3
6
4
5
SO-8
Top View
Device Features (Max Values)
IRF7807D1
VDS RDS(on) Qg...
...DM PD Symbol VDS VGS ID Max. 30 12 8.3 6.6 66 2.5 1.6 3.7 2.3 -55 to 150 C W A A Units V
A/S A/S A/S G
1 8
K/D K/D K/D K/D D
2
7
3
6
4
5
SO-8
Top View
Device Features (Max Values)
IRF7807D2
VDS RDS(on) Qg...
Circular Connector; MIL SPEC:MIL-C-26482, Series I, Solder; Body Material:Aluminum; Series:SP06; Number of Contacts:5; Connector Shell Size:14; Connecting Termination:Solder; Circular Shell Style:Straight Plug; Body Style:Straight FETKY⑩MOSFET肖特基二极管 FETKY MOSFET / SCHOTTKY DIODE FETKY⑩ MOSFET / SCHOTTKY DIODE
...55 to 150 2.5 66 C A IRF7807 30 12 8.3 6.6 66 W A IRF7807A Units V
Thermal Resistance Parameter Maximum Junction-to-Ambient
RJA
Max. 50
Units C/W
www.irf.com
1
10/10/00
IRF7807/IRF7807A
Electrical Characteristics Para...
Description
8.3 A, 30 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET Chip-Set for DC-DC Converters 30V Single N-Channel HEXFET Power MOSFET in a SO-8 package